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Tobin J Marks

Publications and source records attributed to Tobin J Marks.

At least 19 recordsLinked to original sources
PubMed2006

Quantum chemical analysis of electronic structure and n- and p-type charge transport in perfluoroarene-modified oligothiophene semiconductors.

Density-functional theory (DFT) is employed to investigate the structural, electronic, and transport properties of several isomeric fluoroarene-oligothiophene-based semiconductors. Three oligothiophene systems varying in the perfluoroarene group positions within the molecule are studied to understand the electronic structure leading to the observed mobility values and to the n- or p-type behavior in these structures. Analyses of both intermolecular interactions in dimers and extended interactions in crystalline structures afford considerable insight into the electronic properties and carrier mobilities of these materials, as well as the polarity of the charge carriers. From the calculated carrier effective masses, we find that sterically governed molecular planarity plays a crucial role in the transport properties of these semiconductors. Our calculations correlate well with experimentally obtained geometries, highest-occupied molecular orbital (HOMO)/lowest-unoccupied molecular orbital (LUMO) energies, and the experimental carrier mobility trends among the systems investigated.

Journal Article↗
PubMed2006

High-capacitance organic nanodielectrics: effective medium models of their response.

Molecular and macromolecular high-permittivity organic gate dielectric materials have been the focus of recent experimental research as a consequence of their promising properties for organic and inorganic field effect transistor (FET) applications. Two types of molecular thin films, self-assembled nanodielectrics (SANDs) and cross-linked polymer blends (CPBs), have been shown experimentally to afford high capacitances and low FET operating voltages. In an effort to design optimized nanostructures having even larger capacitances, lower leakage current densities, and further reduced FET operating voltages, we discuss approaches for computing the effective permittivities of each nanodielectric motif and investigate how molecular arrangements impact overall device capacitance. The calculated frequency-dependent capacitances, derived from Maxwell-Wagner theory applied to the Maxwell-Garnett effective medium approximation, agree fairly well with the experimental values for the two types of nanodielectrics. Predictions of larger capacitance SANDs are made with the two-capacitors-in-series equivalent circuit, where the layered, self-assembled structure is viewed as two different capacitors. The Maxwell-Garnett and Polder-Van Santen effective medium approximations are used to predict the dielectric response of higher permittivity polymer cross-linked blends. In calculations showing good agreement between theory and experiment, and with all parameters being equal, it is found that greater capacitances should be achievable with cross-linked composites than with layered composites.

Journal Article↗
PubMed2006

High-performance transparent inorganic-organic hybrid thin-film n-type transistors.

High-performance thin-film transistors (TFTs) that can be fabricated at low temperature and are mechanically flexible, optically transparent and compatible with diverse substrate materials are of great current interest. To function at low biases to minimize power consumption, such devices must also contain a high-mobility semiconductor and/or a high-capacitance gate dielectric. Here we report transparent inorganic-organic hybrid n-type TFTs fabricated at room temperature by combining In2O3 thin films grown by ion-assisted deposition, with nanoscale organic dielectrics self-assembled in a solution-phase process. Such TFTs combine the advantages of a high-mobility transparent inorganic semiconductor with an ultrathin high-capacitance/low-leakage organic gate dielectric. The resulting, completely transparent TFTs exhibit excellent operating characteristics near 1.0 V with large field-effect mobilities of >120 cm2 V(-1) s(-1), drain-source current on/off modulation ratio (I(on)/I(off)) approximately 10(5), near-zero threshold voltages and sub-threshold gate voltage swings of 90 mV per decade. The results suggest new strategies for achieving 'invisible' optoelectronics.

Journal Article↗
PubMed2006

Nuclearity and cooperativity effects in binuclear catalysts and cocatalysts for olefin polymerization.

A series of bimetallic organo-group 4 "constrained geometry" catalysts and binuclear bisborane and bisborate cocatalysts have been synthesized to probe catalyst center-catalyst center cooperativity effects on olefin enchainment in homogenous olefin polymerization and copolymerization processes. Significant nuclearity effects are found versus mononuclear controls, and the effect can be correlated with metal-metal approach distances and ion pairing effects. Novel polymer structures can be obtained by using such binuclear catalyst/cocatalyst systems.

Journal Article↗
PubMed2006

Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors.

This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO(2)/p(+)-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO(2) having minimal gate leakage and surface roughness significantly enhance the mobilities of overlying air-sensitive n-type semiconductors to as high as approximately 2 cm(2)/(V s) for alpha,omega-diperfluorohexylcarbonylquaterthiophene polystyrene/SiO(2). Electron trapping due to silanol and carbonyl functionalities at the semiconductor-dielectric interface is identified as the principal origin of the mobility sensitivity to the various surface chemistries in the case of n-type semiconductors having high LUMO energies. Thiophene-based n-type semiconductors exhibiting similar film morphologies and microstructures on various bilayer gate dielectrics therefore provide an incisive means to probe TFT performance parameters versus semiconductor-dielectric interface relationships.

Journal Article↗
PubMed2006

Dithienosilole- and dibenzosilole-thiophene copolymers as semiconductors for organic thin-film transistors.

The synthesis and physicochemical properties of a new class of thiophene/arenesilole-containing pi-conjugated polymers are reported. Examples of this new polymer class include the following: poly(2,5-bis(3',3' '-dihexylsilylene-2',2' '-bithieno)thiophene) (TS6T1), poly(2,5'-bis(3' ',3' ''-dihexylsilylene-2' ',2' ''-bithieno)bithiophene) (TS6T2), poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1' ',1' ''-biphenyl)thiophene) (BS8T1), and poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1' ',1' ''-biphenyl)bithiophene) (BS8T2). Organic field-effect transistors (OFETs) with hole carrier mobilities as high as 0.02-0.06 cm2/V s in air, low turn-on voltages, and current on/off ratios >105-106 are fabricated using solution processing techniques with the above polymers as the active channel layer. OFETs based on this polymer class exhibit excellent ambient operational stability.

Journal Article↗
PubMed2006

Microscale features and surface chemical functionality patterned by electron beam lithography: a novel route to poly(dimethylsiloxane) (PDMS) stamp fabrication.

Poly(dimethylsiloxane) (PDMS) has become a ubiquitous material for microcontact printing, yet there are few methods available to pattern a completed PDMS stamp in a single step. It is shown here that electron beam lithography (EBL) is effective in writing patterns directly onto cured PDMS stamps, thus overcoming the need for multiple patterning steps. Not only does this method allow the modification of an existing lithographic pattern, but new 3D features such as cones, pits, and channels can also be fabricated. EBL can also be used to fabricate PDMS masks for photolithography whereby 1:1 pattern transfer into a photoresist is achieved. Additionally, direct EBL writing of surface chemical features has been achieved using a PDMS stamp coated with a self-assembled monolayer. An electrostatic mechanism appears to be operative in the EBL patterning process, as supported by calculations, thermogravimetric analysis, time-of-flight secondary ion mass spectroscopy, optical and atomic force microscopy, and chemical functionalization assays.

Dimethylpolysiloxanes↗
PubMed2006

X-Shaped electro-optic chromophore with remarkably blue-shifted optical absorption. Synthesis, characterization, linear/nonlinear optical properties, self-assembly, and thin film microstructural characteristics.

A novel type of "X-shaped" two-dimensional electro-optic (EO) chromophore with extended conjugation has been synthesized and characterized. This chromophore is found to exhibit a remarkably blue-shifted optical maximum (357 nm in CH(2)Cl(2)) while maintaining a very large first hyperpolarizability (beta). Hyper-Rayleigh Scattering (HRS) measurements at 800 nm provide a beta(zzz) value of 1840 x 10(-30) esu. Self-assembled thin films of this chromophore were fabricated via a layer-by-layer chemisorptive siloxane-based approach. The chromophoric multilayers have been characterized by transmission optical spectroscopy, advancing contact angle measurements, synchrotron X-ray reflectivity, atomic force microscopy, and angle-dependent polarized second harmonic generation spectroscopy. The self-assembled chromophoric films exhibit a dramatically blue-shifted optical maximum (325 nm) while maintaining a large EO response (chi(2)(333) approximately 232 pm/V at 1064 nm; r(33) approximately 45 pm/V at 1310 nm). This work demonstrates an attractive approach to developing EO materials offering improved nonlinearity-transparency trade-offs.

Journal Article↗
PubMed2006

Fluorocarbon-modified organic semiconductors: molecular architecture, electronic, and crystal structure tuning of arene- versus fluoroarene-thiophene oligomer thin-film properties.

We present here the systematic synthesis and comparative physicochemical characterization of a series of regiochemically varied and core size extension-modulated arene(perfluoroarene)-thiophene oligomers. The molecules investigated are: 5,5''-diphenyl-2,2':5',2'':5'',2'''-quaterthiophene (1), 5,5'-bis[1-[4-(thien-2-yl)phenyl]]-2,2'-dithiophene (2), 4,4'-bis[5-(2,2'-dithiophenyl)]-biphenyl (3), 5,5''-diperfluorophenyl-2,2':5',2'':5'',2'''-quaterthiophene (4), 5,5'-bis[1-[4-(thien-2-yl)perfluorophenyl]]-2,2'-dithiophene (5), 4,4'-bis[5-(2,2'-dithiophenyl)]-perfluorobiphenyl (6), 5,5''-diperfluorophenyl-2,2':5',2''-tertthiophene (7), 5,5'-diperfluorophenyl-2,2'-dihiophene (8), and 5,5-diperfluorophenylthiophene (9). Trends in optical absorption and emission parameters, molecular structures as defined by single-crystal X-ray diffraction, as well as electrochemical redox processes are described. The morphologies and microstructures of the vapor-deposited films grown over a range of growth temperatures have also been characterized. Field-effect transistor (FET) measurements demonstrate that all of these materials are FET-active and, depending on the molecular architecture, exhibit comparably good p- or n-type mobility when optimum film microstructural order is achieved. A very large n-channel mobility of approximately 0.5 cm2/Vs with I(on)/I(off) ratios > 10(8) is achieved for films of 4.

Crystallography, X-Ray↗
PubMed2006

Gate-planarized low-operating voltage organic field-effect transistors enabled by hot polymer pressing/embedding of conducting metal lines.

A new process for fabricating patterned, gate-planarized organic field-effect transistors (OFETs) based on hot polymer pressing/embedding of conducting metal features is demonstrated. This methodology is applicable to a variety of gate conductors and polymer matrices. Vapor-deposited Al and Au and printed Ag lines as narrow as 15 mum are transferred from a substrate donor to the hot-pressed polymer, resulting in a new smooth, flat, self-planarized gate-plastic substrate composite on which thin polymer insulators can be spin-coated with great uniformity. OFETs fabricated on these structures with both p- and n-type semiconductors function at low voltages, opening new routes to printed electronic circuits and products.

Journal Article↗
PubMed2006

Alkenylsilane effects on organotitanium-catalyzed ethylene polymerization. Toward simultaneous polyolefin branch and functional group introduction.

The comonomer 5-hexenylsilane is introduced into organotitanium-mediated ethylene polymerizations to produce silane-terminated ethylene/5-hexenylsilane copolymers. The resulting polymers were characterized by 1H and 13C NMR, GPC, and DSC. High activities (up to 107 g polymer/(mol Ti.atm ethylene.h)) and narrow polydispersities are observed in the polymerization/chain transfer process. Ethylene/5-hexenylsilane copolymer molecular weights are found to be inversely proportional to 5-hexenylsilane concentration, supporting a silanolytic chain transfer mechanism. Control experiments indicate that chain transfer mechanism by 5-hexenylsilane is significantly more efficient than that of n-hexylsilane for organotitanium-mediated ethylene polymerization. The present study represents the first case in which a functionalized comonomer is efficiently used to effect both propagation and chain transfer chemistry during olefin polymerization.

Journal Article↗
PubMed2006

Electron donor-bridge-acceptor molecules with bridging nitronyl nitroxide radicals: influence of a third spin on charge- and spin-transfer dynamics.

Appending a stable radical to the bridge molecule in a donor-bridge-acceptor system (D-B-A) is potentially an important way to control charge- and spin-transfer dynamics through D-B-A. We have attached a nitronyl nitroxide (NN*) stable radical to a D-B-A system having well-defined distances between the components: MeOAn-6ANI-Ph(NN*)-NI, where MeOAn = p-methoxyaniline, 6ANI = 4-(N-piperidinyl)naphthalene-1,8-dicarboximide, Ph = phenyl, and NI = naphthalene-1,8:4,5-bis(dicarboximide). MeOAn-6ANI, NN*, and NI are attached to the 1, 3, and 5 positions of the Ph bridge. Using both time-resolved optical and EPR spectroscopy, we show that NN* influences the spin dynamics of the photogenerated triradical states (2,4)(MeOAn(+)*-6ANI-Ph(NN*)-NI(-)*), resulting in slower charge recombination within the triradical compared to the corresponding biradical lacking NN*. The observed spin-spin exchange interaction between the photogenerated radicals MeOAn(+)(*) and NI(-)(*) is not altered by the presence of NN*, which only accelerates radical pair intersystem crossing. Charge recombination within the triradical results in the formation of (2,4)(MeOAn-6ANI-Ph(NN*)-(3)NI), in which NN* is strongly spin-polarized. Normally, the spin dynamics of correlated radical pairs do not produce a net spin polarization; however, net spin polarization appears on NN* with the same time constant as describes the photogenerated radical ion pair decay. This effect is attributed to antiferromagnetic coupling between NN* and the local triplet state (3)NI, which is populated following charge recombination. This requires an effective switch in the spin basis set between the triradical and the three-spin charge recombination product having both NN* and (3)NI present.

Journal Article↗
PubMed2006

Strategies for electrooptic film fabrication. Influence of pyrrole-pyridine-based dibranched chromophore architecture on covalent self-assembly, thin-film microstructure, and nonlinear optical response.

The new dibranched, heterocyclic "push-pull" chromophores bis{1-(pyridin-4-yl)-2-[2-(N-methylpyrrol-5-yl)]ethane}methane (1), 1-(pyrid-4-yl)-2-(N-methyl-5-formylpyrrol-2-yl)ethylene (2), {1-(N-methylpyridinium-4-yl)-2-[2-(N-methylpyrrol-5-yl)]ethane}{(1-(pyridin-4-yl)-2-[2-(N-methylpyrrol-5-yl)]ethane}methane (3), N-methyl-2-[1-(N-methylpyrid-4-yl)ethen-2-yl]-5-[pyrid-4-yl]ethen-2-yl]pyrrole iodide (4), bis{1-(N-methyl-4-pyridinio)-2-[2-(N-methylpyrrol-5-yl)]ethane}methane iodide (5), and N-methyl-2,5-[1-(N-methylpyrid-4-yl)ethen-2-yl]pyrrole iodide (6) have been synthesized and characterized. The neutral (1 and 2) and monomethyl salts (3 and 4) undergo chemisorptive reaction with iodobenzyl-functionalized surfaces to afford chromophore monolayers SA-1/SA-2 and SA-3/SA-4, respectively. Molecular structures and other physicochemical properties have been defined by (1)H NMR, optical spectroscopy, and XRD. Thin-film characterization by a variety of techniques (optical spectroscopy, specular X-ray reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and angle-dependent polarized second harmonic generation) underscore the importance of the chromophore molecular architecture as well as film growth method on film microstructure and optical/electrooptic response.

Journal Article↗
PubMed2006

Monolayer to multilayer nanostructural growth transition in N-type oligothiophenes on Au(111) and implications for organic field-effect transistor performance.

The evolution in growth morphology and molecular orientation of n-type semiconducting alpha,omega-diperfluorohexyl-quaterthiophene (DFH-4T) on Au(111) is investigated by scanning tunneling microscopy and scanning tunneling spectroscopy as the film thickness is increased from one monolayer to multilayers. Monolayer-thick DFH-4T films are amorphous and morphologically featureless with a large pit density, whereas multilayer films exhibit drastically different terraced structures consisting of overlapping platelets. Large changes in DFH-4T molecular orientation are observed on transitioning from two to four monolayers. Parallel electrical characterization of top-versus-bottom contact configuration DFH-4T FETs with Au source/drain electrodes reveals greatly different mobilities (mu(TOP) = 1.1 +/- 0.2 10(-2) cm(2)V(-1)s(-1) versus mu(BOTTOM) = 2.3 +/- 0.5 10(-5) cm(2)V(-1)s(-1)) and contact resistances (R(C-TOP) = 4-12 MOmegacm vs R(C-BOTTOM) > 1 GOmegacm). This study provides important information on the organic semiconductor-source\drain electrode interfaces and explains why top-contact OFET devices typically have superior performance. By direct visualization, it demonstrates that the DFH-4T film growth transition from monolayer to multilayer on Au is accompanied by dramatic morphology and molecular orientation changes, starting from an amorphous, pitted, and disordered monolayer, to crystalline and smooth bi/tetralayers but with the molecules reoriented by 90 degrees . These chemisorption-derived inhomogenities at the contact-molecule interface and the large monolayer --> multilayer --> bulk microstructural changes are in accord with the large bottom-contact device resistance and poor OFET performance.

Electric Conductivity↗
PubMed2006

Organic light-emitting diodes having carbon nanotube anodes.

Single-walled carbon nanotube (SWNT) films on flexible PET (polyethyleneterephthalate) substrates are used as transparent, flexible anodes for organic light-emitting diodes (OLEDs). For polymer-based OLEDs having the structure: SWNT/PEDOT-PSS:MeOH/TFB (poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine)) + TPD-Si(2) (4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl) /BT (poly(9,9-dioctylfluorene-co-benzothiadiazole))/CsF/Al, a maximum light output of 3500 cd/m(2) and a current efficiency of 1.6 cd/A have been achieved. The device operational lifetime is comparable to that of devices with Sn-doped In(2)O(3) (ITO)/PET anodes. The advantages of this novel type of anode over conventional ITO are discussed.

Electrodes↗