PubMed · 16792115
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Stephen Schmitt. 2006. Virtual diagnostics using cone bean CT.. https://pubmed.ncbi.nlm.nih.gov/16792115/
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The design and demonstration of a holographic optical demultiplexer based on cascaded volume holographic gratings are presented. By serially adding a second holographic grating, which has a different grating period, slant angle, and center wavelength compared with those of the first grating, the operating wavelength range of the optical demultiplexer could be expanded, and, therefore, the number of channels of the holographic demultiplexer is doubled. As a result of the experiment, a 0.4 nm spaced 130- channel demultiplexer with a channel uniformity of 3.5 dB, a 3 dB bandwidth of 0.12 nm, and channel cross talk of -20 dB is experimentally achieved.
Optical data manipulation technologies increasingly employ densely aperiodic optical 3D phase elements. Refinement of such technologies will require the capability to quantitatively characterize the volumetric dielectric modulation of an optical sample to a high level of precision and spatial resolution. We present a scanning transmission microscopy system that uses a position-sensitive detector to impart sensitivity to both the phase and absorption components. We describe the layout of the instrument and then derive its phase and absorption transfer functions. Simulations and experiments are presented to validate the analysis. For phase detection, the instrument possesses depth-sectioning properties similar to those of a confocal microscope without the use of a pinhole, enabling full 3D object reconstruction.
Computer simulations of realistic ion channel structures have always been challenging and a subject of rigorous study. Simulations based on continuum electrostatics have proven to be computationally cheap and reasonably accurate in predicting a channel's behavior. In this paper we discuss the use of a device simulator, SILVACO, to build a solid-state model for KcsA channel and study its steady-state response. SILVACO is a well-established program, typically used by electrical engineers to simulate the process flow and electrical characteristics of solid-state devices. By employing this simulation program, we have presented an alternative computing platform for performing ion channel simulations, besides the known methods of writing codes in programming languages. With the ease of varying the different parameters in the channel's vestibule and the ability of incorporating surface charges, we have shown the wide-ranging possibilities of using a device simulator for ion channel simulations. Our simulated results closely agree with the experimental data, validating our model.