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Biomedical subjects

Dmitri Golberg

Publications and source records attributed to Dmitri Golberg.

50 records · Page 3Linked to original sources

Hollow boron nitride (BN) nanocages and BN-nanocage-encapsulated nanocrystals.

Hollow boron nitride (BN) nanocages (nanospheres, image on the left) and BN-nanocage-encapsulated GaN nanocrystals (right) have been synthesized by using a homemade B-N-O precursors. The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm. The nanocages have crystalline structures. Peanutlike nanocages with double walls have also been observed; their internal space is divided into seperated compartments by the internal walls. The method is extended to sheathe nanocrystals with BN nanocages; BN-shell/GaN-core nanostructures have been successfully fabriacted. The method may be generally applicable to the fabrication BN-sheathed nanocrystals.

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Bulk synthesis of single-crystalline magnesium oxide nanotubes.

Crystalline tubular magnesium oxide nanostructures were obtained through carbon-thermal evaporation of a MgO powder. Gallium oxide was added into the mixture of MgO and carbon. The reduction of gallium oxide by carbon resulted in gallium vapor at high temperatures. Condensed gallium droplets catalyzed the anisotropic growth of tubular MgO nanostructures in situ. The products were characterized by X-ray powder diffraction technique, scanning electron microscopy, and high-resolution microscopy. All the analyses indicated that the prepared tubular MgO nanostructures are, in fact, single crystals.

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Nanoanalysis by a high-resolution energy filtering transmission electron microscope.

An energy-filtering transmission electron microscope with 300 kV acceleration voltage was developed and the spatial resolution of elemental distribution images was improved. Observing oxygen monolayers in Al(11)O(3)N(9), it was shown that the actual resolution attained is up to 0.5 nm. Surface plasmon loss images of silver particles were taken with a resolution of better than 0.4 nm. Furthermore, the sensitivity is sufficiently high to distinguish indium content differences of 2.5 atomic percent in In(x)Al(1-x)As. This performance is good enough to analyze elemental distribution with atomic-level resolution. Furthermore, since analysis with the energy-filtering microscope is easy and practical, nanoanalysis may come into wide use not only in academic fields but also in industry.

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Nanocable-aligned ZnS tetrapod nanocrystals.

An effective method for synthesizing ZnS-core/carbon-sheath nanocables and nanocable-aligned ZnS tetrapod nanocrystals has been developed. Nanocable heterostructures and nanocable-linked ZnS tetrapods were synthesized in a controllable way. The tetrapods are single crystalline cubic ZnS with triangular-prism branches stretching out in four {111} directions. The tetrapods were aligned together with ZnS-C nanocables along the [100] direction.

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Insulating tubular BN sheathing on semiconducting nanowires.

An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si-SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies.

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Epitaxial heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires.

Epitaxial semiconducting heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires were grown via a simple two-stage thermal evaporation of mixed SiO and ZnS or SiO and ZnSe powders under a precise temperature control. Each nanowire had a uniform diameter of 40-120 nm and length ranging from several to several tens of micrometers. Subnanowires of Si, ZnS, and ZnSe within them had a diameter of 20-50, 40-60, and 20-50 nm, respectively. The optical property (nanoscale cathodoluminescence) was also investigated from these new structures. It is proposed that the Si nanowires formed through disproportionation of SiO to Si in the first evaporation stage and then served as one-dimensional nanoscale substrates (or templates) for an epitaxial growth of ZnS or ZnSe nanowires in the following thermal evaporation of ZnS or ZnSe powders. The present results suggest that the simple method might be useful for the synthesis of many other heterostructures containing Si and II-VI or III-V semiconducting composite nanowires to meet the growing demands of nanoscale science and technology.

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Formation, structure, and structural properties of a new filamentary tubular form: hollow conical-helix of graphitic boron nitride.

A novel tubular form of graphitic boron nitride (BN) displaying a hollow conical-helix was discovered. It was generated via wrapping a single beltlike filament according to the geometry of an Archimedes spiral. Cone apex angles of helical-conical nanotubes (HCNTs) were found to exhibit specific values, each of which refers to a certain coincidence site lattice. A unique structural property of HCNTs was observed, displaying the transformation of apex angles during the annealing process. The observed apex angles were reduced with decreasing annealing temperature, which is in accordance with an estimated HCNT strain energy decrease for a given tubular radius. It is suggested that the curvature and apex angle of a HCNT are determined by a sole dynamic element, that is, enthalpy (DeltaH), whereas the HCNT disclination configuration changes through helical sliding of the filament.

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In situ electrical measurements and manipulation of B/N-doped C nanotubes in a high-resolution transmission electron microscope.

B/N-doped multiwalled C nanotubes were electrically probed by means of a tungsten needle attached to a piezo-driven stage of a high-resolution transmission electron microscope holder. Two-terminal transport measurements were performed in a 'W needle-nanotube-ground' circuit. The I-V curves were recorded in situ while viewing the nanotubes in the imaging mode of the microscope. This allows us to trace nanotube array morphological changes under applied voltage (up to 50 V). Specific manipulation with nanotube assemblies was found to be possible under applied electrical field: attachment of a tiny nanotube bundle to the W needle and extraction of a given nanotube fragment from an entangled complex bunch were achieved. The electrically-probed B/N-doped C nanotubes exhibited alternating B-rich and C-rich B-C-N domains within tubular layers, as revealed by elemental mapping during energy-filtered TEM (Omega filter). At room temperature the nanostructures displayed resistivity (rho) of approximately 1.8 x 10(-5) omegam and linear I-V curves. The key role of a given contact between the probing needle and a nanotube during electrical measurements was particularly verified.

Electricity↗

Catalyzed collapse and enhanced hydrogen storage of BN nanotubes.

The novel morphology of BN nanotubes with a collapsed structure has been discovered by a metal-catalyzed treatment. The collapse causes the dramatic enlargement of a specific surface area of BN nanotubes and remarkably enhances the hydrogen storage capacity of BN nanotubes.

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Large-scale synthesis and structure of boron nitride sub-micron spherical particles.

A novel method, combining chemical vapor deposition and pyrolysis of trimethoxyborane under ammonia atmosphere, has been developed to synthesize spherical boron nitride particles with a uniform diameter distribution from 50 to 400 nm; chemical composition and high-resolution transmission electron microscopy analyses indicate that the sub-micron boron nitride particles exhibit a slightly distorted arrangement of the shell layers.

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