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Biomedical subjects

R A Buhrman

Publications and source records attributed to R A Buhrman.

13 recordsLinked to original sources

Time-resolved spin-torque switching and enhanced damping in permalloy/Cu/permalloy spin-valve nanopillars.

We report time-resolved measurements of current-induced reversal of a free magnetic layer in Permalloy/Cu/Permalloy elliptical nanopillars at temperatures T=4.2 K to 160 K. Comparison of the data to Landau-Lifshitz-Gilbert macrospin simulations of the free layer switching yields numerical values for the spin torque and the Gilbert damping parameters as functions of T. The damping is strongly T dependent, which we attribute to the presence of an antiferromagnetic oxide layer around the perimeter of the Permalloy free layer. This adventitious antiferromagnetic oxide can have a major impact on spin-torque phenomena.

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Spin-transfer-driven ferromagnetic resonance of individual nanomagnets.

We demonstrate a technique that enables ferromagnetic resonance measurements of the normal modes for magnetic excitations in individual nanoscale ferromagnets, smaller in volume by more than a factor of 50 compared to individual ferromagnetic samples measured by other resonance techniques. Studies of the resonance frequencies, amplitudes, linewidths, and line shapes as a function of microwave power, dc current, and magnetic field provide detailed new information about the exchange, damping, and spin-transfer torques that govern the dynamics in magnetic nanostructures.

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Spin torque, tunnel-current spin polarization, and magnetoresistance in MgO magnetic tunnel junctions.

We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel barrier layers to investigate the relationship between spin transfer and tunnel magnetoresistance (TMR) under finite bias, and find that the spin torque per unit current exerted on the free layer decreases by < 10% over a bias range where the TMR decreases by > 40%. This is inconsistent with free-electron-like spin-polarized tunneling and reduced-surface-magnetism models of the TMR bias dependence, but is consistent with magnetic-state-dependent decay lengths in the tunnel barrier.

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Time-domain measurements of nanomagnet dynamics driven by spin-transfer torques.

We present time-resolved measurements of gigahertz-scale magnetic dynamics caused by torque from a spin-polarized current. By working in the time domain, we determined the motion of the magnetic moment throughout the process of spin-transfer-driven switching, and we measured turn-on times of steady-state precessional modes. Time-resolved studies of magnetic relaxation allow for the direct measurement of magnetic damping in a nanomagnet and prove that this damping can be controlled electrically using spin-polarized currents.

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Temperature dependence of spin-transfer-induced switching of nanomagnets.

We measure the temperature, magnetic-field, and current dependence for the switching of nanomagnets by a spin-polarized current. Depending on current bias, switching can occur between either two static magnetic states or a static state and a current-driven precessional mode. In both cases, the switching is thermally activated and governed by the sample temperature, not a higher effective magnetic temperature. The activation barriers for switching between static states depend linearly on current, with a weaker dependence for dynamic to static switching.

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Current-induced nanomagnet dynamics for magnetic fields perpendicular to the sample plane.

We present electrical measurements of high-frequency magnetic dynamics excited by spin-polarized currents in Co/Cu/Ni(80)Fe20 nanopillar devices, with a magnetic field applied perpendicular to the sample layers. As a function of current and magnetic field, the dynamical phase diagram contains several distinguishable precessional modes and also static magnetic states. Using detailed comparisons with numerical simulations, we provide rigorous tests of the theory of spin-transfer torques.

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Microwave oscillations of a nanomagnet driven by a spin-polarized current.

The recent discovery that a spin-polarized electrical current can apply a large torque to a ferromagnet, through direct transfer of spin angular momentum, offers the possibility of manipulating magnetic-device elements without applying cumbersome magnetic fields. However, a central question remains unresolved: what type of magnetic motions can be generated by this torque? Theory predicts that spin transfer may be able to drive a nanomagnet into types of oscillatory magnetic modes not attainable with magnetic fields alone, but existing measurement techniques have provided only indirect evidence for dynamical states. The nature of the possible motions has not been determined. Here we demonstrate a technique that allows direct electrical measurements of microwave-frequency dynamics in individual nanomagnets, propelled by a d.c. spin-polarized current. We show that spin transfer can produce several different types of magnetic excitation. Although there is no mechanical motion, a simple magnetic-multilayer structure acts like a nanoscale motor; it converts energy from a d.c. electrical current into high-frequency magnetic rotations that might be applied in new devices including microwave sources and resonators.

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Quantitative study of magnetization reversal by spin-polarized current in magnetic multilayer nanopillars.

We have studied magnetic switching by spin-polarized currents and also the magnetoresistance in sub-100-nm-diam thin-film Co/Cu/Co nanostructures, with the current flowing perpendicular to the plane of the films. By independently varying the thickness of all three layers and measuring the change of the switching currents, we test the theoretical models for spin-transfer switching. In addition, the changes in the switching current and magnetoresistance as a function of the Cu layer thickness give two independent measurements of the room-temperature spin-diffusion length in Cu.

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Thermally activated magnetic reversal induced by a spin-polarized current.

We have measured the statistical properties of magnetic reversal in nanomagnets driven by a spin-polarized current. Like reversal induced by a magnetic field, spin-transfer-driven reversal near room temperature exhibits the properties of thermally activated escape over an effective barrier. However, the spin-transfer effect produces qualitatively different behaviors than an applied magnetic field. We discuss an effective current vs field stability diagram. If the current and field are tuned so that their effects oppose one another, the magnet can exhibit telegraph-noise switching.

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Ultrathin aluminum oxide tunnel barriers.

Ballistic electron emission microscopy is used to study the formation of ultrathin tunnel barriers by the oxidization of aluminum. An O2 exposure, approximately 30 mTorr sec, forms a uniform tunnel barrier with a barrier height straight phi(b) of 1.2 eV. Greater O2 exposure does not alter straight phi(b) or the ballistic transmissivity of the oxide conduction band. Tunneling spectroscopy indicates a broad energy distribution of electronic states in the oxide. With increasing O2 dose the states below 1.2 eV gradually become localized, but until this localization is complete these states can provide low-energy single-electron channels through the oxide.

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Spintronics: a spin-based electronics vision for the future.

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

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Structure of superconducting thin films of YBa2Cu3O7-x grown on SrTiO3 and cubic zirconia.

Thin films of the superconductive oxide YBa2Cu3O7-x have been made by electron-beam coevaporation of the metals in an oxygen atmosphere onto single-crystal [001]-oriented SrTiO3 and yttria-stabilized zirconia (YSZ) substrates. The oxide films were superconducting in the as-deposited state (Tc = 81-83K, Jc = 10(6) A/cm2 at 4.2K). Bright-field imaging, selected-area diffraction (SAD), and high-resolution imaging in the transmission electron microscope were used to characterize the microstructure of these films. All of the films were polycrystalline. On SrTiO3 the films were oriented, for the most part, with [110] parallel to the substrate surface. On YSZ, two microstructures were observed: one with smaller rectangular grains oriented with (100) or (010) parallel to the substrate surface and the other with (001) parallel to the surface (i.e., c-axis up).

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