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PubMed2003

FTIR spectroscopic studies of the stabilities and reactivities of hydrogen-terminated surfaces of silicon nanowires.

Attenuated total reflection Fourier transform infrared (FTIR) spectroscopy was used to characterize the surface species on oxide-free silicon nanowires (SiNWs) after etching with aqueous HF solution. The HF-etched SiNW surfaces were found to be hydrogen-terminated; in particular, three types of silicon hydride species, the monohydride (SiH), the dihydride (SiH(2)), and the trihydride (SiH(3)), had been observed. The thermal stability of the hydrogen-passivated surfaces of SiNWs was investigated by measuring the FTIR spectra after annealing at different elevated temperatures. It was found that hydrogen desorption of the trihydrides occurred at approximately 550 K, and that of the dihydrides occurred at approximately 650 K. At or above 750 K, all silicon hydride species began to desorb from the surfaces of the SiNWs. At around 850 K, the SiNW surfaces were free of silicon hydride species. The stabilities and reactivities of HF-etched SiNWs in air and water were also studied. The hydrogen-passivated surfaces of SiNWs showed good stability in air (under ambient conditions) but relatively poor stability in water. The stabilities and reactivities of the SiNWs are also compared with those of silicon wafers.

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PubMed2001

Exciton-mediated hydrosilylation on photoluminescent nanocrystalline silicon.

A novel white light-promoted reaction using photoluminescent nanocrystalline silicon enables the hydrosilylation of alkenes and alkynes, providing stabilization of the porous silicon without significant loss of the photoemissive qualities of the material. Photopatterning and lithographic fabrication of isolated porous silicon structures are made possible. Experiments and observations are presented which indicate that the light promoted hydrosilylation reaction is unique to photoluminescent silicon, and does not function on nonemissive material. Hydrosilylation using a reactive center generated from a surface-localized exciton is proposed based upon experimental evidence, explaining the photoluminescence requirement. Indirect excitons formed by light absorption mediate the formation of localized electrophilic surface states which are attacked by incoming alkene or alkyne nucleophiles. Supra-band gap charge carriers have sufficient energy to react with nucleophilic alkenes and alkynes, thereupon causing Si-C bond formation, an irreversible event. The light-promoted hydrosilylation reaction is quenched by reagents that quench the light emission from porous silicon, via both charge transfer and energy transfer pathways.

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PubMed2005

Mechanism of the hydrosilylation reaction of alkenes at porous silicon: experimental and computational deuterium labeling studies.

The mechanism of the formation of Si-C bonded monolayers on silicon by reaction of 1-alkenes with hydrogen-terminated porous silicon surfaces has been studied by both experimental and computational means. We propose that monolayer formation occurs via the same radical chain process as at single-crystal surfaces: a silyl radical attacks the 1-alkene to form both the Si-C bond and a radical center on the beta-carbon atom. This carbon radical may then abstract a hydrogen atom from a neighboring Si-H bond to propagate the chain. Highly deuterated porous silicon and FTIR spectroscopy were used to provide evidence for this mechanism by identifying the IR bands associated with the C-D bond formed in the proposed propagation step. Deuterated porous silicon surfaces formed by galvanostatic etching in 48% DF/D2O:EtOD (1:1) electrolytes showed a 30% greater density of Si-D sites on the surface than Si-H sites on hydrogen-terminated porous silicon surfaces prepared in the equivalent H-electrolyte. The thermal reaction of undec-1-ene and the Lewis acid catalyzed reaction of styrene on a deuterated surface both resulted in alkylated surfaces with the same C-C and C-H vibrational features as formed in the corresponding reactions at a hydrogen-terminated surface. However, a broad band around 2100 cm(-1) was observed upon alkylating the deuterated surfaces. Ab initio and density functional theory calculations on small molecule models showed that the integrated absorbance of this band was comparable to the intensity expected for the C-D stretches predicted by the chain mechanism. The calculations also indicate that there is substantial interaction between the hydrogen atoms on the beta-carbons and the hydrogen atoms on the Si(111)-H surface. These broad 2100 cm(-1) features are therefore assigned to C-D bands arising from the involvement of surface D atoms in the hydrosilylation reactions, while the line broadening can be explained partly by interaction with neighboring surface atoms/groups.

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PubMed2006

Optical analysis of the light emission from porous silicon: a hybrid polyatom surface-coupled fluorophor.

The most extensive data set yet generated correlating photoluminescence excitation (PLE) and photoluminescence (PL) spectra is presented for aged (equilibrated) porous silicon (PS) samples. The observed features, which are temperature independent over the range 10-300 K, show a detailed correlation with the results of photoacoustic spectroscopy (PAS) and with molecular electronic structure calculations. The observed energy level patterns are reproduced in the photoabsorption (PA) of PS films released after the etching of a silicon wafer. It is concluded that the energy level pattern found for the photoluminescing surface of PS results from a structure which is neither uniquely molecule- or bulk-like but represents a hybrid form for which the density of states associated with a polyatomic vibrationally excited surface-bound fluorophor dominates the nature of the observed features which are not those of a semiconductor. These fluorophor features are broadened and shifted to lower excitation energy as a result of the intimate presence of the silicon surface to which the fluorophor is bound. The dominance of the surface-bound fluorophor accounts for the temperature-independent PLE and PL features. The observed spectral features are thus suggested to be the result of a strong synergistic interaction in which the silicon surface influences the location of surface-bound fluorophor excited states whereas the nature of the vibrationally excited surface-bound fluorophor coupling to the silicon surface provides the mechanism for an enhanced vibronic structure dominated interaction and energy transfer. The observed PLE, PL, PAS, and PA measurements are found to be consistent with previous photovoltaic and photoconductivity measurements, correlating well with a surface-bound oxyhydride-like emitter. This study suggests the important role that the overtone structure of a molecule bound to a surface can play as one forms a hybrid system.

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PubMed2006

Reactive species generated during wet chemical etching of silicon in HF/HNO3 mixtures.

The role of intermediate species generated during wet chemical etching of silicon in a HF-rich HF/HNO3 mixture was studied by spectroscopic and analytical methods at 1 degrees C. The intermediate N2O3 was identified by its cobalt blue color and the characteristic features in its UV-vis and Raman spectra. Furthermore, a complex N(III) species (3NO+.NO3-) denoted as [N4O6(2+)] is observed in these solutions. The time-dependent decay of the N(III) intermediates, mainly by their oxidation at the liquid-air interface, serves as a precondition for the study of the etch rate as function of the intermediate concentration measured by Raman spectroscopy. From a linear relationship between etch rate and [N4O6(2+)] concentration, NO+ is considered to be a reactive species in the rate-limiting step. This step is attributed to the oxidation of permanent existing Si-H bonds at the silicon surface by the reactive NO+ species. N2O3 serves as a reservoir for the generation of NO+ leading to a complete coverage of the silicon surface with reactive species at high intermediate concentrations. As long as this condition is valid (plateau region), the etch rate is constant and yields a smooth silicon surface upon completion of the etching. If the N2O3 concentration is insufficient to ensure a coverage of the Si surface by NO+, the etch rate decreases linearly with the N2O3 concentration and results in a roughening of the etched silicon surface (slope region).

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PubMed2006

Fabrication of highly antireflective silicon surfaces with superhydrophobicity.

Highly antireflective porous silicon surfaces with superhydrophobicity were obtained by means of chemical etching and fluoroalkylsilane self-assembly. The results show that wettability and reflectivity of these surfaces strongly depend on the etching method and the resultant surface morphology. All of the four resultant porous silicon surfaces by alkaline etching, acidic etching, thick Pt-assisted acidic etching, and thin Pt-assisted acidic etching can reduce reflectance, but the efficiency differs greatly. Except for the alkaline etching, the porous silicon surfaces produced by the other three etching methods can reach superhydrophobicity after fluoroalkylsilane modification. These differences are due to the different surface morphology and roughness. Moreover, the porous silicon surface produced by thin Pt-assisted acidic etching presents abundant holes and particles with diameters ranging from nanometers to submicrometers. This morphology enables the porous silicon surface to own a very low reflectance value that is averaged to be about 3% over the whole experimental photon wavelength spanning 300-800 nm.

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PubMed2006

New route for stabilizing silicon fullerenes.

Motivated by the recent synthesis of silica-coated silicon nanotubes, we here present the structural models of their counterparts, silica-coated silicon fullerenes, which can be considered as arising from a structurally stable building block, Si3O2. By performing density functional theory calculations we show that the silica-coated silicon fullerenes possess high energetic and thermal stabilities and point group symmetries as well as large energy gaps. The present results indicate that coating silica on silicon clusters would be a new way for stabilizing silicon fullerenes, which is expected to find potential allocations in nanotechnology.

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PubMed2006

Cleaning and hydrophilization of atomic force microscopy silicon probes.

The silicon surface of commercial atomic force microscopy (AFM) probes loses its hydrophilicity by adsorption of airborne and package-released hydrophobic organic contaminants. Cleaning of the probes by acid piranha solution or discharge plasma removes the contaminants and renders very hydrophilic probe surfaces. Time-of-flight secondary-ion mass spectroscopy and X-ray photoelectron spectroscopy investigations showed that the native silicon oxide films on the AFM probe surfaces are completely covered by organic contaminants for the as-received AFM probes, while the cleaning methods effectively remove much of the hydrocarbons and silicon oils to reveal the underlying oxidized silicon of the probes. Cleaning procedures drastically affect the results of adhesive force measurements in water and air. Thus, cleaning of silicon surfaces of the AFM probe and sample cancelled the adhesive force in deionized water. The significant adhesive force values observed before cleaning can be attributed to formation of a bridge of hydrophobic material at the AFM tip-sample contact in water. On the other hand, cleaning of the AFM tip and sample surfaces results in a significant increase of the adhesive force in air. The presence of water soluble contaminants at the tip-sample contact lowers the capillary pressure in the water bridge formed by capillary condensation at the AFM tip-sample contact, and this consequently lowers the adhesive force.

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PubMed2006

High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces.

High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si(+), Si(2+), Si(3+), and Si(4+) were detected on the Cl-terminated surface, with the highest oxidation state (Si(4+)) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p(3/2) peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monoleyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH(3)-, C(2)H(5)-, or C(6)H(5)CH(2)-terminated Si surfaces displayed <0.4 ML of surface oxide, and in most cases only displayed approximately 0.20 ML of oxide. This oxide was principally composed of Si(+) and Si(3+) species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p(3/2) peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7 degrees vs < or =0.5 degrees off of the (111) surface orientation) yielded no increase in the rate of oxidation nor change in binding energy of the resultant oxide that formed on the alkylated Si surfaces. Scanning Auger microscopy indicated that the alkylated surfaces formed oxide in isolated, inhomogeneous patches on the surface.

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PubMed2006

Dimensionality dependence of optical properties and quantum confinement effects of hydrogenated silicon nanostructures.

The excited state properties of linear, planar, and spherical hydrogenated silicon nanostructures are studied systematically with use of a time-dependent Hartree-Fock (TDHF) approach with a semiempirical Hamiltonian. The calculated optical gaps decrease significantly from linear, planar, to spherical silicon structures, showing that the optical gap is dimensionality dependent and hence it can be varied by solely managing the shape of the nanostructures. Remarkably, the calculated exciton sizes of the lowest dipole-allowed excited states for both silicon chains and planes are approximately 26 A, revealing that the quantum confinement effect should be significantly enhanced when the sizes of silicon nanostructures are smaller than this value but not dependent on the dimensionality. A similar trend is also observed for hydrogenated silicon spherical clusters.

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PubMed2006

Organically capped silicon nanoparticles with blue photoluminescence prepared by hydrosilylation followed by oxidation.

A facile method of preparing stable blue-emitting silicon nanoparticles that are dispersible in common organic solvents is presented. Oxidation of yellow-emitting silicon nanoparticles with an organic monolayer grafted to their surface, using either UV irradiation in solution or heating in air, converted them to blue-emitting particles. The evolution of the PL spectrum and infrared absorption spectrum of the particles was followed during the oxidation process. The PL spectrum showed a decrease in the PL emission peak near 600 nm and the appearance and increase in intensity of a PL emission peak near 460 nm rather than a smooth blue shift of the emission spectrum from yellow to blue. The organic monolayer grafted to the particle surface was not degraded by this oxidation process, as demonstrated by FTIR and NMR spectroscopy. Similar results were achieved for particles with styrene, 1-octene, 1-dodecene, and 1-octadecene grafted to their surface, demonstrating that it is the silicon nanocrystal, and not the organic component, that is essential to this process. The organic monolayer allows the nanoparticles to form stable, clear colloidal dispersions in organic solvents and provides for the possibility of further chemical functionalization of the particles. Combined with previous work on organically grafted silicon nanoparticles with green through near-infrared emission, this enables the efficient and scalable preparation of stable colloidal dispersions of organically grafted silicon nanoparticles with emission spanning the entire visible spectrum.

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PubMed2002

Ultrafast and direct imprint of nanostructures in silicon.

The fabrication of micrometre- and nanometre-scale devices in silicon typically involves lithography and etching. These processes are costly and tend to be either limited in their resolution or slow in their throughput. Recent work has demonstrated the possibility of patterning substrates on the nanometre scale by 'imprinting' or directed self-assembly, although an etching step is still required to generate the final structures. We have devised and here demonstrate a rapid technique for patterning nanostructures in silicon that does not require etching. In our technique which -- we call 'laser-assisted direct imprint' (LADI) -- a single excimer laser pulse melts a thin surface layer of silicon, and a mould is embossed into the resulting liquid layer. A variety of structures with resolution better than 10 nm have been imprinted into silicon using LADI, and the embossing time is less than 250 ns. The high resolution and speed of LADI, which we attribute to molten silicon's low viscosity (one-third that of water), could open up a variety of applications and be extended to other materials and processing techniques.

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PubMed2006

The influence of the surface migration of gold on the growth of silicon nanowires.

Interest in nanowires continues to grow, fuelled in part by applications in nanotechnology. The ability to engineer nanowire properties makes them especially promising in nanoelectronics. Most silicon nanowires are grown using the vapour-liquid-solid (VLS) mechanism, in which the nanowire grows from a gold/silicon catalyst droplet during silicon chemical vapour deposition. Despite over 40 years of study, many aspects of VLS growth are not well understood. For example, in the conventional picture the catalyst droplet does not change during growth, and the nanowire sidewalls consist of clean silicon facets. Here we demonstrate that these assumptions are false for silicon nanowires grown on Si(111) under conditions where all of the experimental parameters (surface structure, gas cleanliness, and background contaminants) are carefully controlled. We show that gold diffusion during growth determines the length, shape, and sidewall properties of the nanowires. Gold from the catalyst droplets wets the nanowire sidewalls, eventually consuming the droplets and terminating VLS growth. Gold diffusion from the smaller droplets to the larger ones (Ostwald ripening) leads to nanowire diameters that change during growth. These results show that the silicon nanowire growth is fundamentally limited by gold diffusion: smooth, arbitrarily long nanowires cannot be grown without eliminating gold migration.

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PubMed2006

Solution-processed silicon films and transistors.

The use of solution processes-as opposed to conventional vacuum processes and vapour-phase deposition-for the fabrication of electronic devices has received considerable attention for a wide range of applications, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors, some of which have mobilities comparable to that of amorphous silicon (a-Si); but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported. This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon (poly-Si) films by both spin-coating and ink-jet printing, from which we fabricate TFTs with mobilities of 108 cm2 V(-1) s(-1) and 6.5 cm2 V(-1) s(-1), respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a-Si TFTs (< or = 1 cm2 V(-1) s(-1)).

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PubMed1999

The effect of a weak W/SiC interface on the strength of sigma silicon carbide monofilament

Fractography studies have shown that the strength-determining flaws in silicon carbide monofilaments are generally at the core/silicon carbide interface or in the vicinity of the outside, carbon-based coating. In tungsten-cored monofilaments like DERA Sigma, the W/SiC flaws primarily determine the strength. Fracture is accompanied by brittle failure of the tungsten. The crack propagates simultaneously outwards through the silicon carbide, inwards through the tungsten and also around the W/SiC interface before being deflected into the tungsten or out through the silicon carbide. Experiments depositing boundary layers between the tungsten and silicon carbide have resulted in significantly different fracture behaviour. The tungsten fails in a ductile manner and the strength-determining flaws are located predominantly at the outside surface of the silicon carbide. This behaviour is discussed in terms of models proposed by E. Martin and W. Curtin. It is thought that the work will ultimately lead to a significantly stronger, tungsten-based monofilament.

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PubMed2004

Optical properties of passivated silicon nanoclusters: the role of synthesis.

The effect of preparation conditions on the structural and optical properties of silicon nanoparticles is investigated. Nanoscale reconstructions, unique to curved nanosurfaces, are presented for silicon nanocrystals and shown to have lower energy and larger optical gaps than bulk-derived structures. We find that high-temperature synthesis processes can produce metastable noncrystalline nanostructures with different core structures than bulk-derived crystalline clusters. The type of core structure that forms from a given synthesis process may depend on the passivation mechanism and time scale. The effect of oxygen on the optical of different types of silicon structures is calculated. In contrast to the behavior of bulklike nanostructures, for noncrystalline and reconstructed crystalline structures surface oxygen atoms do not decrease the gap. In some cases, the presence of oxygen atoms at the nanocluster surface can significantly increase the optical absorption gap, due to decreased angular distortion of the silicon bonds. The relationship between strain and the optical gap in silicon nanoclusters is discussed.

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PubMed2005

Photoionization dynamics of glycine adsorbed on a silicon cluster: "on-the-fly" simulations.

Dynamics of glycine chemisorbed on the surface of a silicon cluster is studied for a process that involves single-photon ionization, followed by recombination with the electron after a selected time delay. The process is studied by "on-the-fly" molecular dynamics simulations, using the semiempirical parametric method number 3 (PM3) potential energy surface. The system is taken to be in the ground state prior to photoionization, and time delays from 5 to 50 fs before the recombination are considered. The time evolution is computed over 10 ps. The main findings are (1) the positive charge after ionization is initially mostly distributed on the silicon cluster. (2) After ionization the major structural changes are on the silicon cluster. These include Si-Si bond breaking and formation and hydrogen transfer between different silicon atoms. (3) The transient ionization event gives rise to dynamical behavior that depends sensitively on the ion state lifetime. Subsequent to 45 fs evolution in the charged state, the glycine molecule starts to rotate on the silicon cluster. Implications of the results to various processes that are induced by transient transition to a charged state are discussed. These include inelastic tunneling in molecular devices, photochemistry on conducting surfaces, and electron-molecule scattering.

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PubMed1991

Analysis of silicon in human breast and capsular tissue surrounding prostheses and expanders.

Diffusion of polydimethylsiloxane from silicone breast prostheses and soft-tissue expanders has been associated with capsular contraction. We used electron dispersive x-ray analysis and scanning electron microscopy to assess the presence of silicon in capsular tissue surrounding three categories of breast prostheses and expanders. Breast and subcutaneous tissues external to the capsules were used as control specimens. Semiquantitative results allowed capsules to be ranked according to implant type. Silicon was localized within the inner 2.0 mm of capsular tissue. The analyses of tissues from 2 patients exhibiting unilateral, Baker grade IV contraction after bilateral placement of prostheses showed less silicon present in the severely contracted capsule than in the less-contracted capsule. Results from this study diminish the importance of silicon as the initiator of capsular contraction.

Breast Diseases↗