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At least 55 records · Page 3Linked to original sources
PubMed2005

The optical properties of ZnO hexagonal prisms grown from poly (vinylpyrrolidone)-assisted electrochemical assembly onto Si (111) substrate.

ZnO hexagonal prisms have been grown from poly (vinylpyrrolidone)-assisted electrochemical assembly onto p-type Si (111) substrate. These ZnO prisms arrays are highly (0002) orientated. The (0001) end facets and {1010} side facets of the hexagonal prisms are well defined. The photoluminescence (PL) spectrum of these ZnO prisms shows an intense ultraviolet near band-gap emission with a full width at half maximum of 86 meV at room temperature. The low-temperature PL spectrum is split into well-resolved free and bound exciton emission lines. The temperature dependence of the exciton emission intensities shows a nonmonotonic decaying behavior, which can be explained by the existence of interfacial states.

Journal Article↗
PubMed2005

Area-selective formation of macropore array by anisotropic electrochemical etching on an n-Si(100) surface in aqueous HF solution.

A photoassisted anodization process to fabricate arrays of uniform and straight macropores at selected areas of a Si wafer surface was developed. The front- and backside surfaces of n-type Si(100) wafers were coated with a thin Si(3)N(4) layer, and the frontside layer was micro-patterned using photolithography and reactive ion etching to form an array of microscopic openings at selected areas. The inverted pyramid-shape micropits were formed at these openings by anisotropic etching using aqueous KOH solution; these pits act as the initiation sites for the anodization to form macropores. The electrochemical etching was carried out in aqueous HF solution under illumination from the backside of the wafer, on which Au/Cr electric contact was formed following removal of the Si(3)N(4) layer. To improve the uniformity of the formation condition of the macropores at the selected area, holes were area-selectively generated by controlling the illumination condition during the anodization. For this, micropatterns were formed on the Au/Cr layer at the backside surface, which were aligned to those at the frontside surface. The parameters, such as HF concentration, current density, and wafer thickness, i.e., hole diffusion length, were optimized, and the arrays of uniform and high-aspect-ratio macropores were formed at the selected area of the domain at the silicon surface.

Journal Article↗
PubMed2001

Molecular basis of aberrant apical protein transport in an intestinal enzyme disorder.

The impaired sorting profile to the apical membrane of human intestinal sucrase-isomaltase is the underlying cause in the pathogenesis of a novel phenotype of intestinal congenital sucrase-isomaltase deficiency. Molecular characterization of this novel phenotype reveals a point mutation in the coding region of the sucrase-isomaltase (SI) gene that results in an amino acid substitution of a glutamine by arginine at residue 117 of the isomaltase subunit. This substitution is located in a domain revealing features of a trefoil motif or a P-domain in immediate vicinity of the heavily O-glycosylated stalk domain. Expression of the mutant SI phenotype in epithelial Madin-Darby canine kidney cells reveals a randomly targeted SI protein to the apical and basolateral membranes confirming an exclusive role of the Q117R mutation in generating this phenotype. Unlike wild type SI, the mutant protein is completely extractable with Triton X-100 despite the presence of O-glycans that serve in the wild type protein as an apical sorting signal and are required for the association of SI with detergent-insoluble lipid microdomains. Obviously the O-glycans are not adequately recognized in the context of the mutant SI, most likely due to altered folding of the P-domain that ultimately affects the access of the O-glycans to a putative sorting element.

Animals↗
PubMed2001

Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays.

Photoluminescent, porous silicon pixel arrays were fabricated via a Pt-promoted wet etching of p-type Si(100) using a 1:1:1 EtOH/HF/H2O2 solution. The pixels were fabricated with micrometer-scale design rules on a silicon substrate that had been modified with an octadecyltrichlorosilane (OTS) monolayer patterned using microcontact printing. The printed OTS layer serves as an orthogonal resist template for the deposition of a Pt(0) complex, which preferentially deposits metal species in areas not covered with OTS. The Pt centers generate a localized oxidative dissolution process that pits the Si in the Pt-coated regions, resulting in the formation of a porous silicon microstructure that luminesces around 580 nm upon illumination with a UV source. Scanning electron microscopy and fluorescence microscopy images of the fabricated porous silicon structures showed that features in the size range of approximately 10-150 microm, and possibly smaller, can be generated by this catalytically amplified soft lithographic patterning method. Importantly, the OTS acts as an etch mask, so that, even with significant hole transport, etching is confined to areas coated with the Pt(0) complex.

Journal Article↗
PubMed2000

Cultivation and in situ detection of a thermophilic bacterium capable of oxidizing propionate in syntrophic association with hydrogenotrophic methanogens in a thermophilic methanogenic granular sludge.

The thermophilic, anaerobic, propionate-oxidizing bacterial populations present in the methanogenic granular sludge in a thermophilic (55 degrees C) upflow anaerobic sludge blanket reactor were studied by cultivation and in situ hybridization analysis. For isolation of propionate-degrading microbes, primary enrichment was made with propionate as the sole energy source at 55 degrees C. After several attempts to purify the microbes, a thermophilic, syntrophic, propionate-oxidizing bacterium, designated strain SI, was isolated in both pure culture and coculture with Methanobacterium thermoautotrophicum. Under thermophilic (55 degrees C) conditions, strain SI oxidized propionate, ethanol, and lactate in coculture with M. thermoautotrophicum. In pure culture, the isolate was found to ferment pyruvate. 16S ribosomal DNA sequence analysis revealed that the strain was relatively close to members of the genus Desulfotomaculum, but it was only distantly related to any known species. To elucidate the abundance and spatial distribution of organisms of the strain SI type within the sludge granules, a 16S rRNA-targeted oligonucleotide probe specific for strain SI was developed and applied to thin sections of the granules. Fluorescence in situ hybridization combined with confocal laser scanning microscopy revealed that a number of rod-shaped cells were present in the middle and inner layers of the thermophilic granule sections and that they formed close associations with hydrogenotrophic methanogens. They accounted for approximately 1.1% of the total cells in the sludge. These results demonstrated that strain SI was one of the significant populations in the granular sludge and that it was responsible for propionate oxidation in the methanogenic granular sludge in the reactor.

Bacteria↗
PubMed2003

Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes.

Electron channeling experiments performed on individually scanned, single columns of atoms show that in highly n-type Si grown at low temperatures the primary electrically deactivating defect cannot belong to either the widely accepted class of donor-vacancy clusters or a recently proposed class of donor pairs. First-principles calculations suggest a new class of defects consisting of two dopant donor atoms near a displaced Si atom, which forms a vacancy-interstitial pair. These complexes are consistent with the present experimental results, the measured open volume of the defects, the observed electrical activity as a function of dopant concentration, and the enhanced diffusion of impurities in the presence of deactivated dopants.

Journal Article↗
PubMed2000

Selective high-resolution electrodeposition on semiconductor defect patterns.

We report a new principle and technique that allows one to electrodeposit material patterns of arbitrary shape down to the submicrometer scale. We demonstrate that an electrochemical metal deposition reaction can be initiated selectively at surface defects created in a p-type Si(100) substrate by Si (++) focused ion beam bombardment. The key principle is that, for cathodic electrochemical polarization of p-type material in the dark, breakdown of the blocking Schottky barrier at the semiconductor/electrolyte interface occurs at significantly lower voltages at implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve selective electrochemical deposition.

Journal Article↗
PubMed2006

Electronic control of friction in silicon pn junctions.

A remarkable dependence of the friction force on carrier concentration was found on doped silicon substrates. The sample was a nearly intrinsic n-type Si(100) wafer patterned with 2-micrometer-wide stripes of highly B-doped p-type material. The counter surface was the tip of an atomic force microscope coated with conductive titanium nitride. The local carrier concentration was controlled through application of forward or reverse bias voltages between the tip and the sample in the p and the n regions. Charge depletion or accumulation resulted in substantial differences in friction force. The results demonstrate the capability to electronically control friction in semiconductor devices, with potential applications in nanoscale machines containing moving parts.

Journal Article↗
PubMed2006

Periodic and chaotic oscillations of the electrochemical potential of p-Si in contact with an aqueous (CuSO4+HF) solution, caused by electroless Cu deposition.

Periodic and chaotic oscillations were observed for the potential of p-type Si(111) immersed in an aqueous (HF+CuSO(4)) solution, accompanied by electroless Cu deposition on p-Si. They were, to our knowledge, the first examples of open-circuit potential oscillations observed for semiconductor electrodes. The oscillations appeared only when the Cu deposit formed a continuous porous film composed of mutually connected submicrometer-sized particles. Besides, the Si surface was kept flat within the size less than 50 nm even after the prolonged oscillation for a few hours, though the Si surface should be etched considerably with HF for this time. A plausible model is proposed for the periodic oscillation, in which interestingly coupling of autocatalytic shift in the flat-band potential of Si (U(fb)) caused by the change in the coverage of the Si oxide and the connection and disconnection of the Cu film with the Si surface plays the key role. The appearance of the chaotic oscillation is also explained by taking into account an oscillation-coupled change in the HF or Cu(2+) concentration near the Si surface.

Catalysis↗
PubMed2003

Electrically deactivating nearest-neighbor donor-pair defects in Si.

Based on first-principles density-functional calculations, we propose a class of nearest-neighbor donor pairs that are energetically favorable in highly n-type Si. These donor pairs comprise dopant atoms either fourfold coordinated at the nearest-neighbor distance or threefold coordinated through bond-breaking relaxations. For P and As dopants, the two defect states are very close in energy, less than 0.1 eV, while the threefold coordinated state is more stable by 0.24 eV for Sb dopants. The former state has a very deep donor level close to the valence band maximum, while the defect level lies deep inside the valence band for the latter. Thus, both the donor pairs are electrically inactive at very high doping levels, and they are suggested to be responsible for the observed saturation of carriers.

Journal Article↗
PubMed2006

Resonant electron transfer and luminescent enhancement in a toluene suspension of Si nanocrystals.

Efficient resonant electron transfer from the surface bonding structure to the conduction band of quantum confined Si nanocrystals is observed by Si nanocrystals in a toluene suspension. Based on the electron transfer mechanism, the enhancement of photoluminescence originates from the band-to-band recombination in the p-type Si nanocrystals suspended in a toluene solution. The energy levels of the electrons in the Si nanocrystals chemisorbed with toluene molecules are calculated using the method of linear combination of atomic orbitals, and the characteristics of the obtained density of states is in good agreement with the observed photoluminescence properties.

Journal Article↗
PubMed2004

Reductive deposition of Rh nanostructures on n-type porous silicon: X-ray absorption and X-ray excited optical luminescence studies.

22Porous silicon (PS) prepared from an n-type Si(100) wafer was utilized as a reducing agent and a nanosubstrate for the reduction of rhodium complex ions [RhCl6]3- from aqueous solution to metallic Rh nanostructures on the surface of the n-type PS. The morphology and the electronic properties of the PS layers as well as the rhodium nanostructures were studied by field emission scanning electron microscopy, X-ray absorption fine structures spectroscopy, and X-ray excited optical luminescence (XEOL). The average particle size of Rh nanostructures on PS was estimated to be approximately 7 nm by the X-ray diffraction pattern. The specificity ofXEOL allowed for the investigation of the effect of Rh nanostructures on the optical properties of PS.

Journal Article↗
PubMed2006

Coherent electronic fringe structure in incommensurate silver-silicon quantum wells.

Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron confinement in the film. The fringes correspond to electronic states extending over the silver film as a quantum well and reaching into the silicon substrate as a quantum slope, with the two parts coherently coupled through an incommensurate interface structure.

Journal Article↗
PubMed2005

Self-incompatibility in plants.

Sexual reproduction in many flowering plants involves self-incompatibility (SI), which is one of the most important systems to prevent inbreeding. In many species, the self-/nonself-recognition of SI is controlled by a single polymorphic locus, the S-locus. Molecular dissection of the S-locus revealed that SI represents not one system, but a collection of divergent mechanisms. Here, we discuss recent advances in the understanding of three distinct SI mechanisms, each controlled by two separate determinant genes at the S-locus. In the Brassicaceae, the determinant genes encode a pollen ligand and its stigmatic receptor kinase; their interaction induces incompatible signaling(s) within the stigma papilla cells. In the Solanaceae-type SI, the determinants are a ribonuclease and an F-box protein, suggesting the involvement of RNA and protein degradation in the system. In the Papaveraceae, the only identified female determinant induces a Ca2+-dependent signaling network that ultimately results in the death of incompatible pollen.

Brassicaceae↗
PubMed2005

Diversity among 2481 Escherichia coli from women with community-acquired lower urinary tract infections in 17 countries.

OBJECTIVES: In the recently published ECO.SENS survey, the antimicrobial susceptibility of Escherichia coli from urinary tract infections in women in 16 European countries and Canada was investigated. This study reports the diversity among these E. coli. METHODS: The 2481 E. coli, typed with the PhenePlate (PhP) System utilizing the dynamics and end result of 11 biochemical reactions in a microplate system, were clustered and the Simpson's index of diversity calculated. RESULTS: Seventy-four Common PhP Types (CT) comprising 2067 isolates and 414 Single Types (Si) were identified. Of these, 916 isolates (37%) belonged to one of the four most frequent CT (arbitrarily numbered CT48, 10, 26 and 20). CT48 with 400 isolates and 11 different susceptibility patterns, was widely disseminated across Europe and Canada and was the most frequent type in 13 countries and the second most frequent in the remaining four countries. Sixty-four per cent of the E. coli were susceptible to all eight investigated antimicrobials (CT48: 73%, CT10: 77%, CT26: 62% and CT20: 37%). Forty-six different susceptibility patterns were seen, the three most common being isolated resistance to ampicillin, resistance to ampicillin and trimethoprim, and isolated resistance to trimethoprim. Multiresistance, here defined as resistance to four or more of the investigated antibiotics, was distributed among E. coli belonging to several PhP types. CONCLUSIONS: There was no obvious correlation between the phenotypes identified with the PhP System and the susceptibility pattern. The data did not indicate clonal dissemination within or between countries as a major reason for differences in antimicrobial resistance rates.

Adult↗
PubMed2003

MA(delta)Sb(2-delta) (M = Zr, Hf; A = Si, Ge): a new series of ternary antimonides and not "beta-ZrSb2".

The ternary antimonides ZrSi(delta)Sb(2-delta), HfGe(delta)Sb(2-delta), and ZrGe(delta)Sb(2-delta) were prepared by annealing of the elements in stoichiometric ratios below 800 degrees C. ZrSi(delta)Sb(2-delta) was earlier erroneously described as the binary "beta-ZrSb(2)", which does not exist as such, because the incorporation of tetrel atoms is necessary for the formation of this structure. ZrSi(delta)Sb(2-delta) has a small yet significant phase width with at least 0.066(7) < or = delta < or = 0.115(3), whereas the Ge analogues exist with larger tetrel concentration, i.e., ZrGe(0.211(5))Sb(1.789) and HfGe(0.205(6))Sb(1.795). The whole series of title compounds crystallizes in the Co(2)Si type (space group Pnma), with lattice dimensions of, e.g., for ZrGe(0.211(5))Sb(1.789), a = 730.4(1) pm, b = 395.13(6) pm, c = 957.6(2) pm, V = 0.27635(7) nm(3), Z = 4. The anionic substructure comprises infinite ribbons formed by the atom sites Q1 and Sb2, with Q1 being mixed occupied by Si or Ge and Sb atoms. These ribbons exhibit Q1-Q1 single bonds and Q1-Sb2 "half" bonds. Assuming the validity of the 8 - N rule, one can assign seven valence-electrons to Sb2 but only five to Q1, which might explain the preference of the tetrel atoms for the latter site.

Journal Article↗
PubMed2000

Dipolar coupling information in multispin systems: application of a compensated REDOR NMR approach to inorganic phosphates. Rotational echo double resonance.

An experimental strategy has been developed for measuring multiple dipole-dipole interactions in inorganic compounds using the technique of rotational echo double resonance (REDOR) NMR. Geometry-independent information about the dipole couplings between the observe nuclear species S (arbitrary quantum number) and the heteronuclear species I (spin-12) can be conveniently obtained from the experimental curve of DeltaS/S(0) versus dipolar evolution time by limiting the analysis to the initial data range 0 < delta S/S(0) < 0.30. Numerical simulations have been carried out on a three-spin system of type SI(2) in order to assess the effect of the I-I homonuclear dipole-dipole coupling and the influence of experimental imperfections such as finite pulse length and misadjustments of the 180 degrees pulses applied to the I-spin species. The simulations show further that within the initial data range the effects of such misadjustments can be internally compensated by a modified sequence having an additional 180 degrees pulse on the I channel in the middle of the dipolar evolution periods. Experimental (27)Al¿(31)P¿ REDOR results on the multispin systems Al(PO(3))(3), AlPO(4), [AlPO(4)](12)(C(3)H(7))(4)NF, and Na(3)PO(4) confirm the general utility of this approach. Thus, for applications to unknown systems the compensation strategy obviates calibration procedures with model compounds.

Computer Simulation↗
PubMed2003

Deterministic extinction effect of parasites on host populations.

Experimental studies have shown that parasites can reduce host density and even drive host population to extinction. Conventional mathematical models for parasite-host interactions, while can address the host density reduction scenario, fail to explain such deterministic extinction phenomena. In order to understand the parasite induced host extinction, Ebert et al. (2000) formulated a plausible but ad hoc epidemiological microparasite model and its stochastic variation. The deterministic model, resembles a simple SI type model, predicts the existence of a globally attractive positive steady state. Their simulation of the stochastic model indicates that extinction of host is a likely outcome in some parameter regions. A careful examination of their ad hoc model suggests an alternative and plausible model assumption. With this modification, we show that the revised parasite-host model can exhibit the observed parasite induced host extinction. This finding strengthens and complements that of Ebert et al. (2000), since all continuous models are likely break down when all population densities are small. This extinction dynamics resembles that of ratio-dependent predator-prey models. We report here a complete global study of the revised parasite-host model. Biological implications and limitations of our findings are also presented.

Animals↗