Surface-electronic structure of alpha -like Ce compounds.
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Biomedical subjects
G Kaindl
Publications and source records attributed to G Kaindl.
Electronic structure of actinide compounds from LIII-edge x-ray absorption.
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Adsorption of potassium and oxygen on GaAs(110): Charge transfer and enhanced oxidation.
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Thermally induced oxidation of GaAs(110) by a Rb oxide overlayer.
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Switching of band bending at the nonreactive CsOx/GaAs(110) interface.
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Prietsch et al. reply.
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Kaindl and Wertheim reply:
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Pressure-induced changes in LIII x-ray-absorption near-edge structure of CeO2 and CeF4: Relevance to 4f-electronic structure.
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Photoemission study of reactive rare-earth/semiconductor interfaces: Tm/GaAs(110) and Yb/GaAs(110).
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High-resolution electron-energy-loss spectroscopy of YBa2Cu
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Electronic structure of high-Tc superconductors from soft-x-ray absorption.
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Interpretation of photoemission and bremsstrahlung isochromat spectra of uranium compounds.
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Formation of Schottky barrier at the Tm/GaAs(110) interface.
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4f-ligand hybridization in CeF4 and TbF4 probed by core-level spectroscopies.
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4f multiplets in bremsstrahlung-isochromat spectroscopy as a probe for local electron density in Ce compounds.
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Comment on "Ionization energies of valence levels in physisorbed rare-gas multilayers"
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Near-edge x-ray-absorption fine structure in uranium compounds.
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Mixed valency versus covalency in rare-earth core-electron spectroscopy.
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