Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wells.
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Biomedical subjects
PO Holtz
Publications and source records attributed to PO Holtz.
Electronic structure of a shallow acceptor confined in a GaAs/AlxGa1-xAs quantum well.
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Mercury-related luminescent center in silicon.
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Excited 2s state of a donor confined in a GaAs/AlxGa1-xAs quantum well.
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Optical investigation of Fermi-edge singularities in Al0.35Ga0.65As/GaAs heterostructures.
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Dependence of the binding energy of the acceptor on its position in a GaAs/AlxGa1-xAs quantum well.
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Decay measurements of free- and bound-exciton recombination in doped GaAs/AlxGa1-xAs quantum wells.
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Time-resolved measurements of the radiative recombination in GaAs/AlxGa1-xAs heterostructures.
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Energy-level structure of two-dimensional electrons confined at the AlxGa1-xAs/GaAs interface studied by photoluminescence excitation spectroscopy.
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Enhancement of the free-to-bound transition in narrow GaAs/Al0.3Ga0.7As quantum wells via a possible excitonic Auger mechanism.
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Spectroscopic study of the effect of confinement on shallow acceptor states in GaAs/AlxGa1-xAs quantum wells.
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Observation of the acceptor-bound exciton confined in narrow GaAs/AlxGa1-xAs quantum wells in photoluminescence excitation.
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Spectroscopic study of an acceptor confined in a narrow GaAs/AlxGa1-xAs quantum well.
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Optical anisotropy in a quantum-well-wire array with two-dimensional quantum confinement.
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Electronic structure of the 2.3149-eV complex defect in Ag-doped ZnTe.
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Electronic structure of the 1.429-eV complex neutral defect in GaAs from tunable-dye-laser spectroscopy.
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Electronic structure of a neutral Cu-related complex defect with a bound exciton at 2.3296 eV in ZnTe.
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Electronic properties of a complex Cu-related acceptor with a bound exciton at 2.3423 eV in ZnTe.
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