Dynamical or landau instability?
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Biomedical subjects
Qian Niu
Publications and source records attributed to Qian Niu.
Quantum tweezer for atoms.
We propose a quantum tweezer for extracting a desired number of neutral atoms from a reservoir. A trapped Bose-Einstein condensate is used as the reservoir, taking advantage of its coherent nature, which can guarantee a constant outcome. The tweezer is an attractive quantum dot, which may be generated by red-detuned laser light. By moving at certain speeds, the dot can extract a desired number of atoms from the condensate through Landau-Zener tunneling. The feasibility of our quantum tweezer is demonstrated through realistic and extensive model calculations.
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Anomalous Hall effect in ferromagnetic semiconductors.
We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.
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Controlled generation of dark solitons with phase imprinting.
The generation of dark solitons in Bose-Einstein condensates with phase imprinting is studied by mapping it into the classic problem of a damped driven pendulum. We provide a simple but powerful scheme, designing the phase imprint for various desired outcomes of soliton generation. For a given phase step, we derive a formula for the number of dark solitons traveling in each direction, and examine the physics behind the generation of counterpropagating dark solitons.
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Quantitative determination of the metastability of flat Ag overlayers on GaAs(110).
Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.
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