Adatoms on Si(111) and Ge(111) surfaces.
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Biomedical subjects
D Vanderbilt
Publications and source records attributed to D Vanderbilt.
Spontaneous formation of stress domains on crystal surfaces.
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Annealing of heavily arsenic-doped silicon: Electrical deactivation and a new defect complex.
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Model for the energetics of Si and Ge (111) surfaces.
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Absence of large compressive stress on Si(111).
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Dissipation due to a "valley wave" channel in the quantum Hall effect of a multivalley semiconductor.
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Theoretical study of the cohesive and structural properties of Mo and W in bcc, fcc, and hcp structures.
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Calculation of anharmonic phonon couplings in C, Si, and Ge.
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Erratum: Application of a general self-cconsistenccy scheme in the linear combination of atomic orbitals formalism to the electronic and structural properties of Si and W
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Application of a general self-consistency scheme in the linear combination of atomic orbitals formalism to the electronic and structural properties of Si and W.
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Optimally smooth norm-conserving pseudopotentials.
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