PubMed · 10108261
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J D Beckham. Quality is not enough.. https://pubmed.ncbi.nlm.nih.gov/10108261/
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The movement time of a reach-to-grasp movement increases when obstacles are placed close to the target object. We investigated whether this increase can best be explained by limits on the grip aperture or by limits on the paths of the individual digits. In our experiment subjects were instructed to pick up an object with their index finger and thumb. There was an obstacle at either side of the object. The increase in movement time when either obstacle was placed closer to the object was best described by a model in which the movement amplitude and the distance between each obstacle and the target object are independent factors. We conclude that the way that obstacles influence the movement time in reach-to-grasp movements is determined by the extent to which they limit the digits' paths.
The possibility of acquiring digital radiographic images has been marked with a rapid development. The main advantages of such images are, above all, the electronic dispersal of images, the economical archiving and the computer supported post processing. The recently introduced large-area flat panel detectors offer, contrary to storage-phosphor-based computed radiography, a direct read-out modality. It must be emphasized that differences between direct and indirect detector technology exist,which we will discuss here. The working and advantages of the amorphous selenium based direct-conversion detectors will be examined in detail. Clinical cases will be presented based on a three-year experience with over 200,000 exposures with a detector chest unit.
Cathodoluminescence (CL) spectra from silicon doped and undoped wurtzite n-type GaN have been measured in a SEM under a wide range of electron beam excitation conditions, which include accelerating voltage, beam current, magnification, beam diameter, and specimen temperature. The CL intensity dependence on excitation density was analyzed using a power-law model (I CL proportional, variant J m ) for each of the observed CL bands in this material. The yellow luminescence band present in both silicon and undoped GaN exhibits a close to cube root (m = 0.33) dependence on electron beam excitation at both 77 K and 300 K. However, the blue (at 300 K) and donor-acceptor pair (at 77 K) emission peaks observed in undoped GaN follow power laws with exponents of m = 1 and m = 0.5, respectively. As expected from its excitonic character, the near band edge emission intensity depends linearly (m = 1) in silicon doped GaN and superlinearly (m = 1.2) in undoped GaN on the electron beam current. Results show that the intensities of the CL bands are highly dependent not only on the defect concentration but also on the electron-hole pair density and injection rate. Furthermore, the size of the focussed electron beam was found to have a considerable effect on the relative intensities of the CL emission peaks. Hence SEM parameters such as the objective lens aperture size, astigmatism, and the condenser lens setting must also be considered when assessing CL data based on intensity measurements from this material.