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Biomedical subjects

Hongjie Dai

Publications and source records attributed to Hongjie Dai.

36 records · Page 2Linked to original sources
PubMed2005

Measurement of ionizing radiation using carbon nanotube field effect transistor.

Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.

Electrons↗
PubMed2005

Suspended carbon nanotube quantum wires with two gates.

Suspended single-walled carbon nanotube devices comprised of high-quality electrical contacts and two electrostatic gates per device have been prepared. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis related to environmental factors and act as cleaner Fabry-Perot interferometers or single-electron transistors. The high-field saturation currents in the suspended nanotubes related to optical phonon or zone-boundary phonon scattering are significantly lower due to the lack of efficient heat sinking. The multiple-gate design may also facilitate future investigations into the electromechanical properties of nanotube quantum systems.

Electron Transport↗
PubMed2005

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.

Short channel ( approximately 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-kappa gate dielectrics (ALD HfO(2)) are obtained. For nanotubes with diameter approximately 1.6 nm and band gap approximately 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70 mV/decade, negligible ambipolar conduction, and high on/off ratios up to 10(6) at a bias voltage of 0.5 V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.

Crystallization↗
PubMed2004

Aharonov-Bohm interference and beating in single-walled carbon-nanotube interferometers.

Relatively low magnetic fields applied parallel to the axis of a chiral single-walled carbon nanotube are found causing large modulations to the p channel or valence band conductance of the nanotube in the Fabry-Perot interference regime. Beating in the Aharonov-Bohm type of interference between two field-induced nondegenerate subbands of spiraling electrons is responsible for the observed modulation with a pseudoperiod much smaller than that needed to reach the flux quantum Phi0 = h/e through the nanotube cross section. We show that single-walled nanotubes represent the smallest cylinders exhibiting the Aharonov-Bohm effect with rich interference and beating phenomena arising from well-defined molecular orbitals reflective of the nanotube chirality.

Journal Article↗
PubMed2004

Miniature organic transistors with carbon nanotubes as quasi-one-dimensional electrodes.

As the dimensions of electronic devices approach those of molecules, the size, geometry, and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon nanotubes (SWNT) can be used as quasi-one-dimensional (1D) electrodes to construct organic field effect transistors (FET) with molecular scale width ( approximately 2 nm) and channel length (1-3 nm). An important feature owing to the quasi-1D electrode geometry is the favorable gate electrostatics that allows for efficient switching of ultra-short organic channels. This affords room temperature conductance modulation by orders of magnitude for organic transistors that are only several molecules in length, with switching characteristics superior to similar devices with lithographically patterned metal electrodes. With nanotubes, covalent carbon-carbon bonds could be utilized to form contacts to molecular materials. The unique geometrical, physical, and chemical properties of carbon nanotube electrodes may lead to various interesting molecular devices.

Journal Article↗
PubMed2004

Surface chemistry and electrical properties of germanium nanowires.

Germanium nanowires (GeNWs) with p- and n-dopants were synthesized by chemical vapor deposition (CVD) and were used to construct complementary field-effect transistors (FETs). Electrical transport and X-ray photoelectron spectroscopy (XPS) data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Large hysteresis due to water molecules strongly bound to GeO(2) on GeNWs is revealed. Different oxidation behavior and hysteresis characteristics and opposite band bending due to Fermi level pinning by interface states between Ge and surface oxides are observed for p- and n-type GeNWs. Vacuum annealing above 400 degrees C is used to remove surface oxides and eliminate hysteresis in GeNW FETs. High-kappa dielectric HfO(2) films grown on clean GeNW surfaces by atomic layer deposition (ALD) using an alkylamide precursor is effective in serving as the first layer of surface passivation. Lastly, the depletion length along the radial direction of nanowires is evaluated. The result suggests that surface effects could be dominant over the "bulk" properties of small diameter wires.

Journal Article↗
PubMed2004

Ten- to 50-nm-long quasi-ballistic carbon nanotube devices obtained without complex lithography.

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths of approximately 10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths of approximately 10 nm, near the mean free path of l(op) approximately 15 nm for optical phonon scattering, exhibit nearly ballistic transport at high biases and can carry unprecedented 100-microA currents per tube. Semiconducting SWCNT field-effect transistors with approximately 50-nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs.

Journal Article↗
PubMed2004

Nanotube molecular transporters: internalization of carbon nanotube-protein conjugates into Mammalian cells.

The interactions between various functionalized carbon nanotubes and several types of human cancer cells are explored. We have prepared modified nanotubes and have shown that these can be derivatized in a way that enables attachment of small molecules and of proteins, the latter through a novel noncovalent association. The functionalized carbon nanotubes enter nonadherent human cancer cells as well as adherent cell lines (CHO and 3T3) and by themselves are not toxic. While the fluoresceinated protein streptavidin (MW approximately 60 kD) by itself does not enter cells, it readily enters cells when complexed to a nanotube-biotin transporter and exhibits dose-dependent cytotoxicity. The uptake pathway is consistent with adsorption-mediated endocytosis. The use of carbon nanotubes as molecular transporters could be exploited for various cargos. The biocompatibility and unique physical, electrical, optical, and mechanical properties of nanotubes provide the basis for new classes of materials for drug, protein, and gene delivery applications.

Animals↗
PubMed2004

High-field quasiballistic transport in short carbon nanotubes.

Single walled carbon nanotubes with Pd Ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean-free path (MFP) for acoustic phonon scattering is estimated to be l(ap) approximately 300 nm, and that for optical phonon scattering is l(op) approximately 15 nm. Transport through very short (approximately 10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasiballistic at the low- and high-bias voltage limits, respectively. High currents of up to 70 microA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects.

Journal Article↗
PubMed2004

An investigation of the mechanisms of electronic sensing of protein adsorption on carbon nanotube devices.

It has been reported that protein adsorption on single-walled carbon nanotube field effect transistors (FETs) leads to appreciable changes in the electrical conductance of the devices, a phenomenon that can be exploited for label-free detection of biomolecules with a high potential for miniaturization. This work presents an elucidation of the electronic biosensing mechanisms with a newly developed microarray of nanotube "micromat" sensors. Chemical functionalization schemes are devised to block selected components of the devices from protein adsorption, self-assembled monolayers (SAMs) of methoxy(poly(ethylene glycol))thiol (mPEG-SH) on the metal electrodes (Au, Pd) and PEG-containing surfactants on the nanotubes. Extensive characterization reveals that electronic effects occurring at the metal-nanotube contacts due to protein adsorption constitute a more significant contribution to the electronic biosensing signal than adsorption solely along the exposed lengths of the nanotubes.

Adsorption↗
PubMed2003

Ballistic carbon nanotube field-effect transistors.

A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube--metal junctions. These energy barriers severely limit transistor conductance in the 'ON' state, and reduce the current delivery capability--a key determinant of device performance. Here we show that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotubes, greatly reduces or eliminates the barriers for transport through the valence band of nanotubes. In situ modification of the electrode work function by hydrogen is carried out to shed light on the nature of the contacts. With Pd contacts, the 'ON' states of semiconducting nanotubes can behave like ohmically contacted ballistic metallic tubes, exhibiting room-temperature conductance near the ballistic transport limit of 4e(2)/h (refs 4-6), high current-carrying capability (approximately 25 micro A per tube), and Fabry-Perot interferences at low temperatures. Under high voltage operation, the current saturation appears to be set by backscattering of the charge carriers by optical phonons. High-performance ballistic nanotube field-effect transistors with zero or slightly negative Schottky barriers are thus realized.

Journal Article↗
PubMed2003

Electromechanical properties of metallic, quasimetallic, and semiconducting carbon nanotubes under stretching.

An electromechanical system is constructed to explore the electrical properties of various types of suspended single-walled carbon nanotubes under the influence of tensile stretching. Small band-gap semiconducting (or quasimetallic) nanotubes exhibit the largest resistance changes and piezoresistive gauge factors ( approximately 600 to 1000) under axial strains. Metallic nanotubes exhibit much weaker but nonzero sensitivity. Comparison between experiments and theoretical predictions and potential applications of nanotube electromechanical systems for physical sensors (e.g., strain gauges, pressure sensors, etc.) are discussed.

Journal Article↗
PubMed2003

Noncovalent functionalization of carbon nanotubes for highly specific electronic biosensors.

Novel nanomaterials for bioassay applications represent a rapidly progressing field of nanotechnology and nanobiotechnology. Here, we present an exploration of single-walled carbon nanotubes as a platform for investigating surface-protein and protein-protein binding and developing highly specific electronic biomolecule detectors. Nonspecific binding on nanotubes, a phenomenon found with a wide range of proteins, is overcome by immobilization of polyethylene oxide chains. A general approach is then advanced to enable the selective recognition and binding of target proteins by conjugation of their specific receptors to polyethylene oxide-functionalized nanotubes. This scheme, combined with the sensitivity of nanotube electronic devices, enables highly specific electronic sensors for detecting clinically important biomolecules such as antibodies associated with human autoimmune diseases.

Biosensing Techniques↗
PubMed2002

Spontaneous reduction of metal ions on the sidewalls of carbon nanotubes.

Nanotube/nanoparticle hybrid structures are prepared by forming Au and Pt nanoparticles on the sidewalls of single-walled carbon nanotubes. Reducing agent or catalyst-free electroless deposition, which purely utilizes the redox potential difference between Au3+, Pt2+, and the carbon nanotube, is the main driving force for this reaction. It is also shown that carbon nanotubes act as a template for wire-like metal structures. The successful formation of the hybrid structures is monitored by atomic force microscopy (AFM) and electrical measurements.

Journal Article↗
PubMed2002

Carbon nanotubes: synthesis, integration, and properties.

Synthesis of carbon nanotubes by chemical vapor deposition over patterned catalyst arrays leads to nanotubes grown from specific sites on surfaces. The growth directions of the nanotubes can be controlled by van der Waals self-assembly forces and applied electric fields. The patterned growth approach is feasible with discrete catalytic nanoparticles and scalable on large wafers for massive arrays of novel nanowires. Controlled synthesis of nanotubes opens up exciting opportunities in nanoscience and nanotechnology, including electrical, mechanical, and electromechanical properties and devices, chemical functionalization, surface chemistry and photochemistry, molecular sensors, and interfacing with soft biological systems.

Journal Article↗
PubMed2002

High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates.

The integration of materials having a high dielectric constant (high-kappa) into carbon-nanotube transistors promises to push the performance limit for molecular electronics. Here, high-kappa (approximately 25) zirconium oxide thin-films (approximately 8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field-effect transistors. The p-type transistors exhibit subthreshold swings of S approximately 70 mV per decade, approaching the room-temperature theoretical limit for field-effect transistors. Key transistor performance parameters, transconductance and carrier mobility reach 6,000 S x m(-1) (12 microS per tube) and 3,000 cm2 x V(-1) x s(-1) respectively. N-type field-effect transistors obtained by annealing the devices in hydrogen exhibit S approximately 90 mV per decade. High voltage gains of up to 60 are obtained for complementary nanotube-based inverters. The atomic-layer deposition process affords gate insulators with high capacitance while being chemically benign to nanotubes, a key to the integration of advanced dielectrics into molecular electronics.

Carbon↗