Search PubMed⌕ Search

SEARCH · Search PubMed

Results for “Transistors, Electronic”

Search indexed PubMed citations on genomics, clinical trials, systematic reviews and public health. Explore titles, authors and supplied subject terms, then open the PubMed record.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 recordsLinked to original sources
PubMed1997

Scanning Single-Electron Transistor Microscopy: Imaging Individual Charges

A single-electron transistor scanning electrometer (SETSE)-a scanned probe microscope capable of mapping static electric fields and charges with 100-nanometer spatial resolution and a charge sensitivity of a small fraction of an electron-has been developed. The active sensing element of the SETSE, a single-electron transistor fabricated at the end of a sharp glass tip, is scanned in close proximity across the sample surface. Images of the surface electric fields of a GaAs/AlxGa1-xAs heterostructure sample show individual photo-ionized charge sites and fluctuations in the dopant and surface-charge distribution on a length scale of 100 nanometers. The SETSE has been used to image and measure depleted regions, local capacitance, band bending, and contact potentials at submicrometer length scales on the surface of this semiconductor sample.

Journal Article↗
PubMed1998

The radio-frequency single-electron transistor (RF-SET): A fast and ultrasensitive electrometer

A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic "dual" of the well-known radio-frequency superconducting quantum interference device. The device is more than two orders of magnitude faster than previous single-electron devices, with a constant gain from dc to greater than 100 megahertz. For a still-unoptimized device, a charge sensitivity of 1.2 x 10(-5) e/hertz was obtained at a frequency of 1.1 megahertz, which is about an order of magnitude better than a typical, 1/f-noise-limited SET, and corresponds to an energy sensitivity (in joules per hertz) of about 41 Planck's over 2pi.

Journal Article↗
PubMed1997

A Silicon Single-Electron Transistor Memory Operating at Room Temperature

A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate. Storing one electron on the floating gate screens the entire channel from the potential on the control gate and leads to (i) a discrete shift in the threshold voltage, (ii) a staircase relation between the charging voltage and the shift, and (iii) a self-limiting charging process. The structure and fabrication of the memory should be compatible with future ultralarge-scale integrated circuits.

Journal Article↗
PubMed2000

A single-photon detector in the far-infrared range

The far-infrared region (wavelengths in the range 10 microm-1 mm) is one of the richest areas of spectroscopic research, encompassing the rotational spectra of molecules and vibrational spectra of solids, liquids and gases. But studies in this spectral region are hampered by the absence of sensitive detectors--despite recent efforts to improve superconducting bolometers, attainable sensitivities are currently far below the level of single-photon detection. This is in marked contrast to the visible and near-infrared regions (wavelengths shorter than about 1.5 microm), in which single-photon counting is possible using photomultiplier tubes. Here we report the detection of single far-infrared photons in the wavelength range 175-210 microm (6.0-7.1 meV), using a single-electron transistor consisting of a semiconductor quantum dot in high magnetic field. We detect, with a time resolution of a millisecond, an incident flux of 0.1 photons per second on an effective detector area of 0.1 mm2--a sensitivity that exceeds previously reported values by a factor of more than 10(4). The sensitivity is a consequence of the unconventional detection mechanism, in which one absorbed photon leads to a current of 10(6)-10(12) electrons through the quantum dot. By contrast, mechanisms of conventional detectors or photon assisted tunnelling in single-electron transistors produce only a few electrons per incident photon.

Journal Article↗