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PubMed1996

Determination of germanium by AAS in chloride-containing matrices.

Interference effects of NaCl on the ET-AAS determination of Ge have been studied. The use of several matrix modifiers to alleviate this problem such as Ni and Zn perchlorates and nitrates, nitric acid, ammonium nitrate are reported. The stabilizing effect of Zn and Ni perchlorates allows the use of high pretreatment temperatures. NaCl is thus thermally volatilized from the atomizer by employing pretreatment temperatures higher than 1500 degrees C resulting in an improved sensitivity. Germanium levels in zinc plant slag samples, have been determined and compared to those obtained for the same samples spiked with NaCl with platform and wall atomization using nickel perchlorate as a matrix modifier. The results were compared with those from a hydride generation system equipped with a liquid nitrogen trap. The recoveries for germanium have been almost complete and amount to 99% for the original slag samples and 80% for 15% (w/w) NaCl containing spiked samples.

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PubMed2004

The application of FIB milling for specimen preparation from crystalline germanium.

The effectiveness of focused ion beam (FIB) for preparation of crystalline germanium specimens has been studied. FIB milling results in strong cellular relief of the germanium surfaces on bulk specimens. This cellular relief, associated with the generation of high densities of point defects during interaction of the specimen with the high-energy gallium beam, can be reduced by using either a lower ion beam currents or a lower beam energy. Even under these milling conditions the cellular relief is, however, still evident on the surface of the TEM specimens as evidenced by so-called 'curtaining' relief. Nevertheless good quality specimens for both conventional and high-resolution imaging may be prepared using FIB milling if low currents are employed for final milling.

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PubMed2003

Inelastic electron scattering observation using energy filtered transmission electron microscopy for silicon -- germanium nanostructures imaging.

This paper presents a new technique using energy filtered TEM (EFTEM) for inelastic electron scattering contrast imaging of Germanium distribution in Si-SiGe nanostructures. Comparing electron energy loss spectra (EELS) obtained in both SiGe and Si single crystals, we found a spectrum area strongly sensitive to the presence of Ge in the range [50-100 eV]. In this energy loss window, EELS spectrum shows a smooth steeply shaped background strongly depending on Ge concentration. Germanium mapping inside SiGe can thus be performed through imaging of the EELS background slope variation, obtained by processing the ratio of two energy filtered TEM images, respectively, acquired at 90 and 60 eV. This technique gives contrasted images strongly similar to those obtained using STEM Z-contrast, but presenting some advantages: elastic interaction (diffraction) is eliminated, and contrast is insensitive to polycrystalline grains orientation or specimen thickness. Moreover, since the extracted signal is a spectral signature (inelastic energy loss) we demonstrate that it can be used for observation and quantification of Ge concentration depth profile of SiGe buried layers.

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PubMed2004

Divalent germanium compound with a radical-anionic ligand: molecular structures of (dpp-BIAN)*- GeCl and its hydrochloration products [(dpp-BIAN)(H)2]*+ [GeCl3]- and [[(dpp-BIAN)(H)2*+]2(Cl-)]+ [GeCl3]- (dpp-BIAN=1,2-Bis[(2,6-diisopropylphenyl)imino]acenaphthene).

The germanium(II) compound (dpp-BIAN)GeCl (1), which contains the radical anion of dpp-BIAN can be prepared either by reacting free dpp-BIAN ligand with 2 equiv of GeCl2(1,4-dioxane) in Et2O or by metathetical reaction of the sodium salt of dpp-BIAN with germanium dichloride in Et2O or benzene. The reaction of benzene solutions of 1 with 2 or 3 equiv of HCl led to protonation of the dpp-BIAN ligand affording [(dpp-BIAN)(H)2]*+[GeCl3]- (2) and [[(dpp-BIAN)(H)2*+]2(Cl-)]+ [GeCl3]- (3), which incorporate the radical cation of the protonated ligand. Compounds 1-3 have been characterized by elemental analysis, IR, UV-vis, and electron spin resonance (ESR) spectroscopy. Molecular structures of 1-3 were determined by single-crystal X-ray diffraction. In molecule 1, the Ge atom is positioned at the apex of the slightly distorted trigonal pyramid. The Ge-N bond lengths in 1 are 2.0058(19) and 2.004(2) A. The molecular structure of 2 consists of contact ions [(dpp-BIAN)(H)2]+ and [GeCl3]-. In the molecular structure of 3, two radical cations of [(dpp-BIAN)(H)2]+ are "coordinated" by the chlorine anion. The ESR signal of 1 indicates the presence of a dpp-BIAN radical anion and shows a hyperfine structure due to the coupling of an unpaired electron to 14N, 73Ge, 35Cl, 37Cl, and 1H nuclei (AN=0.48 (2 N), AGe=0.96, ACl=0.78 (35Cl), ACl=0.65 (37Cl), AH=0.11 (4 H) mT, g=2.0014). Both 2 and 3 reveal ESR signals of radical cation [(dpp-BIAN)(H)2]*+ (septet, AN=0.53, AH=0.48 mT, g=2.0031).

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PubMed2006

Density functional theory study of 10-atom germanium clusters: effect of electron count on cluster geometry.

Density functional theory (DFT) at the hybrid B3LYP level has been applied to Ge10z germanium clusters (z = -6, -4, -2, 0, +2, +4, +6) starting from 12 different initial configurations. The D4d 4,4-bicapped square antiprism found experimentally in B10H102- and other 10-vertex clusters with 22 skeletal electrons is calculated for the isoelectronic Ge102- to be the global minimum by more than 15 kcal/mol. The global minima found for electron-rich clusters Ge104- and Ge106- are not those known experimentally. However, experimentally known structures for nido-B10H14 and the pentagonal antiprism of arachno-Pd@Bi104+ are found at higher but potentially accessible energies for Ge104- and Ge106-. The global minimum for Ge10 is the C3v 3,4,4,4-tetracapped trigonal prism predicted by the Wade-Mingos rules and found experimentally in isoelectronic Ni@Ga1010-. However, only slightly above this global minimum for Ge10 (+3.3 kcal/mol) is the likewise C3v isocloso 10-vertex deltahedron found in metallaboranes such as (eta6-arene)RuB9H9 derivatives. Structures found for more electron-poor clusters Ge102+ and Ge104+ include various capped octahedra and pentagonal bipyramids. This study predicts a number of 10-vertex cluster structures that have not yet been realized experimentally but would be interesting targets for future synthetic 10-vertex cluster chemistry using vertex units isolobal with the germanium vertices used in this work.

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PubMed2000

Time-resolved electron spin resonance of gallium and germanium porphyrins in the excited triplet state.

Gallium and germanium porphyrin complexes in the lowest excited triplet (T1) state have been studied by time-resolved electron spin resonance (TRESR). It is found that for Ge(TPP)(OH)2 (TPP = dianion of tetraphenylporphyrin) intersystem crossing (ISC) from the lowest excited singlet (S1) state to the T1x and T1y sublevels is faster than that to the T1z sublevel (T1x, T1y, and T1z are sublevels of the T1 state), while the ISC of ZnTPP and Ga(TPP)(OH) is selective to the T1z sublevel. This is interpreted by a weak interaction between the dpi orbital of germanium and LUMO (eg) of the porphyrin ligand, resulting in small spin-orbit coupling (SOC). The interpretation is supported by molecular orbital calculations. The ISC of Ge(OEP)(OH)2 (OEP = dianion of octaethylporphyrin) and Ge(Pc)(OH)2 (Pc = dianion of tetra-tert-butylphthalocyanine) is found to be selective to the T1z sublevel in contrast to Ge(TPP)(OH)2. This dependence on the porphyrin ligand is reasonably explained by a difference between the 3(a(1u)eg) (the OEP and Pc complexes) and 3(a(2u)eg) (the TPP complex) configurations. This is the first observation of a difference in selective ISC between the 3(a(1u)eg) and 3(a(2u)eg) configurations. The TRESR spectrum of Ge(TPP)Br2 is different from those of Ge(TPP)Cl2 and Ge(TPP)(OH)2, and is interpreted by SOC between the T1 and T2 states. From ESR parameters the square of the coefficient of the eg orbital on bromine is evaluated as 0.018 in the T1 state.

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PubMed2000

A new germanium-based linker for solid phase synthesis of aromatics: synthesis of a pyrazole library

An efficient synthesis of chlorogermane linker 12 is described. Economic introduction of germanium into this linker is accomplished by insertion of dichlorogermylene [from germanium(IV) chloride] into the homobenzylic C-Cl bond of 4-(2-chloroethyl)phenol 1. Using linker 12, transmetalation with lithiated 4-acetophenone, 3-acetophenone, and 4-(4'methoxy)biphenyl followed by Mitsunobu-type coupling to Argogel gives functionalized resins 14, 16, and 18, respectively. Treatment of resin 18 with TFA, ICl, Br2, or NCS effects clean ipso-degermylation releasing biphenyls 19-22, respectively. Resins 14 and 16 are employed for the parallel synthesis of a library of pyrazoles by enaminone formation (using Bredereck's reagent), condensative ring-closure (using a series of monosubstituted hydrazines), and cleavage (using TFA and Br2). Analysis of this library reveals the influence of the hydrazine substituent on both the regioselectivity of ring-closure and the propensity for electrophilic substitution at the 4-position of the pyrazoles during ipso-degermylative cleavage.

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PubMed2005

Photochemical generation of electrons and holes in germanium-containing ITQ-17 zeolite.

Laser flash photolysis of germanium-containing ITQ-17 zeolite (Ge/ITQ-17, a single polymorph of beta zeolite) at 266 nm generates a transient spectrum decaying in the sub-millisecond time scale that is compatible with the formation of two transient species. The shorter lived transient (tau approximately 45 micros under nitrogen) has been assigned to trapped electrons due to the characteristic spectroscopic absorption (single band at 480 nm) and its quenching by typical electron scavengers such as N(2)O and CH(2)Cl(2). The second longer lived transient (lambda(max) = 500, 540, and 600 nm; tau approximately 390 micros) is not quenched by O(2) or electron scavengers, but it is quenched by methanol as hole scavenger and has been assigned to positive holes. Also there is a remarkable similarity of the transient spectrum of the Ge/ITQ-17 with the optical spectrum reported previously for electron-hole pairs in ZSM-5 zeolite. Under the same irradiation conditions, photoejection of electrons and photogeneration of positive holes has not been observed for conventional aluminosilicate zeolites, all-silica zeolites, or GeO(2)-impregnated zeolites. Therefore this photochemical behavior has been ascribed to the presence of framework germanium atoms opening the way for photoresponsive zeolites. The ability of Ge/ITQ-17 to generate photochemically electrons and holes has been confirmed by adsorbing naphthalene and propyl viologen sulfonate as electron donor and acceptor, respectively, and observing the generation of the corresponding radical ions.

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PubMed2005

Thorium encapsulated caged clusters of germanium: Th@Ge(n), n = 16, 18, and 20.

We report from ab initio calculations that thorium encapsulation can be used to stabilize highly symmetric cages of germanium with 16 and 20 atoms. The lowest energy structures of these clusters are different from the recently found silicon fullerenes and are similar to clusters found in bulk metallic alloys. The binding energies of these clusters are higher compared with the values for the elemental germanium clusters of comparable sizes, and this suggests a strong possibility of their experimental realization in large quantities. Also, Th@Ge(16) has a large highest occupied-lowest unoccupied molecular orbital (HOMO-LUMO) gap of 1.72 eV that makes it interesting for optoelectronic applications.

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PubMed2006

Three-stage multilayer formation kinetics during adsorption of an anionic fluorinated surfactant onto germanium. 1. Concentration effect.

The adsorption of tetraethylammonium perfluorooctylsulfonate (TEA-FOS) from aqueous solution onto hydroxylated germanium is studied using in situ polarized attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The adsorption is monitored at a series of bulk solution concentrations spanning from well below to above the critical micelle concentration (CMC; 1.0 mM). The kinetics of adsorption is followed by monitoring the intensity of the fluorocarbon bands. The orientation of the fluorocarbon director with respect to the germanium surface is determined by circular dichroism measurements of CF2 stretching bands. At bulk concentrations ranging from 10% of the CMC to at least 500% of the CMC, the adsorption occurs in an unusual sequence of three stages. Initially, rapid adsorption occurs within 200 min, leading to coverage of a monolayer or less. A long period of slow adsorption follows, during which we hypothesize that surfactant molecules form clusters, some of which serve as nuclei for multilayer growth. This stage concludes suddenly with an acceleration in the rate of adsorption, which eventually leads to multilayer formation. Because this is an anionic surfactant adsorbing onto a negatively charged surface at pH 6, the tetraethylammonium ions must mediate the interactions between the surfactant headgroups and the surface. The dichroism measurements show that TEA-FOS is initially oriented randomly or somewhat parallel to the surface, but over time adopts an orientation somewhat normal to the surface. This behavior is consistent with initial adsorption at isolated sites, followed by aggregation into isotropic admicelles, and finally growth into flattened admicelles. The sudden onset of accelerated adsorption can be explained either by autoaccelerating adsorption or nucleation and growth of a hydrophobic multilayer structure.

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PubMed2006

High density germanium nanowire assemblies: contact challenges and electrical characterization.

The conductive properties of vertically aligned germanium nanowires, with mean diameters of 50 and 100 nm, within anodized aluminum oxide (AAO) templates have been characterized by conductive atomic force microscopy (C-AFM) and macrocontact measurements. C-AFM was used to determine the electrical transport properties of individual nanowires within the arrays, while macrocontacts were used to measure the mean current-voltage characteristics of groups of nanowires. Contact resistance between the nanowires and metal macrocontacts was minimized by polishing and gradual etching of the AAO surface, to expose the nanowires, prior to deposition of the contacts. Impedance measurements were used to analyze the importance of defects on the charge transport properties of the germanium nanowire arrays. Conductivity data from C-AFM and macrocontact measurements were found to be comparable suggesting that both methods are inherently suitable for evaluating the electrical transport properties of encapsulated nanowires within a matrix. These results are significant as the ability to make good ohmic contacts to nanowires, within well-defined arrays, is key for the future "bottom-up" fabrication of multilayered device architectures for future electronic and optoelectronic devices.

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PubMed2006

Geometries and electronic properties of the tungsten-doped germanium clusters: WGen (n = 1-17).

Geometries associated with relative stabilities, energy gaps, and polarities of W-doped germanium clusters have been investigated systematically by using density functional theory. The threshold size for the endohedral coordination and the critical size of W-encapsulated Gen structures emerge as, respectively, n = 8 and n = 12, while the fullerene-like W@Ge(n) clusters appears at n = 14. The evaluated relative stabilities in term of the calculated fragmentation energies reveal that the fullerene-like W@Ge(14) and W@Ge(16) structures as well as the hexagonal prism WGe(12) have enhanced stabilities over their neighboring clusters. Furthermore, the calculated polarities of the W@Ge(n) reveal that the bicapped tetragonal antiprism WGe(10) is a polar molecule while the hexagonal prism WGe(12) is a nonpolar molecule. Moreover, the recorded natural populations show that the charges transfer from the germanium framework to the W atom. Additionally, the WGe(12) cluster with large highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap, large fragmentation energy, and large binding energy is supposed to be suitable as a building block of assembly cluster material. It should be pointed out that the remarkable features of W@Ge(n) clusters above are distinctly different from those of transition metal (TM) doped Ge(n) (TM = Cu and Ni) clusters, indicating that the growth pattern of the TMGe(n) depends on the kind of doped TM impurity.

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PubMed2003

Methyl radical also reacts by the frontside mechanism: an ab initio study of some homolytic substitution reactions of methyl radical at silicon, germanium and tin.

Ab initio calculations using 6-311G**, cc-pVDZ, aug-cc-pVDZ, and a (valence) double-zeta pseudopotential (DZP) basis sets, with (MP2, QCISD, CCSD(T)) and without (UHF) the inclusion of electron correlation, and density functional (B3LYO) calculations predict that homolytic substitution reactions of the methyl radical at the silicon atom in disilane can proceed via both backside and frontside attack mechanisms. At the highest level of theory (CCSD(T)/aug-cc-pVDZ//MP2/aug-cc-pVDZ), energy barriers (delta E) of 47.4 and 48.6 kJ mol-1 are calculated for the backside and frontside reactions respectively. Similar results are obtained for reactions involving germanium and tin with energy barriers (delta E) of between 46.5 and 67.3, and 41.0 and 73.3 kJ mol-1 for the backside and frontside mechanisms, respectively. These data suggest that homolytic substitution reactions of methyl radical at silicon, germanium, and tin can proceed via either homolytic substitution mechanism.

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PubMed2003

An ab-initio study of some homolytic substitution reactions of acyl radicals at silicon, germanium and tint.

Ab initio calculations using the 6-311G**, cc-pVDZ, and (valence) double-zeta pseudopotential (DZP) basis sets, with (MP2, QCISD, CCSD(T)) and without (UHF) the inclusion of electron correlation, and density functional (BHandHLYP, B3LYP) calculations predict that homolytic substitution reactions of acetyl radicals at the silicon atoms in disilane can proceed via both backside and frontside attack mechanisms. At the highest level of theory (CCSD(T)/cc-pVDZ//MP2/cc-pVDZ), energy barriers (deltaE double dagger) of 77.2 and 81.9 kJ mol(-1) are calculated for the backside and frontside reactions respectively. Similar results are obtained for reactions involving germanium and tin with energy barriers (deltaE double dagger) of 53.7-84.2, and 55.0-89.7 kJ mol(-1) for the backside and frontside mechanisms, respectively. These data suggest that both homolytic substitution mechanisms are feasible for homolytic substitution reactions of acetyl radicals at silicon, germanium, and tin. BHandHLYP calculations provide geometries and energy barriers for backside and frontside transition states in good agreement with those obtained by traditional ab initio techniques.

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PubMed2004

An enormous vibrational motion: the gas-phase structure of dimethyl-bis(methoxyethynyl) germanium.

The structure of dimethyl-bis(methoxyethynyl) germanium has been determined in the gas phase by electron diffraction utilising flexible restraints from quantum chemical calculations. Theoretical methods (B3LYP/6-311+G* and MP2/6-311+G*) predict a low barrier to rotation of the methoxy groups in the molecule in addition to low-frequency vibrations of the long ethynyl chains. In the equilibrium structure the Ge-C[triple bond]C angles of the two methoxyethynyl fragments in the molecule are computed to deviate by up to 4 degrees from the linear arrangement. As a consequence of low-frequency large-amplitude vibrational motion the experimental structure of these fragments without applying vibrational corrections deviates considerably from linearity, while the structure corrected for vibrational effects using the harmonic approximation and taking into account a non-linear transformation between internal and Cartesian coordinates (r(h1)) shows closer agreement with theory. The main experimental structural parameters of dimethyl-bis(methoxyethynyl) germanium (r(h1)) are: r(Ge-C)(mean), 192.5(1) pm; DeltaGeC =r(Ge-C(methyl))-r(Ge-C(ethynyl)), 4.5(5) pm, r(C[triple bond]C)(mean), 122.8(2) pm; r(C-O)(mean), 138.9(3) pm; DeltaCO =r(C(methyl)-O)-r(C(ethynyl)-O), 14.5(2) pm, r(C-H)(mean), 109.1(4) pm; [angle](X-C-H)(mean)(X = Ge,O), 109(1) degree; [angle]C(ethynyl)-Ge-C(ethynyl), 108.1(4) degree; [angle]C(methyl)-Ge-C(methyl), 113.4(5) degree; [angle]Ge-C[triple bond]C, 163(1) degree; [angle]C[triple bond]C-O, 176(2) degree; [angle]C-O-C, 115.2(6) degree; methoxy group torsion, tau, 36(9) degree from the position in which the C-O bond eclipses the further Ge-C(ethynyl) bond.

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PubMed2006

Synthetic, structural and theoretical studies of amidinate and guanidinate stabilised germanium(I) dimers.

The neutral germanium(i) dimers, [{Ge(Piso)}(2)] and [{Ge(Giso)}(2)], Piso = [(ArN)(2)CBu(t)](-), Giso = [(ArN)(2)CNPr(i)(2)](-), Ar = C(6)H(3)Pr(i)(2)-2,6, which are stabilised by bulky amidinate and guanidinate ligands respectively, have been prepared by reduction of the corresponding germanium(ii) chlorides, [Ge(Piso)Cl] and [Ge(Giso)Cl]; theoretical studies suggest that the Ge-Ge bonds of [{Ge(Piso)}(2)] and [{Ge(Giso)}(2)] are associated with their HOMOs, whilst their LUMOs have substantial Ge-Ge pi-bonding character.

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PubMed2006

Density functional theory study of twelve-atom germanium clusters: conflict between the Wade-Mingos rules and optimum vertex degrees.

Density functional theory (DFT) at the hybrid B3LYP level has been applied to Ge(12)(z) bare germanium clusters (z = -6, -4, -2, 0, +2, +4, +6) starting from 11 initial configurations. The Wade-Mingos rules are seen to have limited value in rationalizing the results since they frequently require vertex degrees higher than the optimum vertex degree of 4 for germanium. Thus the expected I(h) regular icosahedron is no longer the global minimum for Ge(12)(2-) although it remains a low energy structure for Ge(12)(2-) lying only 5.6 kcal mol(-1) above a bicapped arachno structure conforming to the Wade-Mingos rules. The three lowest energy structures for Ge(12)(4-) within 11 kcal mol(-1) are a prolate (elongated) polyhedron with six quadrilateral faces and eight triangular faces, the dual of the bisdisphenoid with four trapezoidal and four pentagonal faces, and a polyhedron with two quadrilateral and 16 triangular faces related but not identical to the polyhedron found in the known tetracarbon carboranes R(4)C(4)B(8)H(8). The lowest energy structures for the neutral Ge(12) are seen to be distorted versions of the icosahedron and the bicapped 10-vertex arachno lowest energy structures for Ge(12)(2-). The low energy structures for the even more hypoelectronic Ge(12)(2+) and Ge(12)(4+) are even more unusual including a hexacapped octahedron, a tetracapped square antiprism, and a double cube for Ge(12)(2+) and a C(2v) structure with a central unique degree 6 vertex for Ge(12)(4+).

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