Erratum: Au-GaAs(110) interface: Photoemission studies of the effects of temperature
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Biomedical subjects
I Lindau
Publications and source records attributed to I Lindau.
Bonding characteristics of the sqrt 3
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Microscopic metal clusters and Schottky barrier formation.
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Overlayer-cation reaction at the Pt/Hg1-xCdxTe interface.
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Au-GaAs(110) interface: Photoemission studies of the effects of temperature.
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Effect of different cation-anion bond strengths on metal-ternary-semiconductor interface formation: Cu/Hg0.75Cd0.25Te and Cu/CdTe.
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Photoemission spectroscopy of Yb3Si5 and its connection with Si-Yb interfaces.
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Initial stage of thermal oxidation of the Si(111)-(7 x 7) surface.
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Soft-x-ray photoemission study of Co-n-type InP(110) interface.
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Binding-energy shifts from alloying at metal-compound-semiconductor interfaces.
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Electronic structure of the Yb/Ge(111) interface.
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Possibility of incongruous interface behavior of In on GaAs(110).
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Solid-state effects in photoionization cross sections of d states: Comparison between MoS2 and Mo.
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Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfaces.
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Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110).
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Spectroscopic evidence for the 5f Coulomb interaction in UAl2 and UPt3.
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Growth, chemical interaction, and Schottky-barrier formation of column-III metal overlayers on InP(110).
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