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Biomedical subjects

Keith R Lykke

Publications and source records attributed to Keith R Lykke.

4 recordsLinked to original sources

Simple spectral stray light correction method for array spectroradiometers.

A simple, practical method has been developed to correct a spectroradiometer's response for measurement errors arising from the instrument's spectral stray light. By characterizing the instrument's response to a set of monochromatic laser sources that cover the instrument's spectral range, one obtains a spectral stray light signal distribution matrix that quantifies the magnitude of the spectral stray light signal within the instrument. By use of these data, a spectral stray light correction matrix is derived and the instrument's response can be corrected with a simple matrix multiplication. The method has been implemented and validated with a commercial CCD-array spectrograph. Spectral stray light errors after the correction was applied were reduced by 1-2 orders of magnitude to a level of approximately 10(-5) for a broadband source measurement, equivalent to less than one count of the 15-bit-resolution instrument. This method is fast enough to be integrated into an instrument's software to perform real-time corrections with minimal effect on acquisition speed. Using instruments that have been corrected for spectral stray light, we expect significant reductions in overall measurement uncertainties in many applications in which spectrometers are commonly used, including radiometry, colorimetry, photometry, and biotechnology.

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Stability of photodiodes under irradiation with a 157-nm pulsed excimer laser.

We have measured the stability of a variety of photodiodes exposed to 157-nm light from a pulsed excimer laser by using a radiometry beamline at the Synchrotron Ultraviolet Radiation Facility at the National Institute of Standards and Technology. The intense, pulsed laser light exposed the photodiodes, whereas the low-intensity, continuously tunable light from the synchrotron source measured changes in the characteristics of the photodiodes, such as in the responsivity and the reflectance from the surface of a photodiode. Photodiodes studied include both silicon pn-junction and Schottky-barrier types. Among these photodiodes, we found that the damage mechanism for photodiodes with SiO2-based passivating layers is mainly the buildup of SiO2-Si interface trap states. The interface trap state buildup is well known for other semiconductor devices and is generally recognized as a product induced by radiation with an energy more than the 9-eV SiO2 bandgap energy rather than the 7.9-eV energy of the 157-nm radiation. Based on the generation of interface trap states, a model is proposed to describe the dependence of detector responsivity on exposure to 157-nm radiation. We also observed slow recovery in some of the damaged photodiodes, confirming that some of the interface trap states are only semipermanent. Radiation damage induced by low-power continuous 157-nm synchrotron light was also studied. As for the other photodiodes with no SiO2 layers, measurement results support the assumption that the changes in responsivity are due mainly to the deposition of thin layers on the tops of the detectors during laser irradiation.

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Quantum yield of the iodide-iodate chemical actinometer: dependence on wavelength and concentrations.

The quantum yield (QY) of the iodide-iodate chemical actinometer (0.6 M KI-0.1 M KIO3) was determined for irradiation between 214 and 330 nm. The photoproduct, triiodide, was determined from the increase in absorbance at 352 nm, which together with a concomitant measurement of the UV fluence enabled the QY to be calculated. The QY at 254 nm was determined to be 0.73 +/- 0.02 when calibration was carried out against a National Institute of Standards and Technology traceable radiometer or photometric device. At wavelengths below 254 nm the QY increased slightly, leveling off at -0.80 +/- 0.05, whereas above 254 nm the QY decreases linearly with wavelength, reaching a value of 0.30 at 284 nm. In addition, the QY was measured at different iodide concentrations. There is a slight decrease in QY going from 0.6 to 0.15 M KI, whereas below 0.15 M KI the QY drops off sharply, decreasing to 0.23 by 0.006 M KI. Calibration of the QY was also done using potassium ferrioxalate actinometry to measure the irradiance. These results showed a 20% reduction in QY between 240 and 280 nm as compared with radiometry. This discrepancy suggests that the QY of the ferrioxalate actinometer in this region of the spectrum needs reexamination.

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Characterization of an ultraviolet and a vacuum-ultraviolet irradiance meter with synchrotron radiation.

We have constructed and characterized a simple probe that is suitable for accurate measurements of irradiance in the UV to the vacuum UV spectral range. The irradiance meter consists of a PtSi detector located behind a 5-mm-diameter aperture. The probe was characterized at various wavelengths ranging from 130 to 320 mm by use of continuously tunable synchrotron radiation from the Synchrotron Ultra-violet Radiation Facility III. We determined the irradiance responsivity by scanning a small monochromatic beam over the active area of the irradiance meter and measuring its response on a grid with regular spacing. The angular response was also determined and shown to be suitable for applications such as photolithography. In addition, we studied the radiation damage using a 157-nm excimer laser and found that the irradiance meter can endure more than 100 J/cm2 of 157-nm radiation before a noticeable change occurs in its responsivity. Many industrial applications such as UV curing, photolithography, or semiconductor chip fabrication that require accurate measurement of the irradiance would benefit from having such a stable, accurate LTV irradiance meter.

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