Temperature dependence of hyperfine coupling of the anion antisite in III-V compounds.
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Biomedical subjects
M Lannoo
Publications and source records attributed to M Lannoo.
Theoretical approach to heterojunction valence-band discontinuities: Case of a common anion.
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Role of dangling bonds at Schottky barriers and semiconductor heterojunctions.
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Theory of the chemical shift at relaxed (110) surfaces of III-V semiconductor compounds.
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Erratum: Oxide traps in Si-SiO2 structures characterized by tunnel emission with deep-level transient spectroscopy
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Coupling between two dangling bonds in polycrystalline silicon.
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Theoretical approach for n-i-p-i silicon.
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Theoretical study of the electronic structure of the incoherent {211} Sigma =3 grain boundary in Ge by the recursion approach.
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Oxide traps in Si-SiO2 structures characterized by tunnel emission with deep-level transient spectroscopy.
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Optical cross sections associated with deep-level impurities in semiconductors.
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Reply to "Comment on 'Green's-function calculation of the lattice response near the vacancy in Si'."
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Tight-binding calculation of the band offset at the Ge-GaAs (110) interface using a local charge-neutrality condition.
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Calculation of the Kohn-Sham potential and its discontinuity for a model-semiconductor.
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Nature of covalent bonding of self-interstitials in silicon.
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