Tight-binding prediction of tetrahedral semiconductor ionization potentials.
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Biomedical subjects
M Lannoo
Publications and source records attributed to M Lannoo.
Calculation of the band gap for small CdS and ZnS crystallites.
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New theoretical approach of transition-metal impurities in semiconductors.
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Self-consistent band-edge deformation potentials in a tight-binding framework.
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Theoretical calculation of band-edge discontinuities near a strained heterojunction: Application to (In,Ga)As/GaAs.
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Theoretical Mössbauer isomer shift of antimony chalcogenides.
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Transition-metal impurities in semiconductors and heterojunction band lineups.
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EL2 and the electronic structure of the AsGa-Asi pair in GaAs: The role of lattice distortion in the properties of the normal state.
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Atomic configuration and electronic properties of the metastable state of the EL2 center in GaAs.
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Transition-metal impurities in semiconductors and heterojunction band lineups.
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Band-edge deformation potentials in a tight-binding framework.
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Deviation from the classical 4:2 coordination in very thin SiO2 films grown on silicon.
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Electronic-structure and local-order study of GexSe
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Asymptotic behavior of relaxation and reconstruction near crystalline surfaces.
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Metastable state of EL2 in GaAs.
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Unexplored properties of defects with triply degenerate gap states in semiconductors: The role of lattice distortion.
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Empirical laws and their theoretical justification for the crystal-field splitting and ionization energy of transition-metal ions in semiconductors.
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Electronic properties of antimony chalcogenides.
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