Exchange reaction, clustering, and surface segregation at the Al/InSb(110) interface.
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Biomedical subjects
JH Weaver
Publications and source records attributed to JH Weaver.
Atom profiles of interfaces with polar-angle-dependent photoemission: Au/GaAs(100).
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Evolution of a surface state into an interface state: A probe of the buried epitaxial Cr/Au(100) interface.
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Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formation.
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High-resolution photoemission study of Co/Si(111) interface formation.
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Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82).
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Medium-energy backscattered electron diffraction as a probe of elastic strain in epitaxial overlayers.
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Growth of metastable fcc Co on Ni(001).
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Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures.
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Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8 x 2).
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Asymmetries in atomic intermixing at Au/Ge and Ge/Au interfaces.
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Soft-x-ray photoemission study of Cr-Ge intermixing on crystalline and amorphous Ge surfaces.
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Incident beam effects in angle-resolved Auger electron spectroscopy.
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High-temperature nucleation and silicide formation at the Co/Si(111)-7 x 7 interface: A structural investigation.
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Comparative study of the formation of Cr/Ge and Ge/Cr thin-film interfaces.
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Interdiffusion and reaction at the Fe/GaAs(110) interface.
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Quantitative model of reactive metal-semiconductor interface growth using high-resolution photoemission results.
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Photoemission study of the development of the Ti/GaAs(110) interface.
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