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Biomedical subjects

M L Roukes

Publications and source records attributed to M L Roukes.

4 recordsLinked to original sources
PubMed2003

Giant planar Hall effect in epitaxial (Ga,Mn)as devices.

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Journal Article↗
PubMed2002

Probe--sample coupling in the magnetic resonance force microscope.

The magnetic resonance force microscope (MRFM) provides a route to achieving scanned probe magnetic resonance imaging with extremely high spatial resolution. Achieving this capability will require understanding the force exerted on a microscopic magnetic probe by a spatially extended sample over which the probe is scanned. Here we present a detailed analysis of this interaction between probe and sample. We focus on understanding the situation where the micromagnet mounted on the mechanical resonator generates a very inhomogeneous magnetic field and is scanned over a sample with at least one spatial dimension much larger than that of the micromagnet. This situation differs quite significantly from the conditions under which most MRFM experiments have been carried out where the sample is mounted on the mechanical resonator and placed in a rather weak magnetic field gradient. In addition to the concept of a sensitive slice (the spatial region where the magnetic resonance condition is met) it is valuable to map the forces exerted on the probe by spins at various locations; this leads to the concept of the force slice (the region in which spins exert force on the resonator). Results of this analysis, obtained both analytically and numerically, will be qualitatively compared with an initial experimental finding from an EPR-MRFM experiment carried out on DPPH at 4 K.

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PubMed2001

Spintronics: a spin-based electronics vision for the future.

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

Journal Article↗