PubMed · 14997266
Characterizing single crystal surfaces using high resolution electron diffraction.
Abstract
Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain (2x1) reconstructed surface have been investigated in situ during Si deposition. The temperature range for formation of this kinetically-stabilized single-domain surface was found to be 400-500 degrees C. This single-domain surface could be preserved for further characterization and experiments after quenching to room temperature.
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D Thien, F-J Meyer zu Heringdorf, P Kury, M Horn-von Hoegen. 2004-03-03. Characterizing single crystal surfaces using high resolution electron diffraction.. https://doi.org/10.1007/s00216-004-2547-8
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