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Biomedical subjects

S Das Sarma

Publications and source records attributed to S Das Sarma.

At least 19 recordsLinked to original sources
PubMed2003

High temperature ferromagnetism with a giant magnetic moment in transparent co-doped SnO(2-delta).

The occurrence of room temperature ferromagnetism is demonstrated in pulsed laser deposited thin films of Sn(1-x)Co(x)O(2-delta) (x<0.3). Interestingly, films of Sn(0.95)Co(0.05)O(2-delta) grown on R-plane sapphire not only exhibit ferromagnetism with a Curie temperature close to 650 K, but also a giant magnetic moment of 7.5+/-0.5 micro(B)/Co, not yet reported in any diluted magnetic semiconductor system. The films are semiconducting and optically highly transparent.

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PubMed2003

Even-odd effect in spontaneously coherent bilayer quantum Hall droplets.

Using exact diagonalization in the disk geometry we predict a novel even-odd effect in the Coulomb-blockade spectra of vertically coupled double quantum dots under an external magnetic field. The even-odd effect in the tunneling conductance is a direct manifestation of spontaneous interlayer phase coherence, and is similar to the even-odd resonance in the Cooper pair box problem in mesoscopic superconducting grains. Coherent fluctuations in the number of Cooper pairs in superconductors are analogous to the fluctuations in the relative number difference between the two layers in quantum Hall droplets.

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PubMed2003

Frictional drag in dilute bilayer 2D hole systems.

We develop a theory for frictional drag between two 2D hole layers in a dilute bilayer GaAs hole system, including effects of hole-hole and hole-phonon interactions. Our calculations suggest significant enhancement of hole drag transresistivity over the corresponding electron drag results. This enhancement originates from the exchange induced renormalization of the single-layer compressibility and the strong dependence of single-layer conductivity on density. We also address the effect of hole-phonon interaction on the drag temperature dependence. Our calculated results are in reasonable quantitative agreement with recent experimental observations.

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PubMed2003

Disentangling the exchange coupling of entangled donors in the Si quantum computer architecture.

We develop a theory for micro-Raman scattering by single and coupled two-donor states in silicon. We find the Raman spectra to have significant dependence on the donor exchange splitting and the relative spatial positions of the two-donor sites. In particular, we establish a strong correlation between the temperature dependence of the Raman peak intensity and the interdonor exchange coupling. Micro-Raman scattering can therefore potentially become a powerful tool to measure interqubit coupling in the development of a Si quantum computer architecture.

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PubMed2003

Resistivity of dilute 2D electrons in an undoped GaAs heterostructure.

We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, 0.16 x 10(10) to 7.5 x 10(10) cm(-2), are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.

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PubMed2002

Layer-by-layer epitaxy in limited mobility nonequilibrium models of surface growth.

We study, using noise-reduction techniques, layer-by-layer epitaxial growth in limited mobility solid-on-solid nonequilibrium surface growth models, which have been introduced in the context of kinetic surface roughening in ideal molecular beam epitaxy. Multiple hit noise reduction and long surface diffusion length lead to qualitatively similar layer-by-layer epitaxy in (1+1)- and (2+1)-dimensional limited mobility growth simulations. We discuss the dynamic scaling characteristics connecting the transient layer-by-layer growth regime with the asymptotic kinetically rough growth regime.

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PubMed2002

Experimental persistence probability for fluctuating steps.

The persistence behavior for fluctuating steps on the Si(111)-(sqrt[3]xsqrt[3])R30 degrees -Al surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970 K. Using the standard persistence definition, the measured persistence probability displays power-law decay with an exponent of theta=0.77+/-0.03. This is consistent with the value of theta=3/4 predicted for attachment-detachment limited step kinetics. If the persistence analysis is carried out in terms of return to a fixed-reference position, the measured probability decays exponentially. Numerical studies of the Langevin equation used to model step motion corroborate the experimental observations.

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PubMed2002

Polaron percolation in diluted magnetic semiconductors.

We theoretically study the development of spontaneous magnetization in diluted magnetic semiconductors as arising from a percolation of bound magnetic polarons. Within the framework of a generalized percolation theory we derive analytic expressions for the Curie temperature and the magnetization in the limit of low carrier density, obtaining excellent quantitative agreement with Monte Carlo simulation results and good qualitative agreement with experimental results.

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PubMed2002

Universality class of discrete solid-on-solid limited mobility nonequilibrium growth models for kinetic surface roughening.

We investigate, using the noise reduction technique, the asymptotic universality class of the well-studied nonequilibrium limited mobility atomistic solid-on-solid surface growth models introduced by Wolf and Villain (WV) and Das Sarma and Tamborenea (DT) in the context of kinetic surface roughening in ideal molecular beam epitaxy. We find essentially all the earlier conclusions regarding the universality class of DT and WV models to be severely hampered by slow crossover and extremely long-lived transient effects. We identify the correct asymptotic universality class(es) that differs from earlier conclusions in several instances.

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PubMed2002

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions.

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.

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PubMed2001

Exchange in silicon-based quantum computer architecture.

The silicon-based quantum computer proposal has been one of the actively pursued ideas during the past three years. Here we calculate the donor electron exchange in silicon and germanium, and demonstrate an atomic-scale challenge for quantum computing in Si (and Ge), as the six (four) conduction-band minima in Si (Ge) lead to intervalley electronic interference, generating strong oscillations in the exchange splitting of two-donor two-electron states. Donor positioning with atomic-scale precision within the unit cell thus becomes a decisive factor in determining the strength of the exchange coupling-a fundamental ingredient for two-qubit operations in a silicon-based quantum computer.

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PubMed2001

Transition temperature of ferromagnetic semiconductors: a dynamical mean field study.

We formulate a theory of doped magnetic semiconductors such as Ga(1-x)Mn(x)As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T(c) as a function of magnetic coupling strength J, carrier density n, and Mn density x. We find that T(c) is determined by a subtle interplay between carrier density and magnetic coupling.

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PubMed2001

Disorder and interaction in 2D: exact diagonalization study of the Anderson-Hubbard-Mott model.

We investigate, by numerically calculating the charge stiffness, the effects of random diagonal disorder and electron-electron interaction on the nature of the ground state in the 2D Hubbard model through the finite-size exact diagonalization technique. By comparing with the corresponding 1D Hubbard model results and by using heuristic arguments we conclude that it is unlikely that there is a 2D metal-insulator quantum phase transition, although the effect of interaction in some range of parameters is to substantially enhance the noninteracting charge stiffness.

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PubMed2001

Bilayer coherent and quantum Hall phases: duality and quantum disorder.

We consider a fully spin-polarized quantum Hall system with no interlayer tunneling at total filling factor nu = 1/k (where k is an odd integer) using the Chern-Simons-Ginzburg-Landau theory. Exploiting particle-vortex duality and the concept of quantum disordering, we find a large number of possible compressible and incompressible ground states, some of which may have relevance to recent experiments of Spielman et al. [Phys. Rev. Lett. 84, 5808 (2000)]. We find interlayer coherent compressible states without Hall quantization and interlayer incoherent incompressible states with Hall quantization in addition to the usual (k,k,k) Halperin states, which are both interlayer coherent and incompressible.

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PubMed2001

Interplay between Zeeman coupling and swap action in spin-based quantum computer models: error correction in inhomogeneous magnetic fields.

We consider theoretically the interplay between Zeeman coupling and exchange-induced swap action in spin-based quantum dot quantum computer models in the presence of inhomogeneous magnetic fields, which are invariably present in real systems. We estimate quantitatively swap errors caused by the inhomogeneous field, establishing that error correction would, in principle, be possible in the presence of nonuniform magnetic fields in realistic structures.

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PubMed2000

Many-body renormalization of semiconductor quantum wire excitons: absorption, gain, binding, and unbinding.

We consider theoretically the formation and stability of quasi-one-dimensional many-body excitons in GaAs quantum wire structures under external photoexcitation conditions by solving the dynamically screened Bethe-Salpeter equation for realistic Coulomb interaction. In agreement with several recent experimental findings the calculated excitonic peak shows weak carrier-density dependence up to (and even above) the Mott transition density, nc approximately 3 x 10(5) cm(-1). Above nc we find considerable optical gain demonstrating compellingly the possibility of a one-dimensional quantum wire laser operation.

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PubMed1999

Sign-time distributions for interface growth.

We apply the recently introduced distribution of sign-times (DST) to nonequilibrium interface growth dynamics. We are able to treat within a unified picture the persistence properties of a large class of relaxational and noisy linear growth processes, and prove the existence of a nontrivial scaling relation. A critical dimension is found, relating to the persistence properties of these systems. We also illustrate, by means of numerical simulations, the different types of DST to be expected in both linear and nonlinear growth mechanisms.

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