Search PubMed⌕ Search

SEARCH · Search PubMed

Results for “ELECTRONICS”

Search indexed PubMed citations on genomics, clinical trials, systematic reviews and public health. Explore titles, authors and supplied subject terms, then open the PubMed record.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 559 records · Page 31Linked to original sources

Use of electron-electron repulsion energy as a molecular descriptor in QSAR and QSPR studies.

Electron-electron repulsion energy ( ) is presented as a new molecular descriptor to be employed in QSAR and QSPR studies. Here it is shown that this electronic energy parameter is connected to molecular quantum similarity measures (MQSM), and as a consequence can be considered as a complement to steric and electronic parameters in description of molecular properties and biological responses of organic compounds. The present strategy considers the molecule as a whole, thus there is no need to employ contributions of isolated fragments as in many calculations of molecular descriptors, like log P or the Free-Wilson analysis. The procedure has been tested in a widespread set of molecules: alcohols, alkanamides, indole derivatives and 1-alkylimidazoles. Molecular properties, as well as toxicity, are correlated using as a parameter, and extensions to the method are given for handling difficult systems. In almost all studied cases, satisfactory linear relationships were finally obtained.

Computer-Aided Design↗

The essential role of H-F substitution in the electron-phonon interactions and electron transfer in the negatively charged acenes.

The single charge transfer through acenes, partially H-F substituted acenes, and fluoroacenes is discussed. The reorganization energies between the neutral molecules and the corresponding monoanions for partially H-F substituted acenes lie between those for acenes and fluoroacenes. The delocalization of the lowest unoccupied molecular orbitals (LUMO) by substituting hydrogen atoms by fluorine atoms with the highest electronegativity in every element is the main reason why the reorganization energy between the neutral molecule and the monoanion for partially H-F substituted acenes lies between those for acenes and fluoroacenes. This result implies that the negatively charged partially H-F substituted acenes would be better conductors with rapid electron transfer than the negatively charged fluoroacenes if we assume that the overlap of the LUMO between partially H-F substituted acenes is not significantly different from that between two neighboring fluoroacenes. The structures of the monoanions of acenes, fluoroacenes, and partially H-F substituted acenes are optimized under D2h geometry, and the Jahn-Teller effects in the monoanions of benzene and fluorobenzene are discussed. The vibration effect onto the charge transfer problem is also discussed. The C-C stretching modes around 1500 cm(-1) are the main modes converting the neutral molecules to the monoanions in acenes, fluoroacenes, and partially H-F substituted acenes. It can be confirmed from the calculational results that the C-C stretching modes around 1500 cm(-1) the most strongly couple to the LUMO in these molecules. The main reason why the total electron-phonon coupling constants (lLUMO) for the monoanions of acenes in which four outer hydrogen atoms are substituted by fluorine atoms are larger than those for the monoanions of acenes in which several inner hydrogen atoms are substituted by fluorine atoms is suggested. The relationships between the electron transfer and the electron-phonon interactions are discussed. The plot of the reorganization energies against the lLUMO values is found to be nearly linear. In view of these results, the relationships between the normal and superconducting states are briefly discussed.

Journal Article↗

Density functional investigations of the properties and thermochemistry of UF6 and UF5 using valence-electron and all-electron approaches.

The structural properties and thermochemistry of UF6 and UF5 have been investigated using both Hartree-Fock and density functional theory (DFT) approximations. Within the latter approach, the local spin-density approximation, the generalized gradient approximation, and hybrid density functionals were considered. To describe the uranium atom we employed small-core (60 electrons) and large-core (78 electrons) relativistic effective core potentials (RECPs), as well as the all-electron approximation based on the two-component third-order Douglas-Kroll-Hess Hamiltonian. For structural properties, we obtained very good agreement with experiment with DFT and both large and small-core RECPs. The best match with experiment is given by the hybrid functionals with the small-core RECP. The bond dissociation energy (BDE) was obtained from the relative energies of the fragments [UF6 --> UF5 + F], corrected for zero-point energy and spin-orbit interaction. Very good agreement was found between the BDE obtained from all-electron calculations and those calculated with the small-core RECP, while those from the large-core RECP are off by more than 50%. In order to obtain good agreement with experiment in the BDE it is imperative to work with hybrid density functionals and a small-core RECP.

Journal Article↗

Norbornane: an investigation into its valence electronic structure using electron momentum spectroscopy, and density functional and Green's function theories.

We report on the results of an exhaustive study of the valence electronic structure of norbornane (C(7)H(12)), up to binding energies of 29 eV. Experimental electron momentum spectroscopy and theoretical Green's function and density functional theory approaches were all utilized in this investigation. A stringent comparison between the electron momentum spectroscopy and theoretical orbital momentum distributions found that, among all the tested models, the combination of the Becke-Perdew functional and a polarized valence basis set of triple-zeta quality provides the best representation of the electron momentum distributions for all of the 20 valence orbitals of norbornane. This experimentally validated quantum chemistry model was then used to extract some chemically important properties of norbornane. When these calculated properties are compared to corresponding results from other independent measurements, generally good agreement is found. Green's function calculations with the aid of the third-order algebraic diagrammatic construction scheme indicate that the orbital picture of ionization breaks down at binding energies larger than 22.5 eV. Despite this complication, they enable insights within 0.2 eV accuracy into the available ultraviolet photoemission and newly presented (e,2e) ionization spectra, except for the band associated with the 1a(2) (-1) one-hole state, which is probably subject to rather significant vibronic coupling effects, and a band at approximately 25 eV characterized by a momentum distribution of "s-type" symmetry, which Green's function calculations fail to reproduce. We note the vicinity of the vertical double ionization threshold at approximately 26 eV.

Journal Article↗

Electron attachment and detachment: electron affinities of isomers of trifluoromethylbenzonitrile.

Rate constants for electron attachment to the three isomers of trifluoromethylbenzonitrile [(CF(3))(CN)C(6)H(4), or TFMBN] were measured over the temperature range of 303-463 K in a 133-Pa He buffer gas, using a flowing-afterglow Langmuir-probe apparatus. At 303 K, the measured attachment rate constants are 9.0 x 10(-8) (o-TFMBN), 5.5 x 10(-8) (m-TFMBN), and 8.9 x 10(-8) cm(3) s(-1) (p-TFMBN), estimated accurate to +/-25%. The attachment process formed only the parent anion in all three cases. Thermal electron detachment was observed for all three anion isomers, and rate constants for this reverse process were also measured. From the attachment and detachment results, the electron affinities of the three isomers of TFMBN were determined to be 0.70(o-TFMBN), 0.67(m-TFMBN), and 0.83 eV (p-TFMBN), all +/-0.05 eV. G3(MP2) [Gaussian-3 calculations with reduced Møller-Plesset orders (MP2)] calculations were carried out for the neutrals and anions. Electron affinities derived from these calculations are in good agreement with the experimental values.

Journal Article↗

Time-dependent electron localization functions for coupled nuclear-electronic motion.

We study the quantum dynamics in a model system consisting of two electrons and a nucleus which move between two fixed ions in one dimension. The numerically determined wave functions allow for the calculation of time-dependent electron localization functions in the case of parallel spin and of the time-dependent antiparallel spin electron localization functions for antiparallel spin. With the help of these functions, it becomes possible to illustrate how electronic localization is modified through the vibrational wave-packet motion of the nucleus.

Journal Article↗

Electron attachment and detachment, and the electron affinities of C5F5N and C5HF4N.

Rate constants have been measured for electron attachment to C5F5N (297-433 K) and to 2, 3, 5, 6-C5HF4N (303 K) using a flowing-afterglow Langmuir-probe apparatus (at a He gas pressure of 133 Pa). In both cases only the parent anion was formed in the attachment process. The attachment rate constants measured at room temperature are 1.8 +/- 0.5 X 10(-7) and 7 +/- 3 X 10(-10) cm(-3) s(-1), respectively. Rate constants were also measured for thermal electron detachment from the parent anions of these molecules. For C5F5N- detachment is negligible at room temperature, but increases to 2530 +/- 890 s(-1) at 433 K. For 2, 3, 5, 6-C5HF4N-, the detachment rate at 303 K was 520 +/- 180 s(-1). The attachment/detachment equilibrium yielded experimental electron affinities EA(C5F5N)=0.70 +/- 0.05 eV and EA(2, 3, 5, 6-C5HF4N)=0.40 +/- 0.08 eV. Electronic structure calculations were carried out for these molecules and related C5HxF5-xN using density-functional theory and the G3(MP2)//B3LYP compound method. The EAs are found to decrease by 0.25 eV, on average, with each F substitution by H. The calculated EAs are in good agreement with the present experimental results.

Journal Article↗

Paper-like electronic displays: large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks.

Electronic systems that use rugged lightweight plastics potentially offer attractive characteristics (low-cost processing, mechanical flexibility, large area coverage, etc.) that are not easily achieved with established silicon technologies. This paper summarizes work that demonstrates many of these characteristics in a realistic system: organic active matrix backplane circuits (256 transistors) for large ( approximately 5 x 5-inch) mechanically flexible sheets of electronic paper, an emerging type of display. The success of this effort relies on new or improved processing techniques and materials for plastic electronics, including methods for (i) rubber stamping (microcontact printing) high-resolution ( approximately 1 microm) circuits with low levels of defects and good registration over large areas, (ii) achieving low leakage with thin dielectrics deposited onto surfaces with relief, (iii) constructing high-performance organic transistors with bottom contact geometries, (iv) encapsulating these transistors, (v) depositing, in a repeatable way, organic semiconductors with uniform electrical characteristics over large areas, and (vi) low-temperature ( approximately 100 degrees C) annealing to increase the on/off ratios of the transistors and to improve the uniformity of their characteristics. The sophistication and flexibility of the patterning procedures, high level of integration on plastic substrates, large area coverage, and good performance of the transistors are all important features of this work. We successfully integrate these circuits with microencapsulated electrophoretic "inks" to form sheets of electronic paper.

Journal Article↗

Energy-filtered electron diffraction and high-resolution electron microscopy on short-range ordered structure in GaAs(0.5)Sb(0.5).

Characteristic intensity distribution of diffuse scattering in III-V alloy semiconductor GaAs(0.5)Sb(0.5) epitaxially grown was observed by the energy-filtered electron diffraction method with [110] incidence. The diffuse scattering situates at the one-third positions between the fundamental reflections extending parallel to the q002 direction in the reciprocal space. A high-resolution electron microscope image shows weak contrast modulation corresponding to the diffuse scattering. The image processed with the Fourier transform by selecting the diffuse scattering and a fundamental reflection shows small regions consisting of bright dots being elongated along the (111) planes and aligning on the (002) planes, which are considered to result from the ordering of As and Sb during the growth process. The effect of including the fundamental reflection for imaging the ordered regions in the image processing method is also discussed. Finally, based on the results obtained by energy-filtered electron diffraction and high-resolution electron microscopy, a simple structure model for the short-range ordered structure in GaAs(0.5)Sb0.5 is proposed.

Journal Article↗

Detection of characteristic signals from as-doped (<1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction.

Characteristic signals were detected from As-doped (< 1 at.%) regions of silicon by dark-field transmission electron microscopy and convergent-beam electron diffraction. A slight intensity increase was observed in 220 dark-field images, which may be explained by an increase of scattering amplitude due to the As doping. The doped region showed a much higher intensity in 004 dark-field images. The characteristic high intensity was observed for specimens with As concentrations of about 0.09-0.8 at.%. Convergent-beam electron diffraction patterns obtained from the As-doped region showed a characteristic rocking curve for 004 reflection. These characteristics should originate from incoherent elastically scattered electrons due to a static lattice distortion around the doped As atoms. The observed characteristics in dark-field images and rocking curves of the 004 reflection should be a good probe not only for investigating the concentration of doped atoms in Si lattice, but also for the amount of impurity and/or point defects in other crystalline materials.

Journal Article↗

Electron atomic scattering factors, Debye-Waller factors and the optical potential for high-energy electron diffraction.

High-energy electrons may be elastically and inelastically scattered by a solid. To a good approximation the effect of inelastic scattering on the elastically scattered electrons may be taken into account using the concept of the complex optical potential. The optical potential may be calculated using electron atomic scattering factors and Debye-Waller factors, which in turn can be evaluated numerically using Hartree Fock atomic wave functions and shell models of lattice dynamics. The numerical electron atomic scattering factors have been parameterized using five Gaussian functions for all the neutral atoms of the periodic table and for 106 important ions, and the temperature-dependent Debye-Waller B-factors have been fitted by using fourth degree polynomial regression fitting for 19 compounds with the sodium chloride structure, 5 compounds with the cesium chloride structure, 17 compounds with the zinc-blend structure and 68 elemental crystals.

Journal Article↗

Time-resolved and time-averaged determination of the electron-ion collision frequency and electron stopping force in an intense laser field at critical plasma density

Using a ballistic dynamic equation (oscillator model) in the presence of an intense laser field (upsilon(osc)>>upsilon(th)) the time-resolved and time-averaged electron stopping force and electron-ion collision frequency are determined at the critical density (omega(0)=omega(p)) in the presence of laser field harmonics. An expression for the time-averaged energy absorption rate is given. Results show the contributions of single-particle effects and the generated laser harmonics to the electron-ion collision frequency and energy absorption rate. This work also discusses the time-resolved electron-ion collision frequency.

Journal Article↗

Experimental evidence of electric inhibition in fast electron penetration and of electric-field-limited fast electron transport in dense matter

Fast electron generation and propagation were studied in the interaction of a green laser with solids. The experiment, carried out with the LULI TW laser (350 fs, 15 J), used K(alpha) emission from buried fluorescent layers to measure electron transport. Results for conductors (Al) and insulators (plastic) are compared with simulations: in plastic, inhibition in the propagation of fast electrons is observed, due to electric fields which become the dominant factor in electron transport.

Journal Article↗

Resonant production of secondary electrons generating a discrete energy structure in a magnetized electron beam system.

In a system of magnetized electron beams, multiplication of electrons can occur if the incident and return beams (the latter one is produced by secondary electrons emitted at the end of the incident beam) satisfy a resonance condition on the gyration phase. The beams propagate between two boundaries; one is an electron gun and the other is a Faraday cup detector. The resonance condition demands discrete energies (eigenvalues) of the Hamiltonian that generates a propagator of the beam. This model has been compared with Varma's formulation of discrete energies [R. K. Varma and A. M. Punithavelu, Mod. Phys. Lett. A 8, 167 (1993)].

Journal Article↗

Electron and hole focusing in CoSi2/Si(111) observed by ballistic electron emission microscopy

In ballistic electron emission microscopy (BEEM) the propagation of hot carriers in thin metal films has long been treated using a free electron model. While the model explains many experimental findings, it cannot account for the lateral resolution observed for both electrons and holes on epitaxial CoSi(2)/Si(111), where interfacial point defects of atomic size appear as small as 1.3 nm, even below a 5.6 nm thick film. We present ab initio calculations explaining this high resolution in terms of conduction (valence) band structure focusing of electrons (holes), according to a recent Green's function approach to the BEEM process.

Journal Article↗

Effective strength of the electron-electron interaction in simultaneous projectile and target ionization.

The determination of the right balance between the strong-field interaction of the screened target nucleus and the two-center electron-electron interaction has been controversial since the early attempts to describe the stripping of light, swift ions, by heavy targets. In this work, we find a region of influence for the electron-electron contribution which clearly indicates that this interaction is an essential contribution to the stripping process for both light and heavy targets.

Journal Article↗

Electron heating in the measurement of electron temperature by Thomson scattering: are thermal plasmas thermal?

Thomson scattering measurements have yielded electron temperatures T(e) up to 7000 K greater than the ion temperature in 1 bar thermal plasmas. To account for laser heating of electrons, T(e) was measured as a function of laser pulse energy, and an unperturbed T(e) obtained by linear extrapolation to zero pulse energy. It is shown that the absorption of laser energy by the electrons, and the cooling of the electrons by collisions and radiative emission, depend strongly on T(e). Considering all these processes gives T(e) values that are in much closer agreement with the ion temperature.

Journal Article↗

Spectroscopy of the electron-electron interaction in solids.

The spectrum of a photoexcited electron pair carries detailed information on the electron-electron interaction in metals. This is deduced from the results of a theoretical model presented here for the treatment of the double-photoelectron emission from surfaces. Main features in the two-particle spectra are assigned to (a) the exchange-correlation interaction, (b) the electronic band structure, (c) the photoelectron diffraction, and (d) the specific experimental setup. Comparison with experiments is made and common features and differences to the atomic case are pointed out.

Journal Article↗