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Biomedical subjects

Zhenan Bao

Publications and source records attributed to Zhenan Bao.

At least 19 recordsLinked to original sources

Thickness dependence of microstructure in semiconducting films of an oligofluorene derivative.

The measurement and optimization of microstructure development in organic semiconductor films is valuable because microstructure in many cases critically impacts electronic performance. We demonstrate a general method to measure microstructure thickness dependence in thin films using surface-sensitive near edge X-ray absorbance fine structure (NEXAFS) spectroscopy. The method is applied to an oligofluorene derivative DDFTTF, which consists of a fluorene-bithiophene-fluorene core that is end-substituted with linear dodecyl groups. The substrate-relative orientations of the aromatic core and the aliphatic end chains are independently determined, and comparing these orientations to terrace heights from atomic force micrographs proves that the end chains are interdigitated or folded. By measuring microstructure development from 6 to 150 nm, we find that DDFTTF exhibits two different preferential microstructures: one with large terraces within which molecules exhibit a strongly vertical orientation, and one with much smaller domains within which molecules exhibit a mildly horizontal orientation. The relative distribution of these two preferential microstructures depends on the distance of the domains from the substrate and the substrate temperature during deposition. The utility of this method is tested using a lamination technique to measure the saturation hole mobility at the top and bottom interface of DDFTTF films. We find that local microstructures with greater pi orbital alignment in the source-drain plane correlate directly to better local saturation hole mobilities.

Crystallography, X-Ray↗

High-performance organic semiconductors: asymmetric linear acenes containing sulphur.

Two new linear acenes with fused thiophene units have been synthesized. These acenes have conjugation lengths between anthracene and pentacene. Thin films of these linear molecules were characterized by ultraviolet spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and field-effect transistor measurements. Submonolayer AFM studies show growth that greatly resembles pentacene, while thin-film growth is dendritic. Mobilites as high as 0.47 cm2 V-1 s-1 have been found for the tetraceno[2,3-b]thiophene and are as high as 0.15 cm2 V-1 s-1 for anthra[2,3-b]thiophene.

Journal Article↗

Patterning organic single-crystal transistor arrays.

Field-effect transistors made of organic single crystals are ideal for studying the charge transport characteristics of organic semiconductor materials. Their outstanding device performance, relative to that of transistors made of organic thin films, makes them also attractive candidates for electronic applications such as active matrix displays and sensor arrays. These applications require minimal cross-talk between neighbouring devices. In the case of thin film systems, simple patterning of the active semiconductor layer minimizes cross-talk. But when using organic single crystals, the only approach currently available for creating arrays of separate devices is manual selection and placing of individual crystals-a process prohibitive for producing devices at high density and with reasonable throughput. In contrast, inorganic crystals have been grown in extended arrays, and efficient and large-area fabrication of silicon crystalline islands with high mobilities for electronic applications has been reported. Here we describe a method for effectively fabricating large arrays of single crystals of a wide range of organic semiconductor materials directly onto transistor source-drain electrodes. We find that film domains of octadecyltriethoxysilane microcontact-printed onto either clean Si/SiO(2) surfaces or flexible plastic provide control over the nucleation of vapour-grown organic single crystals. This allows us to fabricate large arrays of high-performance organic single-crystal field-effect transistors with mobilities as high as 2.4 cm(2) V(-1) s(-1) and on/off ratios greater than 10(7), and devices on flexible substrates that retain their performance after significant bending. These results suggest that our fabrication approach constitutes a promising step that might ultimately allow us to utilize high-performance organic single-crystal field-effect transistors for large-area electronics applications.

Journal Article↗

Hexathiapentacene: structure, molecular packing, and thin-film transistors.

In this communication we report the electrical characteristics of hexathiapentacene (HTP) and emphasize the unusual chemical structure and molecular packing. We report field-effect mobilities as high as 0.04 cm2 V-1 s-1 and current on/off ratios of >105. With crystallographic evidence of unusually long S-S bonds compared to normal S-S bonds, we have suggested a unique resonance structure similar to trithiapentalene, which well explains the bonding characteristics of HTP. This work appears to be the first to determine its molecular structure/packing mode and to study its application in organic transistors.

Journal Article↗

Patterning organic semiconductors using "dry" poly(dimethylsiloxane) elastomeric stamps for thin film transistors.

This communication demonstrates a method of transferring unreacted low molecular weight (LMW) siloxane oligomers from freshly prepared "dry" PDMS stamps for patterning organic semiconductors and conducting polymers into functional devices via selective wetting. The semiconductors were patterned onto the modified surfaces via dip-coating with well-resolved feature sizes as small as 1 mum. Functional transistor arrays exhibited field-effect mobilities as high as 0.07 cm2/Vs. The proposed printing method eliminates the need to ink SAMs for fabricating patterns and results in a simple, fast, and highly reproducible method of patterning organic semiconductors from solution. The method herein also produced a flexible transistor composed of patterned PEDOT source-drain electrodes.

Journal Article↗

Effect of morphology on organic thin film transistor sensors.

This review provides a general introduction to organic field-effect transistors and their application as chemical sensors. Thin film transistor device performance is greatly affected by the molecular structure and morphology of the organic semiconductor layer. Various methods for organic semiconductor deposition are surveyed. Recent progress in the fabrication of organic thin film transistor sensors as well as the correlation between morphology and analyte response is discussed.

Journal Article↗

Structure and bonding issues at the interface between gold and self-assembled conjugated dithiol monolayers.

Organic thiols have received extensive attention recently because of their relative stability and ease of examination compared to other potential molecular electronic materials. In this work, scanning probe microscopy (SPM) is used to study (i) the structural properties of self-assembled monolayers (SAMs) containing conjugated dithiols and (ii) the formation of the upper molecule-metal interface on dithiol SAMs. The top gold film is deposited either by thermal evaporation or by nano-transfer printing (nTP). Generally, the utility of thermal evaporation is limited because of Au diffusion through the SAMs. However, several dithiol SAMs are identified in this work that bond well to Au overlayers and act as satisfactory diffusion barriers. Coassembly of conjugated dithiols and alkanemonothiols is suggested as a route to obtain dithiols that are denser packed and more vertical (than is obtained from pure dithiol routes). High-yield nTP is demonstrated on coassembled SAMs. Advantages and limitations of different Au deposition and transfer techniques are compared on a variety of length scales.

Gold↗

Patterned growth of large oriented organic semiconductor single crystals on self-assembled monolayer templates.

This work demonstrates a method for inducing site-specific nucleation and subsequent growth of large oriented organic semiconductor single crystals using micropatterned self-assembled monolayers (SAMs). We demonstrate growth of oriented, patterned, and large organic semiconductor single crystals for potential use in organic electronic devices. The control over multiple parameters in a single system has not yet been reported. The ability to control various aspects of crystal growth in one system provides a powerful technique for the bottom-up fabrication of organic single-crystal semiconductor devices.

Journal Article↗

Conducting AFM and 2D GIXD studies on pentacene thin films.

Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation between the crystalline structure of the initial submonolayer of a pentacene film and the mobility of the corresponding 60-nm-thick films showing terrace-like structure, as confirmed by 2D grazing-incidence X-ray diffraction and atomic force microscopy. Specifically, multilayered pentacene films, grown from single crystal-like faceted islands on HMDS-treated surface, have shown much higher charge mobility (mu = 3.4 +/- 0.5 cm2/Vs) than those with polycrystalline dendritic islands (mu = 0.5 +/- 0.15 cm2/Vs) on OTS-treated ones.

Crystallization↗

Nanowire lithography: fabricating controllable electrode gaps using Au-Ag-Au nanowires.

A method to fabricate nanowire electrodes possessing controllable gaps is described. The method relies on electrochemical deposition and selective chemical etching or heating to selectively remove the Ag segment of Au-Ag-Au nanowires. Because the thickness of the Ag segment directly dictates the size of the nanogap, the gap width can be easily controlled during the nanowire fabrication process. Herein, we demonstrate gaps with 2 microm, 100 nm and 20 nm widths via the above-mentioned approaches. In addition, we observed that small gaps (approximately 20 nm) can be formed through annealing Au-Ag-Au nanowires at 200 degrees C in air. Electrical contact between nanowire electrodes and contact pads is studied. Using nanowire electrodes with a 100 nm gap, we subsequently fabricate organic field effect transistors (FETs) with regioregular poly(3-hexylthiophene).

Electric Conductivity↗

Synthesis, crystal structure, and transistor performance of tetracene derivatives.

The substitution of chloro or bromo groups in tetracene gives rise to the change of crystal structure, having a substantial effect on carrier transport. Halogenated tetracene derivatives were synthesized and grown into single crystals. Monosubstituted 5-bromo- and 5-chlorotetracenes have the herringbone-type structure, while 5,11-dichlorotetracene has the slipped pi stacking structure. Mobility of 5,11-dichlorotetracene was measured to be as high as 1.6 cm2/V.s in single-crystal transistors. The pi stacking structure, which enhances pi orbital overlap and facilitates carrier transport, may thus be responsible for this high mobility.

Journal Article↗

Synthesis of polymer dielectric layers for organic thin film transistors via surface-initiated ring-opening metathesis polymerization.

The use of surface-initiated ring-opening metathesis polymerization (SI-ROMP) for producing polymer dielectric layers is reported. Surface tethering of the catalyst to Au or Si/SiO2 surfaces is accomplished via self-assembled monolayers of thiols or silanes containing reactive olefins. Subsequent SI-ROMP of norbornene can be conducted under mild conditions. Pentacene semiconducting layers and gold drain/source electrodes are deposited over these polymer dielectric films. The resulting field effect transistors display promising device characteristics, demonstrating for the first time that SI-ROMP can be used in the construction of organic thin-film electronic devices.

Journal Article↗

Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono- and dithiols.

We present grazing-incidence Fourier transform infrared and AFM data of Au, Al, and Ti vapor-deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols. SAMs of 4,4'''-dimercapto-p-quaterphenyl, 4,4"-dimercapto-p-terphenyl, and 4,4'-dimercapto-p-biphenyl have reactive thiols at the SAM/vacuum interface that interact with vapor-deposited Au or Al atoms, preventing metal penetration. Conjugated monothiols lack such metal blocking groups, and metals (Au, Al) can penetrate into their SAMs. Vapor deposition of Ti onto conjugated mono- and dithiol SAMs and onto hexadecanethiol SAMs destroys the monolayers.

Letter↗

Organic light-emitting diodes formed by soft contact lamination.

Although tremendous progress has been made in organic light-emitting diodes (OLEDs), with few exceptions they are fabricated in the standard way by sequentially depositing active layers and electrodes onto a substrate. Here we describe a different approach for building OLEDs, which is based on physical lamination of thin metal electrodes supported by an elastomeric layer against an electroluminescent organic. This method relies only on van der Waals interactions to establish spatially homogeneous, intimate contacts between the electrodes and the organic. We find that devices fabricated in this manner have better performance than those constructed with standard processing techniques. The lamination approach avoids forms of disruption that can be introduced at the electrode/organic interface by metal evaporation and has a reduced sensitivity to pinhole or partial pinhole defects. In addition, because this form of "soft" contact lamination is intrinsically compatible with the techniques of soft lithography, it is easy to build patterned OLEDs with feature sizes into the nanometer regime. This method provides a new route to OLEDs for applications ranging from high performance displays to storage and lithography systems that rely on subwavelength light sources.

Journal Article↗

Fine printing.

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Electronics↗

Retraction.

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Retraction Notice↗