"Wrong" bond interactions at inversion domain boundaries in GaAs.
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Biomedical subjects
WR Lambrecht
Publications and source records attributed to WR Lambrecht.
Electronic structure of BeCN2: A proposed nearly direct wide-band-gap semiconductor.
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Calculated elastic constants and deformation potentials of cubic SiC.
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Electronic structure and bonding at SiC/AlN and SiC/BP interfaces.
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Erratum: Electronic-structure study of the (110) inversion domain boundary in SiC
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Interface dependence of band offsets in lattice-matched isovalent heterojunctions.
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Erratum: Electronic structure of (diamond C)/(sphalerite BN) (110) interfaces and superlattices
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Self-consistent dipole theory of heterojunction band offsets.
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Interface-bond-polarity model for semiconductor heterojunction band offsets.
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Electronic-structure study of the (110) inversion domain boundary in SiC.
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Electronic structure of (diamond C)/(sphalerite BN) (110) interfaces and superlattices.
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Efficient direct calculation method for dielectric response in semiconductors.
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Theory of semiconductor heterojunction valence-band offsets: From supercell band-structure calculations toward a simple model.
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Electronic structure and properties of NiSi2 and CoSi2 in the fluorite and adamantane structures.
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Analysis of core-level shifts in some metallic Ni compounds.
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Minimal basis sets in the linear muffin-tin orbital method: Application to the diamond-structure crystals C, Si, and Ge.
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