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Biomedical subjects

T-C Chiang

Publications and source records attributed to T-C Chiang.

16 recordsLinked to original sources

Coherent electronic fringe structure in incommensurate silver-silicon quantum wells.

Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron confinement in the film. The fringes correspond to electronic states extending over the silver film as a quantum well and reaching into the silicon substrate as a quantum slope, with the two parts coherently coupled through an incommensurate interface structure.

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Umklapp-mediated quantization of electronic states in Ag films on Ge(111).

We employ angle-resolved photoemission to study the electronic structure of atomically uniform films of Ag grown on Ge(111). A new kind of quantum well state is observed near a specific emission direction away from the surface normal. In contrast with the usual quantum well state arising from electron confinement by specular reflections at the surface and interface of the film, the new kind involves retroreflections, or umklapp reflections, at the interface. It requires four reflections, instead of the usual two reflections, to complete a coherent interference path.

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Sublimation of atomic layers from a chromium surface.

We employ low-energy electron microscopy to study the kinetics of thermal etching, or sublimation, of Cr(001) at approximately 1100 K. Atomic layers are removed from the surface by spontaneous nucleation and growth of two-dimensional vacancy islands, by rotation of spiral steps, and by island decay. The growth rates of vacancy islands and the rotation frequencies of double spirals are measured as a function of temperature, and the results are correlated with activation barriers of surface processes. Mass transport between the surface and bulk is shown to be unimportant.

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Modification of surface states in ultrathin films via hybridization with the substrate: a study of Ag on Ge.

The Shockley surface state of Ag(111) develops unusual band dispersion relations for Ag films of decreasing thicknesses on Ge(111), as observed by angle-resolved photoemission. Its parabolic dispersion in the thick-film limit shifts toward higher binding energies and splits into multiple bands with dispersions that reflect the valence band structure of Ge including the heavy-hole, light-hole, and split-off bands. The results are explained in terms of a hybridization interaction between the Ag surface state and the Ge substrate states.

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Controlling the thermal stability of thin films by interfacial engineering.

The quantized electronic structure in Pb films on Si(111) varies substantially as the film thickness increases. The changes in electronic energy cause the thermal stability of the films to oscillate with an approximate bilayer period. The phase of the oscillations can be controlled by interfacial engineering. Comparison of Pb films prepared on Si(111) terminated by In, Au, and Pb as interfactants reveals a phase reversal. For , films made of odd numbers of atomic layers (5, 7, and 9) are more stable than the even ones. This trend is reversed for the other two cases.

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Atomistic view of the recombinative desorption of H2 from H/Si(100).

Scanning tunneling microscopy is employed to investigate the recombinative desorption of H2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1 x 1), (3 x 1), and (2 x 1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3 x 1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.

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Breakup of quasiparticles in thin-film quantum wells.

Quantum well states in thin films are commonly described in terms of a quasiparticle confined in a quantum box, but this single-particle picture can fail dramatically near a substrate band edge, as shown by this angle-resolved photoemission study. Atomically uniform Ag films are prepared on Ge(111) to facilitate accurate line shape and dispersion relation measurements. A quantum well peak is observed to split into two peaks near the Ge valence band edge. The unusual line shapes are shown to be due to many-body interactions and are quantitatively explained by a Green's function calculation.

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Chemical tuning of metal-semiconductor interfaces.

We report a study of the Schottky barrier for Pb films grown on Si surfaces terminated by various metals (Ag, In, Au, and Pb) to explore the atomic-scale physics of the interface barrier and a means to control the barrier height. Electronic confinement by the Schottky barrier results in quantum well states in the Pb films, which are measured by angle-resolved photoemission. The barrier height is determined from the atomic-layer-resolved energy levels and the line widths. A calculation based on the known interface chemistry and the electronegativity yields predicted barrier heights in good agreement with the experiment.

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Quantum beating patterns observed in the energetics of Pb film nanostructures.

We have studied the nanoscale structural evolution of Pb films grown at 110 K on a Si(111) substrate as they are annealed to increasingly higher temperatures. Surface x-ray diffraction from a synchrotron source is used to observe the morphology evolve from an initial smooth film through various metastable states before reaching a state of local equilibrium, at which point the coverage of different height Pb structures is analyzed and related to the thickness-dependent surface energy. Rich patterns are seen in the resulting energy landscape similar to the beating patterns heard from the interference of two musical notes of similar pitch. The explanation is, however, very simple, as demonstrated by a model calculation based on the confinement of free electrons to a quantum well.

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Electronic-structure dependence of the electron-phonon interaction in Ag.

The linewidths of sp- and d-band derived electronic quantum-well states in thin films of Ag on Fe(100) are measured as a function of temperature to yield the electron-phonon coupling parameters. The results vary by a factor of up to 35 among the different states. The origin of these huge differences is traced to the decay path selection for the various initial states of the holes created by the photoemission process. The electron-phonon coupling parameter for the top d-band quantum-well state, 0.015+/-0.006, is the smallest ever reported.

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Quantum oscillations in the layer structure of thin metal films.

Understanding the underlying physical principles that determine the internal structure of objects at the atomic scale is critical for the advancement of nanoscale science. We have performed synchrotron x-ray diffraction studies to determine the structural properties of smooth Pb films with varying thicknesses of 6 to 18 monolayers deposited on a Si(111) substrate at 110 K. We observe quasibilayer variations in the atomic interlayer spacings of the films consistent with charge density oscillations due to quantum confinement of conduction electrons and surface-interface interference effects. Quantum oscillations in atomic step height are also deduced.

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Quantum melting of the charge-density-wave state in 1T-TiSe2.

We report a Raman scattering study of low-temperature, pressure-induced melting of the charge-density-wave (CDW) phase of 1T-TiSe2. Our measurements reveal that the collapse of the CDW state occurs in three stages: (i) For P<5 kbar, the pressure dependence of the CDW amplitude mode energies and intensities are indicative of a "crystalline" CDW regime; (ii) for 5 25 kbar, the absence of amplitude modes reveals a metallic regime in which the CDW has melted.

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Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation.

Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.

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Large electron-phonon coupling at an interface.

The strength of electron-phonon coupling in atomically uniform films of Ag on Fe is determined by angle-resolved photoemission from quantum well states in these films over a wide temperature range. As the film thickness is reduced, contributions from the surface and interface should become more important, and, experimentally, a large enhancement with superimposed quantum oscillations is observed. An analysis of the quantum oscillations indicates that this large enhancement is an interface effect.

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Electron-hole coupling and the charge density wave transition in TiSe2.

Angle-resolved photoemission is employed to measure the band structure of TiSe2 in order to clarify the nature of the ( 2 x 2 x 2) charge density wave transition. The results show a very small indirect gap in the normal phase transforming into a larger indirect gap at a different location in the Brillouin zone. Fermi surface topology is irrelevant in this case. Instead, electron-hole coupling together with a novel indirect Jahn-Teller effect drives the transition.

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The 13C-urea breath test to detect Helicobacter pylori infection: a validated simple methodology with 50 mg 13C-urea.

BACKGROUND: Several modifications of the 13C-urea breath test have been published. For reasons of cost efficiency and practicability, the urea dose and measurement duration should be reduced while still maintaining excellent diagnostic accuracy. AIMS: To establish a validated simple protocol for the urea breath test with 50 mg 13C-urea and to compare this protocol with the conventional urea breath test with 100 mg 13C-urea. METHODS: Conventional urea breath test with 100 mg 13C-urea was performed on 152 dyspeptic patients. Full-cream cow's milk was used as the test meal. Breath tests were repeated using 50 mg 13C-urea and the breath samples were collected at baseline and at 10 (protocol t10), 15 (protocol t15) and 30 min (protocol t30). Helicobacter pylori status was assessed by rapid urease test, histology and conventional urea breath test with 100 mg 13C-urea. RESULTS: With protocol t15, the best combination of sensitivity (99.1%), specificity (97.3%) and accuracy (98.7%) was obtained with a cut-off of 2.5 per thousand. There was an extremely high correlation coefficient between the three protocols and conventional 13C-urea breath test (all P < 0.001). CONCLUSIONS: A urea breath test with 50 mg 13C-urea using a simple test meal and a 15-min sampling interval with a low cut-off seems to be cost-effective and convenient. In a well-standardized laboratory, this modification is not associated with any loss of diagnostic accuracy.

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