Noble-metal-CdTe interface formation.
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Biomedical subjects
WE Spicer
Publications and source records attributed to WE Spicer.
Physical nature of the InP near-surface defect acceptor and donor states.
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Determination of a natural valence-band offset: The case of HgTe-CdTe.
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Erratum: Au-GaAs(110) interface: Photoemission studies of the effects of temperature
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Electrical study of Schottky-barrier heights on atomically clean p-type InP(110) surfaces.
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Microscopic metal clusters and Schottky barrier formation.
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Overlayer-cation reaction at the Pt/Hg1-xCdxTe interface.
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Si/InP(110) heterojunction.
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Au-GaAs(110) interface: Photoemission studies of the effects of temperature.
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Effect of different cation-anion bond strengths on metal-ternary-semiconductor interface formation: Cu/Hg0.75Cd0.25Te and Cu/CdTe.
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Initial stage of thermal oxidation of the Si(111)-(7 x 7) surface.
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Erratum: Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces
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Soft-x-ray photoemission study of Co-n-type InP(110) interface.
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Binding-energy shifts from alloying at metal-compound-semiconductor interfaces.
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Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces.
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Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfaces.
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Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110).
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Growth, chemical interaction, and Schottky-barrier formation of column-III metal overlayers on InP(110).
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