Paraelectric thin films by nanoscale engineering of epitaxy and planar anisotropy for microwave phase shifter applications.
Epitaxial and (110) oriented paraelectric thin films of Ba0.60Sro.40TiO3 were grown on (100) oriented NdGaO3 orthorhombic substrates, and the nonlinear dielectric properties were studied at 10 GHz along selected in-plane crystallographic directions in the film thickness range of 25-1200 nm. The measured dielectric properties show strong residual strain and in-plane directional dependence. For instance, the in-plane relative permittivity is found to vary from as much as 500 to 150 along [110] and [001], respectively, in the 600 nm film. Tunability was found to vary from as much as 54% to 20% in all films and directions. In a given film, the best tunability is observed along the compressed axis in a mixed strain state, 54% along [110] in the 600 nm film. It is shown that, by nanoscale manipulation of epitaxy and planar anisotropy, the return loss and phase shift in a paraelectric can be tuned over a rather wide range. The approach presented herein opens avenues for obtaining various degrees of phase shift on the same film, enabling one with an additional degree of freedom in device design and fabrication as well as multifunctionality.