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Mercouri G Kanatzidis

Publications and source records attributed to Mercouri G Kanatzidis.

At least 19 recordsLinked to original sources

Heavy-metal-ion capture, ion-exchange, and exceptional acid stability of the open-framework chalcogenide (NH(4))(4)In(12)Se(20).

The hydrothermal synthesis of the purely inorganic open-framework indium selenide (NH(4))(4)In(12)Se(20) (1) is reported. Compound 1 exhibits a unique three-dimensional open-framework structure. The framework of 1 shows an unusual, for a chalcogenide compound, rigidity arising from the unprecedented connection mode of its building blocks. Compound 1 possesses ion exchange capacity for Cs(+), Rb(+), NH(4) (+), but it has selectivity against Na(+) and Li(+). It also showed exceptional stability in relatively concentrated hydrochloric acid. Ion exchange of 1 with hydrochloric water solutions can produce its solid acid analogue H(2)(NH(4))(2)In(12)Se(20). The maximum cation-exchange capacity of 1 was found equal to two equivalents per mol, which is consistent with an exchange mechanism taking place in the 1D-channels formed by the largest cavities. In addition, 1 can do ion-exchange with heavy-metal ions like Hg(2+), Pb(2+), and Ag(+). The capacity of 1 to clean water solutions from heavy-metal ions was preliminarily investigated and found very high. Specifically, 1 can remove 99.9 % of Hg(2+), 99.8 % of Ag(+), and 94.9 % of Pb(2+) from aqueous solutions of each of these ions. Using different synthetic conditions, we isolated compound (NH(4))(2)In(12)Se(19) (2), which also has as good an acid stability as 1, but no ion-exchange properties. Overall, this work provides new hydrothermal synthetic approaches for isolation of all-inorganic open-framework chalcogenides.

Journal Article↗

Nanostructures versus solid solutions: low lattice thermal conductivity and enhanced thermoelectric figure of merit in Pb9.6Sb0.2Te10-xSex bulk materials.

The series of Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x) compounds with different Se content (x) were prepared, and their structure was investigated at the atomic and nanosized regime level. Thermoelectric properties were measured in the temperature range from 300 to 700 K. The Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x) series was designed after the refinement of the single-crystal structure of Pb(3.82)Sb(0.12)Te(4) (Pb(9.6)Sb(0.3)Te(10); S.G. Pmm) by substituting isoelectronically in anion positions Te by Se. The Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x)() compounds show significantly lower lattice thermal conductivity (kappa(L)) compared to the well-known PbTe(1)(-)(x)Se(x) solid solutions. For Pb(9.6)Sb(0.2)Te(3)Se(7) (x = 7), a kappa(L) value as low as 0.40 W/m.K was determined at 700 K. High-resolution transmission electron microscopy of several Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x) samples showed widely distributed Sb-rich nanocrystals in the samples which is the key feature for the strong reduction of the lattice thermal conductivity. The reduction of kappa(L) results in a significantly enhanced thermoelectric figure of merit of Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x) compared to the corresponding PbTe(1)(-)(x)Se(x) solid solution alloys. For Pb(9.6)Sb(0.2)Te(3)Se(7) (x = 7), a maximum figure of merit of ZT approximately 1.2 was obtained at approximately 650 K. This value is about 50% higher than that of the state-of-the-art n-type PbTe. The work provides experimental validation of the theoretical concept that embedded nanocrystals can promote strong scattering of acoustic phonons.

Journal Article↗

Indium flux synthesis of RE4Ni2InGe4 (RE = Dy, Ho, Er, and Tm): an ordered quaternary variation on the binary phase Mg5Si6.

The quaternary compounds RE4Ni2InGe4 (RE = Dy, Ho, Er, and Tm) were obtained as large single crystals in high yields from reactions run in liquid In. The title compounds crystallize in the monoclinic C2/m space group with the Mg(5)Si(6) structure type with lattice parameters a = 15.420(2) A, b = 4.2224(7) A, c = 7.0191(11) A, and beta = 108.589(2) degrees for Dy4Ni2InGe4, a = 15.373(4) A, b = 4.2101(9) A, c = 6.9935(15) A, and beta = 108.600(3) degrees for Ho4Ni2InGe4, a = 15.334(7) A, b = 4.1937(19) A, c = 6.975(3) A, and beta =108.472(7) degrees for Er4Ni2InGe4, and a = 15.253(2) A, b = 4.1747(6) A, c = 6.9460(9) A, and beta = 108.535(2) degrees for Tm4Ni2InGe4. RE4Ni2InGe4 formed in liquid In from a melt that was rich in the rare-earth component. These compounds are polar intermetallic phases with a cationic rare-earth substructure embedded in a transition metal and main group matrix. The rare-earth atoms form a highly condensed network, leading to interatomic distances that are similar to those found in the elemental lanthanides themselves. The Dy and Ho analogues display two maxima in the susceptibility, suggesting antiferromagnetic ordering behavior and an accompanying spin reorientation. The Er analogue shows only one maximum in the susceptibility, and no magnetic ordering was observed for the Tm compound down to 2 K.

Journal Article↗

Hexagonal mesoporous germanium.

The blending of mesoporosity with the properties of semiconductors promises new types of multifunctional nanomaterials. It would be particularly interesting to combine the shape selectivity of a mesoporous oxide with the electronic and photonic characteristics of a useful semiconductor. We demonstrated the synthesis of a mesoporous germanium semiconductor using liquid-crystals-templated chemistry. The template removal was achieved by a two-step ion-exchange thermal procedure. This semiconductive mesoporous form of germanium possesses hexagonal pore ordering with very high surface area and exhibits strongly size-dependent optical properties as well as photoluminescence.

Journal Article↗

Unique pore selectivity for Cs+ and exceptionally high NH4+ exchange capacity of the chalcogenide material K6Sn[Zn4Sn4S17].

Highly selective ion-exchange properties and -exchange capacities of the open framework chalcogenide material K(6)Sn[Zn(4)Sn(4)S(17)] (1) with Cs(+) and NH(4)(+) are reported. Because the structure of this framework is known in great detail, these studies are a rare example where structure/property relationships can be directly drawn. 1 possesses three types of micropore cavities. The largest pore of 1 presents an exact fit for Cs(+) and exhibits high selectivity for this ion, as demonstrated by competitive ion-exchange experiments. The next largest pore has a greater capacity (up to four cations) and is well suited for NH(4)(+) ions. This leads to a high ammonium-exchange capacity for 1 of 3.06 mequiv/gr, which is close to the NH(4)(+)-exchange capacities of natural zeolites. The single-crystal structures of ammonium-exchanged products at various stages reveal an unusual mechanism for the exchange process of 1 which involves diffusion of ammonium cations from the large cavity to the small ones of the framework. Thermal analysis of one of these ammonium-exchanged products, in combination with mass spectroscopy, showed the decomposition of NH(4)(+) cations to NH(3) and H(2)S with the parallel transformation of the exchanged product to a mixture of crystalline phases. Since K(6)Sn[Zn(4)Sn(4)S(17)] can be grown in suitably large crystals (much larger than most zeolites), it defines an excellent model system in which ion-exchange processes and products can be characterized and studied in detail in various reaction stages.

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Structurally complex cobalt intermetallics grown from liquid aluminum: Co19Al45Si(10-x) (x = 0.13) and Co5Al14Si2.

The cobalt aluminum silicides Co19Al45Si(10-x) (x = 0.13) and Co5Al14Si2 were synthesized in liquid aluminum and characterized by single-crystal X-ray diffraction. Co19Al45Si(10-x) (x = 0.13) crystallizes in the monoclinic space group C2/c with lattice parameters a = 19.991(2) A, b = 19.143(2) A, c = 12.8137(15) A, beta = 123.583(2) degrees. Co5Al14Si2 adopts the orthorhombic space group Pnma with cell parameters a = 13.8948(19) A, b = 23.039(3) A, c = 7.3397(10) A. Both structures are exceptionally complex with the Co2Si2 rhombus being a common building motif. The coordination environments of cobalt atoms resemble those of the transition metals in typical quasi-crystal approximants. Co5Al14Si2 shows oxidation resistance in air up to 1000 degrees C by forming a dense-packed Al2O3 layer on the surface of the crystal.

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Mesostructured germanium with cubic pore symmetry.

Regular mesoporous oxide materials have been widely studied and have a range of potential applications, such as catalysis, absorption and separation. They are not generally considered for their optical and electronic properties. Elemental semiconductors with nanopores running through them represent a different form of framework material with physical characteristics contrasting with those of the more conventional bulk, thin film and nanocrystalline forms. Here we describe cubic mesostructured germanium, MSU-Ge-1, with gyroidal channels containing surfactant molecules, separated by amorphous walls that lie on the gyroid (G) minimal surface as in the mesoporous silica MCM-48 (ref. 2). Although Ge is a high-melting, covalent semiconductor that is difficult to prepare from solution polymerization, we succeeded in assembling a continuous Ge network using a suitable precursor for Ge(4-) atoms. Our results indicate that elemental semiconductors from group 14 of the periodic table can be made to adopt mesostructured forms such as MSU-Ge-1, which features two three-dimensional labyrinthine tunnels obeying Ia3d space group symmetry and separated by a continuous germanium minimal surface that is otherwise amorphous. A consequence of this new structure for germanium, which has walls only one nanometre thick, is a wider electronic energy bandgap (1.4 eV versus 0.66 eV) than has crystalline or amorphous Ge. Controlled oxidation of MSU-Ge-1 creates a range of germanium suboxides with continuously varying Ge:O ratio and a smoothly increasing energy gap.

Letter↗

[P6Se12]4-: a phosphorus-rich selenophosphate with low-valent P centers.

The new selenophosphate Rb4P6Se12 features the trans-decalin-like, [P6Se12]4- anion, a phosphorus-rich species that possesses three parallel P-P bonds and formally P2+ and P4+ centers. The synthesis of Rb4P6Se12 was accomplished with the reductive addition of P to RbPSe6 and represents an interesting example of how alkali chalcophosphates can serve as starting materials to produce new compounds under mild reaction conditions.

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A new chalcogenide homologous series A2[M(5+n)Se(9+n)] (A = Rb, Cs; M = Bi, Ag, Cd).

The ternary and quaternary selenides, beta-CsBi3Se5, Rb2CdBi6Se11, CsAg(0.5)Bi(3.5)Se6, CsCdBi3Se6, Rb2Ag(1.5)Bi(7.5)Se13, and Cs2Ag(1.5)Bi(7.5)Se13, are all members of the new homologous series A2[M(5+n)Se(9+n)] and crystallize in structures related to each other in a systematic way; these compounds are mid gap semiconductors and are of interest as thermoelectric materials.

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Intermetallic compounds with near Zintl phase behavior: RE2Zn3Ge6 (RE = La, Ce, Pr, Nd) grown from liquid indium.

A series of compounds has been discovered while investigating reactions of rare earth, transition metals, and Ge in excess indium. These compounds, RE2Zn3Ge6 (RE = La, Ce, Pr, Nd), are isostructural, crystallizing in the orthorhombic space group Cmcm with lattice parameters a = 5.9691(9) angstroms, b = 24.987(4) angstroms, and c = 5.9575(9) angstroms for La2Zn3Ge6, a = 5.9503(5) angstroms, b = 24.761(2) angstroms, and c = 5.9477(5) angstroms for the Ce analogue, a =5.938(2) angstroms, b = 24.708(8) angstroms, and c = 5.936(2) angstroms for Pr2Zn3Ge6, and a = 5.9094(7) angstroms, b = 24.619(3) angstroms, and c = 5.9063(5) angstroms for the Nd analogue. The structure is composed of PbO-like ZnGe layers and ZnGe4 cage layers and is related to the Ce4Zn8Ge(11-x) structure type. The bonding in the system can be rationalized using the Zintl concept resulting in a material that is expected to be a valence precise semiconductor, although its behavior is more consistent with it being a semimetal, making it an intermediate case. The results of band structure calculations and magnetic measurements of these compounds are discussed.

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The metal flux: a preparative tool for the exploration of intermetallic compounds.

This review highlights the use and great potential of liquid metals as exotic and powerful solvents (i.e. fluxes) for the synthesis of intermetallic phases. The results presented demonstrate that considerable advances in the discovery of novel and complex phases are achievable utilizing molten metals as solvents. A wide cross-section of examples of flux-grown intermetallic phases and related solids are discussed and a brief history of the origins of flux chemistry is given. The most commonly used metal fluxes are surveyed and where possible, the underlying principal reasons that make the flux reaction work are discussed.

Alloys↗

On the lamellar compounds CuBiP(2)Se(6), AgBiP(2)Se(6) and AgBiP(2)S(6). Antiferroelectric phase transitions due to cooperative Cu(+) and Bi(3+) ion motion.

CuBiP(2)Se(6), AgBiP(2)Se(6), and AgBiP(2)S(6) were prepared from the corresponding elements. CuBiP(2)Se(6) and AgBiP(2)Se(6) crystallize in the space group R with a = 6.5532(16) A and c = 39.762(13) A for CuBiP(2)Se(6) and a = 6.6524(13) A and c = 39.615(15) A for AgBiP(2)Se(6). AgBiP(2)S(6) crystallizes in the triclinic space group P with a = 6.3833(13) A, b = 7.1439(14) A, c = 9.5366(19) A, alpha = 91.89(3) degrees , beta = 91.45(3) degrees , gamma = 94.05(3) degrees . CuBiP(2)Se(6) was found to exhibit a temperature-dependent antiferroelectric ordering of the Cu(+) and Bi(3+) ions in the lattice. An intermediate and a fully ordered structure were refined at 173 and 97 K, respectively. Electronic band and total energy calculations at the DFT level clearly suggest that the antiferroelectric model is energetically favored over the paraelectric and hypothetical ferrielectric models. This phase transition can be classified as a second-order Jahn-Teller distortion. The antiferroelectric state of CuBiP(2)Se(6) is an indirect gap semiconductor. The compounds were characterized with differential thermal analysis and solid-state UV/vis diffuse reflectance spectroscopy. Generalized implications regarding the expected ferroelectric behavior of compounds in the CuMP(2)Se(6) system (M = trivalent metal) are discussed.

Bismuth↗