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Biomedical subjects

D D Awschalom

Publications and source records attributed to D D Awschalom.

At least 19 recordsLinked to original sources

Nondestructive optical measurements of a single electron spin in a quantum dot.

Kerr rotation measurements on a single electron spin confined in a charge-tunable semiconductor quantum dot demonstrate a means to directly probe the spin off-resonance, thus minimally disturbing the system. Energy-resolved magneto-optical spectra reveal information about the optically oriented spin polarization and the transverse spin lifetime of the electron as a function of the charging of the dot. These results represent progress toward the manipulation and coupling of single spins and photons for quantum information processing.

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Current-induced polarization and the spin Hall effect at room temperature.

Electrically induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically induced internal magnetic field, current-induced in-plane spin polarization is observed with characteristic spin lifetimes that decrease with doping density. The spin Hall effect is also observed, indicated by an electrically induced out-of-plane spin polarization with opposite sign for spins accumulating on opposite edges of the sample. The spin Hall conductivity is estimated as 3+/-1.5 Omega(-1) m(-1)/|e| at 20 K, which is consistent with the extrinsic mechanism. Both the current-induced spin polarization and the spin Hall effect are observed at temperatures from 10 to 295 K.

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Generating spin currents in semiconductors with the spin Hall effect.

We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.

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Impurity band conduction in a high temperature ferromagnetic semiconductor.

The band structure of a prototypical dilute magnetic semiconductor (DMS), Ga1-xMnxAs, is studied across the phase diagram via infrared and optical spectroscopy. We prove that the Fermi energy (EF) resides in a Mn-induced impurity band (IB). Specifically the changes in the frequency dependent optical conductivity [sigma1(omega)] with carrier density are only consistent with EF lying in an IB. Furthermore, the large effective mass (m*) of the carriers inferred from our analysis of sigma1(omega) supports this conclusion. Our findings demonstrate that the metal to insulator transition in this DMS is qualitatively different from other III-V semiconductors doped with nonmagnetic impurities. We also provide insights into the anomalous transport properties of Ga1-xMnxAs.

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Polarization and readout of coupled single spins in diamond.

We study the coupling of a single nitrogen-vacancy center in diamond to a nearby single nitrogen defect at room temperature. The magnetic dipolar coupling leads to a splitting in the electron spin resonance frequency of the nitrogen-vacancy center, allowing readout of the state of a single nitrogen electron spin. At magnetic fields where the spin splitting of the two centers is the same, we observe a strong polarization of the nitrogen electron spin. The amount of polarization can be controlled by the optical excitation power. We combine the polarization and the readout in time-resolved pump-probe measurements to determine the spin relaxation time of a single nitrogen electron spin. Finally, we discuss indications for hyperfine-induced polarization of the nitrogen nuclear spin.

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Anisotropic thermopower and planar Nernst effect in Ga1-xMnxAs ferromagnetic semiconductors.

We present the first experimental study of the thermopower in Mn-doped GaAs ferromagnetic semiconductors. Large magnetothermopower effects in both longitudinal and transverse directions have been observed below the ferromagnetic transition temperature. Unlike magnetoresistance, neither the transverse thermopower (planar Nernst effect) nor the longitudinal thermopower explicitly depend on the strength of the in-plane magnetic field, but rather are intimately related to each other through the magnetization. These newly discovered effects can be satisfactorily explained by an extension of anisotropic magnetotransport model and place important constraints on potential microscopic descriptions of the scattering mechanisms in these materials.

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Suppression of spin relaxation in submicron InGaAs wires.

We investigate electron-spin dynamics in narrow two-dimensional n-InGaAs channels as a function of the channel width. The spin relaxation times increase with decreasing channel width, in accordance with recent theoretical predictions based on the dimensionally constrained D'yakonov-Perel' mechanism. Surprisingly, the suppression of the relaxation rate, which is anticipated for the one-dimensional limit, is observed for widths that are an order of magnitude larger than the electron mean free path. We find the spin precession length and the channel width to be the relevant length scales for interpreting these results.

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Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers.

Semiconductor microcavities offer unique means of controlling light-matter interactions in confined geometries, resulting in a wide range of applications in optical communications and inspiring proposals for quantum information processing and computational schemes. Studies of spin dynamics in microcavities, a new and promising research field, have revealed effects such as polarization beats, stimulated spin scattering and giant Faraday rotation. Here, we study the electron spin dynamics in optically pumped GaAs microdisc lasers with quantum wells and interface-fluctuation quantum dots in the active region. In particular, we examine how the electron spin dynamics are modified by the stimulated emission in the discs, and observe an enhancement of the spin-coherence time when the optical excitation is in resonance with a high-quality (Q approximately 5,000) lasing mode. This resonant enhancement, contrary to expectations from the observed trend in the carrier-recombination time, is then manipulated by altering the cavity design and dimensions. In analogy with devices based on excitonic coherence, this ability to engineer coherent interactions between electron spins and photons may provide new pathways towards spin-dependent quantum optoelectronics.

Biomedical Engineering↗

Observation of spin Coulomb drag in a two-dimensional electron gas.

An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin that offer potential advantages in dissipation, size and speed over charge-based devices. However, these advantages bring with them additional complexity. Because each electron carries a single, fixed value (- e) of charge, the electrical current carried by a gas of electrons is simply proportional to its total momentum. A fundamental consequence is that the charge current is not affected by interactions that conserve total momentum, notably collisions among the electrons themselves. In contrast, the electron's spin along a given spatial direction can take on two values, +/- [planck]/2 (conventionally upward arrow, downward arrow), so that the spin current and momentum need not be proportional. Although the transport of spin polarization is not protected by momentum conservation, it has been widely assumed that, like the charge current, spin current is unaffected by electron-electron (e-e) interactions. Here we demonstrate experimentally not only that this assumption is invalid, but also that over a broad range of temperature and electron density, the flow of spin polarization in a two-dimensional gas of electrons is controlled by the rate of e-e collisions.

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Antiferromagnetic s-d exchange coupling in GaMnAs.

Measurements of coherent electron spin dynamics in Ga1-xMnxAs/Al0.4Ga0.6As quantum wells with 0.0006%<x<0.03% show an antiferromagnetic (negative) exchange between s-like conduction band electrons and electrons localized in the d shell of the Mn2+ impurities. The magnitude of the s-d exchange parameter, N0alpha, varies as a function of well width indicative of a large and negative contribution due to kinetic exchange. In the limit of no quantum confinement, N0alpha extrapolates to -0.09+/-0.03 eV indicating that antiferromagnetic s-d exchange is a bulk property of GaMnAs. Measurements of the polarization-resolved photoluminescence show strong discrepancy from a simple model of the exchange enhanced Zeeman splitting, indicative of additional complexity in the exchange split valence band.

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Teleportation of electronic many-qubit states encoded in the electron spin of quantum dots via single photons.

We propose a teleportation scheme that relies only on single-photon measurements and Faraday rotation, for teleportation of many-qubit entangled states stored in the electron spins of a quantum dot system. The interaction between a photon and the two electron spins, via Faraday rotation in microcavities, establishes Greenberger-Horne-Zeilinger entanglement in the spin-photon-spin system. The appropriate single-qubit measurements, and the communication of two classical bits, produce teleportation. This scheme provides the essential link between spintronic and photonic quantum information devices by permitting quantum information to be exchanged between them.

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Observation of the spin Hall effect in semiconductors.

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

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Current-induced spin polarization in strained semiconductors.

The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the electrically polarized spins are characterized by a combination of optical and electrical methods. In addition, the dynamics of the current-induced spins are investigated by utilizing electrical pulses generated from a photoconductive switch. These results demonstrate the possibility of a spin source for semiconductor spintronic devices without the use of magnetic materials.

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Negative intrinsic resistivity of an individual domain wall in epitaxial (Ga,Mn)As microdevices.

Magnetic domains, and the boundaries that separate them (domain walls, DWs), play a central role in the science of magnetism. Understanding and controlling domains is important for many technological applications in spintronics, and may lead to new devices. Although theoretical efforts have elucidated several mechanisms underlying the resistance of a single DW, various experiments report conflicting results, even for the overall sign of the DW resistance. The question of whether an individual DW gives rise to an increase or decrease of the resistance therefore remains open. Here we report an approach to DW studies in a class of ferromagnetic semiconductors (as opposed to metals) that offer promise for spintronics. These experiments involve microdevices patterned from monocrystalline (Ga,Mn)As epitaxial layers. The giant planar Hall effect that we previously observed in this material enables direct, real-time observation of the propagation of an individual magnetic DW along multiprobe devices. We apply steady and pulsed magnetic fields, to trap and carefully position an individual DW within each separate device studied. This protocol reproducibly enables high-resolution magnetoresistance measurements across an individual wall. We consistently observe negative intrinsic DW resistance that scales with channel width. This appears to originate from sizeable quantum corrections to the magnetoresistance.

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Spin accumulation in forward-biased MnAs/GaAs Schottky diodes.

We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the nonequilibrium carrier polarization.

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Coherent spin manipulation without magnetic fields in strained semiconductors.

A consequence of relativity is that in the presence of an electric field, the spin and momentum states of an electron can be coupled; this is known as spin-orbit coupling. Such an interaction opens a pathway to the manipulation of electron spins within non-magnetic semiconductors, in the absence of applied magnetic fields. This interaction has implications for spin-based quantum information processing and spintronics, forming the basis of various device proposals. For example, the concept of spin field-effect transistors is based on spin precession due to the spin-orbit coupling. Most studies, however, focus on non-spin-selective electrical measurements in quantum structures. Here we report the direct measurement of coherent electron spin precession in zero magnetic field as the electrons drift in response to an applied electric field. We use ultrafast optical techniques to spatiotemporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial layers. Unexpectedly, we observe spin splitting in these simple structures arising from strain in the semiconductor films. The observed effect provides a flexible approach for enabling electrical control over electron spins using strain engineering. Moreover, we exploit this strain-induced field to electrically drive spin resonance with Rabi frequencies of up to approximately 30 MHz.

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Local manipulation of nuclear spin in a semiconductor quantum well.

The shaping of nuclear spin polarization profiles and the induction of nuclear resonances are demonstrated within a parabolic quantum well using an externally applied gate voltage. Voltage control of the electron and hole wave functions results in nanometer-scale sheets of polarized nuclei positioned along the growth direction of the well. Applying rf voltages across the gates induces resonant spin transitions of selected isotopes. This depolarizing effect depends strongly on the separation of electrons and holes, suggesting that a highly localized mechanism accounts for the observed behavior.

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Element resolved spin configuration in ferromagnetic manganese-doped gallium arsenide.

We report induced Ga and As moments in ferromagnetic Ga(1-x)MnxAs detected using x-ray magnetic circular dichroism at the Mn, Ga, and As L(3,2) edges. Across a broad composition range, we find As and Ga dichroism signals which indicate an As 4s moment coupled antiparallel to the Mn 3d moment, and a smaller parallel Ga 4s moment. The Ga moment follows that of Mn in both doping and temperature dependence. These results are consistent with recent predictions of induced GaAs host moments and support the model of carrier-mediated ferromagnetic ordering involving As-derived valence band states.

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