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Biomedical subjects

P Avouris

Publications and source records attributed to P Avouris.

At least 19 recordsLinked to original sources

Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers--the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.

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Engineering carbon nanotubes and nanotube circuits using electrical breakdown.

Carbon nanotubes display either metallic or semiconducting properties. Both large, multiwalled nanotubes (MWNTs), with many concentric carbon shells, and bundles or "ropes" of aligned single-walled nanotubes (SWNTs), are complex composite conductors that incorporate many weakly coupled nanotubes that each have a different electronic structure. Here we demonstrate a simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes. We can remove shells of MWNTs stepwise and individually characterize the different shells. By choosing among the shells, we can convert a MWNT into either a metallic or a semiconducting conductor, as well as directly address the issue of multiple-shell transport. With SWNT ropes, similar selectivity allows us to generate entire arrays of nanoscale field-effect transistors based solely on the fraction of semiconducting SWNTs.

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Current saturation and electrical breakdown in multiwalled carbon nanotubes.

We investigate the limits of high energy transport in multiwalled carbon nanotubes (MWNTs). In contrast to metal wires, MWNTs do not fail in the continuous, accelerating manner typical of electromigration. Instead, they fail via a series of sharp, equally sized current steps. We assign these steps to the sequential destruction of individual nanotube shells, consistent with the MWNT's concentric-shell geometry. Furthermore, the initiation of this failure is very sensitive to air exposure. In air failure is initiated by oxidation at a particular power, whereas in vacuum MWNTs can withstand much higher power densities and reach their full current carrying capacities.

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Intertube coupling in ropes of single-wall carbon nanotubes

We investigate the coupling between individual tubes in a rope of single-wall carbon nanotubes using four probe resistance measurements. By introducing defects through the controlled sputtering of the rope we generate a strong nonmonotonic temperature dependence of the four terminal resistance. This behavior reflects the interplay between localization in the intentionally damaged tubes and coupling to undamaged tubes in the same rope. Using a simple model we obtain the coherence length and the coupling resistance. The coupling mechanism is argued to involve direct tunneling between tubes.

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Metal-semiconductor nanocontacts: silicon nanowires

Silicon nanowires assembled from clusters or etched from the bulk, connected to aluminum electrodes and passivated, are studied with large-scale local-density-functional simulations. Short ( approximately 0.6 nm) wires are fully metallized by metal-induced gap states resulting in finite conductance ( approximately e(2)/h). For longer wires ( approximately 2.5 nm) nanoscale Schottky barriers develop with heights larger than the corresponding bulk value by 40% to 90%. Electric transport requires doping dependent gate voltages with the conductance spectra exhibiting interference resonances due to scattering of ballistic channels by the contacts.

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Electrical transport in rings of single-wall nanotubes: one-dimensional localization

We report low-temperature magnetoresistance (MR) measurements on rings of single-wall carbon nanotubes. Negative MR characteristic of weak one-dimensional localization is clearly observed from 3.0 to 60 K, and the coherence length L(varphi) is obtained as a function of temperature. The dominant dephasing mechanism is identified as electron-electron scattering. Below 1 K, we observe a transition from weak to strong localization, and below 0.7 K a weak antilocalization is induced by spin-orbit scattering.

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Carbon-atom wires: charge-transfer doping, voltage drop, and the effect of distortions

We present first-principles calculations on electrical conduction through carbon atomic wires. The changes in charge distribution induced by a large bias exhibit the primary involvement of the wire's pi states. A significant fraction ( approximately 40%) of the voltage drops across the atomic wire itself. At zero bias, there is a large transfer of charge from the electrodes to the wire, effectively providing doping without introducing scattering centers. This transfer leads, however, to potential barriers at the wire-electrode junctions. Bending the wire reduces its conductance.

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