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Synthesis and Structure of Two New Strontium Germanium Nitrides: Sr(3)Ge(2)N(2) and Sr(2)GeN(2).

We report the structures of two new strontium germanium nitrides synthesized as crystals from the elements in sealed Nb tubes at 750 degrees C using liquid Na as a growth medium. Sr(3)Ge(2)N(2) is isostructural with the previously reported Ba analogue. It crystallizes in P2(1)/m (No. 11), with a = 9.032(2) Å, b = 3.883(1) Å, c = 9.648(2) Å and beta = 112.42(3) degrees, and has two formula units per unit cell. It contains GeN(2)(4)(-) units and additionally |Ge(2)(-) zigzag chains. Sr(2)GeN(2) crystallizes in P4(2)/mbc (No. 135) with a= b = 11.773(2) Å and c= 5.409(1) Å and has Z = 8. It also contains GeN(2)(4)(-) units which have 18 valence electrons and, consequently are bent, like the isoelectronic molecule SO(2).

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Hafnium Germanate from a Hydrous Hafnium Germanium Oxide Gel.

The gel chemistry of germanium is explored through the formation and composition of a hydrous metal oxide precursor gel used in the preparation of the HfGeO(4) and HfGeO(4):Ti X-ray phosphors. The enhanced solubility of hexagonal GeO(2) in dilute ammoniacal solutions is exploited to give a convenient and high-yield precipitation. The precursor gel is shown by FT-IR to be a diphasic mixture of hydrous hafnia and an ammonium germanate gel. Thermal treatment drives the crystallization of a hafnium-rich, simple tetragonal Hf(1)(-)(x)()Ge(x)()O(2) structure at 893 degrees C, that upon further heating to 1200 degrees C yields scheelite HfGeO(4).

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Nucleation and growth of germanium nanowires seeded by organic monolayer-coated gold nanocrystals.

Germanium nanowires, ranging from 10 to 150 nm in diameter, were grown several micrometers in length in cyclohexane heated and pressurized above its critical point. Alkanethiol-protected gold nanocrystals, either 2.5 or 6.5 nm in diameter, were used to seed wire formation. Growth proceeded through a solution-liquid-solid mechanism at growth temperatures ranging from 300 to 450 degrees C. At temperatures exceeding 500 degrees C, large Ge particulates formed due to unfavorable growth kinetics. Temperature, the nature of the precursor, precursor concentration, and the Au:Ge ratio were determining factors in nanowire morphology. The Ge nanowires were characterized using a range of techniques, including XPS, XRD, high-resolution TEM and SEM, nanometer-scale EDS mapping, and DTA.

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Germanium and tin analogues of alkynes and their reduction products.

The reduction of terphenylgermanium(II) or terphenyltin(II) chlorides with alkali metals was investigated. Treatment of Ar'GeCl or ArGeCl (Ar' = C(6)H(3)-2,6-Dipp(2), Dipp = C(6)H(3)-2,6-Pr(i)(2); Ar = C(6)H(3)-2,6-Trip(2), Trip = C(6)H(2)-2,4,6-Pr(i)(3)) with lithium, sodium, or potassium afforded the neutral alkyne analogues Ar'GeGeAr', 1, ArGeGeAr, 2, the singly reduced radical species NaArGeGeAr, 3, or KAr'GeGeAr', 4, or the doubly reduced compounds Li(2)Ar'GeGeAr', 5, Na(2)ArGeGeAr, 6, or K(2)ArGeGeAr, 7. Similarly, reduction of Ar'SnCl or ArSnCl afforded the neutral Ar'SnSnAr', 8, or ArSnSnAr, 9, the radical anions [(THF)(3)Na[rSnSnAr]], 10, [K(THF)(6)][Ar'SnSnAr'], 11, [K(THF)(6)][ArSnSnAr], 12, [K(18-crown-6)(THF)(2)] [ArSnSnAr], 13, or the doubly reduced Na(2)ArSnSnAr, 14, K(2)Ar'SnSnAr', 15, or K(2)ArSnSnAr, 16. The compounds were characterized by UV-vis, (1)H and (13)C NMR or EPR spectroscopy. The X-ray crystal structures of all compounds were determined except those of 2 and 9. The neutral 1 and 8 displayed planar, trans-bent CMMC (M = Ge and Sn) cores with M-M-C angles of 128.67(8) and 125.24(7) degrees, respectively. The M-M bond lengths, 2.2850(6) and 2.6675(4)A, indicated considerable multiple character and a bond order approaching two. Single and double reduction of the neutral species resulted in the narrowing of the M-M-C angles by ca. 12-32 degrees and changes in the Ge-Ge and Sn-Sn bond lengths. One-electron reduction afforded a slight (ca. 0.03-0.05A) lengthening of the Ge-Ge bonds in the case of germanium species 3 and 4 and a greater lengthening (ca. 0.13-0.15A) for the Sn-Sn bonds in the tin compounds 10-13. The addition of another electron yielded salts of the formal dianions [Ar'MMAr'](2)(-) and [ArMMAr](2)(-) which are isoelectronic to the corresponding doubly bonded, neutral arsenic and antimony derivatives. All the dianion salts were obtained as contact ion triples with two alkali metal cations complexed between aryl rings. The Ge-Ge bonds in the dianions of 5-7 were longer, whereas the Sn-Sn distances in the dianions in 14, 15, and 16 were shorter than those in the monoanions. Unusually, the Li(2)Ar'GeGeAr' salt, 5, displayed a longer Ge-Ge bond (by ca. 0.06A) than those of its Na(+) or K(+) analogue salts which was attributed to the greater polarizing power of Li(+). It was concluded that the M-M bond lengths in 3-7 and 10-16 are dependent on several factors that include M-M-C angle, Coulombic repulsion, alkali metal cation size, and the character of the molecular energy levels. The M-M bonding in the neutral compounds was accounted for in terms of a second-order Jahn-Teller mixing of sigma- and a pi-orbital which afforded bond orders near two for the neutral compounds, 1, 2, 8, and 9. Calculations on MeMMMe (M = Ge or Sn) model species showed that the LUMO corresponded to an orbital that had n(+) lone pair character. The slight Ge-Ge bond length increase upon one-electron reduction is consistent with these results, and the further bond lengthening upon double reduction is consistent with increased Coulombic repulsion. The greater Sn-Sn bond length increase seen for one-electron reduction of the tin species is probably due to the increased p-character of orbitals comprising the Sn-Sn sigma-bond when the Sn-Sn-C angle is decreased by ca. 30 degrees. Upon further reduction, the slight decrease in the Sn-Sn bond is probably a result of the reduced importance of Coulombic repulsion due to the larger size of tin and a widening of the Sn-Sn-C angles which may shorten the Sn-Sn sigma-bond.

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Surface chemistry and electrical properties of germanium nanowires.

Germanium nanowires (GeNWs) with p- and n-dopants were synthesized by chemical vapor deposition (CVD) and were used to construct complementary field-effect transistors (FETs). Electrical transport and X-ray photoelectron spectroscopy (XPS) data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Large hysteresis due to water molecules strongly bound to GeO(2) on GeNWs is revealed. Different oxidation behavior and hysteresis characteristics and opposite band bending due to Fermi level pinning by interface states between Ge and surface oxides are observed for p- and n-type GeNWs. Vacuum annealing above 400 degrees C is used to remove surface oxides and eliminate hysteresis in GeNW FETs. High-kappa dielectric HfO(2) films grown on clean GeNW surfaces by atomic layer deposition (ALD) using an alkylamide precursor is effective in serving as the first layer of surface passivation. Lastly, the depletion length along the radial direction of nanowires is evaluated. The result suggests that surface effects could be dominant over the "bulk" properties of small diameter wires.

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Deltahedral germanium clusters: insertion of transition-metal atoms and addition of organometallic fragments.

Reactions of nine-atom deltahedral clusters of germanium with Ni(COD)2 and/or Ni(PPh3)2(CO)2 in ethylenediamine yielded the Ni-centered heteroatomic 10-atom clusters [Ni@(Ge9Ni-CO)]2- and [Ni@(Ge9Ni-en)]3-, as well as the empty 10-atom heteroatomic cluster [Ge9Ni-CO]3-. A ligand exchange reaction between [Ni@(Ge9Ni-CO)]2- and potassium phenylacetylide produced the organically functionalized species [Ni@(Ge9Ni-CCPh)]3-. The empty cluster [Ge9Ni-CO]3- is a bicapped square antiprism where one of the capping vertexes is the nickel atom. The other three clusters are tricapped trigonal prisms where an additional 10th vertex of monoligated nickel caps a triangular base of the trigonal prism. As a result of this, that base opens up, and the distances within it become nonbonding. This ensures that all atoms of the cluster are equidistant from the central nickel atom, i.e., the cluster is very close to spherical. All species were structurally characterized in crystalline compounds with [K-(2,2,2-crypt)]+ countercations. They were also characterized in solution by mass spectrometry, IR, and 13C NMR.

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Germanium and Silicon Linking Strategies for Traceless Solid-Phase Synthesis.

Here we describe the development and application of germanium and silicon linkage strategies for the solid-phase synthesis of aromatic compounds, as demonstrated for 1,4-benzodiazepine derivatives. The metal-aryl bond that attaches the benzodiazepine to the polymeric support may be cleaved by electrophilic reagents such as H(+) and Br(2) to provide the corresponding substituted derivatives. A number of compounds have been prepared in good overall yield for the eight- or nine-step process. This approach can also be applied to the solid-phase synthesis of libraries of other classes of aromatic compounds.

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Reactions of germanium atoms and small clusters with CO: experimental and theoretical characterization of Ge(n)CO (n = 1-5) and Ge2(CO)2 in solid argon.

Reactions of germanium atoms and small clusters with carbon monoxide molecules in solid argon have been studied using matrix isolation infrared absorption spectroscopy. Besides the previously reported GeCO monocarbonyl, the Ge2(CO)2 and Ge(n)CO (n = 2-5) carbonyl molecules are formed spontaneously on annealing and are characterized on the basis of isotopic substitution and theoretical calculations. It is found that Ge2CO, Ge3CO, and Ge5CO are bridge-bonded carbonyl compounds, whereas Ge2(CO)2 and Ge4CO are terminal-bonded carbonyl molecules.

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Anisotropic and passivation-dependent quantum confinement effects in germanium nanowires: a comparison with silicon nanowires.

Electronic structures of hydrogen-passivated germanium nanowires (GeNWs) along the [100], [110], [111], and [112] directions are studied by using the density functional theory within the generalized gradient approximation. The band gaps of the fully relaxed GeNWs along the [100], [110], and [111] directions are all direct at the smaller sizes, while those of the wires along the [112] direction remain indirect. The magnitude of the band gaps of the GeNWs for a given size approximately follows the order of E(g)[100] > E(g)[111] > E(g)[112] > E(g)[110]. Compared with silicon nanowires, GeNWs exhibit stronger quantum confinement effects. Replacement of H by the more stable ethine group is found to lead to a weakening of the quantum confinement effects of GeNWs.

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Covalent attachment of a nickel nitrilotriacetic acid group to a germanium attenuated total reflectance element.

The surface of a germanium internal reflectance element (IRE) was modified to bind 6X-histidine (his)-tagged biomolecules. The step-by-step surface modification was monitored via single-pass attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT-IR). Initially an adlayer of 7-octenyltrimethoxysilane (7-OTMS) was formed on the Ge crystal through the surface hydroxyl groups, which were produced via ozonolysis of the Ge surface. The vinyl moiety of 7-OTMS was oxidized to a carboxylic acid, which was activated by 1,1'-carbonydiimidazole (CDI) to produce a labile imidazole. The labile imidazole that resulted from the CDI coupling was then displaced by the primary amine of nitrilotriacetic acid (NTA). Nickel sulfate was added to the system, and it coordinated with the three carbonyl groups and the nitrogen on NTA, thus leaving the ability of Ni to coordinate with two adjacent histidine residues. Binding of his-tagged biotin to nickel nitrilotriacetic acid (Ni-NTA) was observed by ATR-FT-IR spectroscopy. The surface modification method presented in this paper had minimal nonspecific binding, the Ni-NTA surface was reusable if stored properly, and complete removal of the organic surface was achievable.

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Parallel core-shell metal-dielectric-semiconductor germanium nanowires for high-current surround-gate field-effect transistors.

Core-shell germanium nanowires (GeNW) are formed with a single-crystalline Ge core and concentric shells of nitride and silicon passivation layer by chemical vapor deposition (CVD), an Al2O3 gate dielectric layer by atomic layer deposition (ALD), and an Al metal surround-gate (SG) shell by isotropic magnetron sputter deposition. Surround-gate nanowire field-effect transistors (FETs) are then constructed using a novel self-aligned fabrication approach. Individual SG GeNW FETs show improved switching over GeNW FETs with planar gate stacks owing to improved electrostatics. FET devices comprised of multiple quasi-aligned SG GeNWs in parallel are also constructed. Collectively, tens of SG GeNWs afford on-currents exceeding 0.1 mA at low source-drain bias voltages. The self-aligned surround-gate scheme can be generalized to various semiconductor nanowire materials.

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A mesoporous germanium oxide with crystalline pore walls and its chiral derivative.

Microporous oxides are inorganic materials with wide applications in separations, ion exchange and catalysis. In such materials, an important determinant of pore size is the number of M (where M = Si, Ge and so on) atoms in the rings delineating the channels. The important faujasite structure exhibits 12-ring structures while those of zeolites, germanates and other materials can be much larger. Recent attention has focused on mesoporous materials with larger pores of nanometre scale; however, with the exception of an inorganic-organic hybrid, these have amorphous pore walls, limiting many applications. Chiral porous oxides are particularly desirable for enantioselective sorption and catalysis. However, they are very rare in microporous and mesoporous materials. Here we describe a mesoporous germanium oxide, SU-M, with gyroidal channels separated by crystalline walls that lie about the G (gyroid) minimal surface as in the mesoporous MCM-48 (ref. 9). It has the largest primitive cell and lowest framework density of any inorganic material and channels that are defined by 30-rings. One of the two gyroidal channel systems of SU-M can be filled with additional oxide, resulting in a mesoporous crystal (SU-MB) with chiral channels.

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Characterization of germanium site distribution in zeolite ITQ-7 by photoluminescence.

Zeolite ITQ-7 containing germanium emits luminescence upon excitation at the wavelength of the absorption maxima; control experiments with amorphous GeO2 and all-silica zeolites indicate that the emission is attributable to Ge atoms occupying framework positions; the emission decays on the nanosecond time scale and it fits to variable proportions of three exponential kinetics, this being compatible with the presence of three families of Ge atoms in the solid.

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Formation of [Ar*Ge(CH2C(Me)C(Me)CH2)CH2C(Me)=]2 (Ar* = C6H3-2,6-Trip2; Trip = C6H2-2,4,6-i-Pr3) via reaction of Ar*GeGeAr* with 2,3-dimethyl-1,3-butadiene: evidence for the existence of a germanium analogue of an alkyne.

The reduction of Ar*GeCl (Ar* = C6H3-2,6-Trip2; Trip = C6H2-2,4,6-i-Pr3) with one equivalent of potassium leads to the formation of a germanium analogue of an alkyne Ar*GeGeAr* 1; reaction of 1 with 2,3-dimethyl-1,3-butadiene yields [Ar*Ge(CH2C(Me)C(Me)CH2)CH2C(Me)=]2 2, which was structurally characterized.

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Silicon, germanium, tin and lead analogues of acetylenes.

Recent experimental results which have described the characterization of the first, stable heavier group 14 element analogues of acetylenes are outlined. It is shown that the use of large terphenyl substituents allows the isolation of transition metal-heavier group 14 element complexes that can achieve essential triple bonding by a three-fold orbital interaction between the transition metal and group 14 moiety. On the other hand the alkyne analogues RMMR (R = Ge, Sn or Pb) display increasing distortions from linearity to trans-bent geometry due to the accumulation of non-bonding electron density at the group 14 element. The non-bonding electron density comes at the expense of electron density in the bonding region between the group 14 elements. Accordingly the bond orders are decreased to values that are near double for the germanium and tin derivatives and single for the lead compound.

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Density functional theory study of eight-atom germanium clusters: effect of electron count on cluster geometry.

Density functional theory (DFT) at the hybrid B3LYP level has been applied to the germanium clusters Ge8z(z=-6, -4, -2, 0, +2, +4) using nine initial geometries. For Ge8(2-) the D2d bisdisphenoid structure predicted by the Wade-Mingos rules is not computed to be the global minimum but instead lies 3.9 kcal mol-1 above the Td tetracapped tetrahedron global minimum predicted to exhibit spherical aromaticity. The hyperelectronic clusters Ge(8)4- and Ge8(6-) have nido B8H12 and square antiprism structures, respectively, as global minima in accord with the Wade-Mingos rules and experimental data on E(8)2+(E=Sb, Bi) cations. Hypoelectronic eight-vertex clusters isoelectronic and isolobal with Ge8, Ge8(2+) and Ge(8)4+ are not known experimentally. Their computed structures include smaller polyhedra having one or more capped triangular faces as well as more open non-polyhedral structures.

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