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D C Tsui

Publications and source records attributed to D C Tsui.

At least 19 recordsLinked to original sources

Intervalley gap anomaly of two-dimensional electrons in silicon.

We report here a systematic study of the energy gaps at the odd-integer quantum Hall states nu = 3 and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley splitting is independent of the in-plane fields. However, the nu = 3 valley gap differs by about a factor of 3 (Deltav approximately 0.4 vs 1.2 K) on different sides of the coincidence. More surprisingly, instead of reducing to zero, the energy gaps at nu = 3 and 5 rise rapidly when approaching the coincidence angles. We believe that such an anomaly is related to strong couplings of the nearly degenerate Landau levels.

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Quantization of the diagonal resistance: density gradients and the empirical resistance rule in a 2D system.

We have observed quantization of the diagonal resistance, R(xx), at the edges of several quantum Hall states. Each quantized R(xx) value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R(xy). Peaks in R(xx) occur at different positions in positive and negative magnetic fields. Practically all R(xx) features can be explained quantitatively by a 1%/cm electron density gradient. Therefore, R(xx) is determined by R(xy) and unrelated to the diagonal resistivity rho(xx). Our findings throw an unexpected light on the empirical resistivity rule for 2D systems.

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Magnetic-field-induced insulating phases at large r s.

Exploring a two-dimensional hole system in the large r(s) regime we found a surprisingly rich phase diagram. At the highest densities, beside the nu =1/3, 2/3, and 2/5 fractional quantum Hall states, we observe both of the previously reported high field insulating and reentrant insulating phases. As the density is lowered, the reentrant insulating phase initially strengthens, then it unexpectedly starts weakening until it completely disappears. The intricate behavior of the insulating phases can be explained by a nonmonotonic melting line in the nu-r(s) phase space.

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Scaling and universality of integer quantum Hall plateau-to-plateau transitions.

We have investigated the integer quantum Hall plateau-to-plateau transition in two-dimensional electrons confined to AlxGa(1-x)As-Al0.33Ga0.67As heterostructures over a broad range of Al concentration x. For x between 0.65% and 1.6%, where the dominant contribution to disorder is from the short-range alloy potential fluctuations, we observe a perfect power-law scaling in the temperature range from 30 mK to 1 K with a critical exponent kappa = 0.42 +/- 0.01.

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Evidence for skyrmion crystallization from NMR relaxation experiments.

A resistively detected NMR technique was used to probe the two-dimensional electron gas in a GaAs/AlGaAs quantum well. The spin-lattice relaxation rate (1/T(1)) was extracted at near complete filling of the first Landau level by electrons. The nuclear spin of (75)As is found to relax much more efficiently with T --> 0 and when a well developed quantum Hall state with R(xx) approximately 0 occurs. The data show a remarkable correlation between the nuclear spin relaxation and localization. This suggests that the magnetic ground state near complete filling of the first Landau level may contain a lattice of topological spin texture, i.e., a Skyrmion crystal.

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Tilt-induced localization and delocalization in the second Landau level.

We have investigated the behavior of electronic phases of the second Landau level under tilted magnetic fields. The fractional quantum Hall liquids at nu=2+1/5 and 2+4/5 and the solid phases at nu=2.30, 2.44, 2.57, and 2.70 are quickly destroyed with tilt. This behavior can be interpreted as a tilt driven localization of the 2+1/5 and 2+4/5 fractional quantum Hall liquids and a delocalization through the melting of solid phases in the top Landau level, respectively. The evolution towards the classical Hall gas of the solid phases is suggestive of antiferromagnetic ordering.

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Spin polarization dependence of the coulomb drag at large r(s).

We find that the temperature dependence of the drag resistivity between two dilute two-dimensional hole systems exhibits an unusual dependence upon spin polarization. Our main observation is that near the apparent metal-insulator transition, the temperature dependence of the drag, given by Talpha, weakens significantly with the application of a parallel magnetic field (B(||)), with alpha saturating at half its zero field value for B(||)>B(*), where B(*) is the polarization field.

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Competition between a fractional quantum hall liquid and bubble and Wigner crystal phases in the third Landau level.

Magnetotransport measurements were performed in an ultrahigh mobility GaAs/AlGaAs quantum well of density approximately 3.0 x 10(11) cm(-2). The temperature dependence of the magnetoresistance Rxx was studied in detail in the vicinity of nu=9/2. In particular, we discovered new minima in Rxx at a filling factor nu approximately 41/5 and 44/5, but only at intermediate temperatures 80 approximately less than T approximately less than 120 mK. We interpret these as evidence for a fractional quantum Hall liquid forming in the N=2 Landau level and competing with bubble and Wigner crystal phases favored at lower temperatures. Our data suggest that a magnetically driven insulator-insulator quantum phase transition occurs between the bubble and Wigner crystal phases at T=0.

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Evidence for two different solid phases of two-dimensional electrons in high magnetic fields.

We have observed two different rf resonances in the frequency dependent real diagonal conductivity of very high quality two-dimensional electron systems in the high magnetic field insulating phase and interpret them as coming from two different pinned electron solid phases (labeled as "A" and "B"). The "A" resonance is observable for Landau level filling nu<2/9 [reentrant around the nu=1/5 fractional quantum Hall effect (FQHE)] and then crosses over to the different "B" resonance which dominates at sufficiently low nu. Moreover, the "A" resonance is found to show dispersion with respect to the size of the transmission line, indicating that the "A" phase has a large correlation length. We suggest that quantum correlations such as those responsible for FQHE may play an important role in giving rise to such different solids.

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Evidence of a first-order phase transition between Wigner-crystal and bubble phases of 2D electrons in higher Landau Levels.

For filling factors nu in the range between 4.16 and 4.28, we simultaneously detect two resonances in the real diagonal microwave conductivity of a two-dimensional electron system (2DES) at low temperature T approximately 35 mK. We attribute the resonance to Wigner-crystal and Bubble phases of the 2DES in higher Landau Levels. For nu below and above this range, only single resonances are observed. The coexistence of both phases is taken as evidence of a first-order phase transition. We estimate the transition point as nu=4.22.

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Electron correlation in the second Landau level: a competition between many nearly degenerate quantum phases.

At a very low-temperature of 9 mK, electrons in the second Landau level of an extremely high-mobility two-dimensional electron system exhibit a very complex electronic behavior. With a varying filling factor, quantum liquids of different origins compete with several insulating phases leading to an irregular pattern in the transport parameters. We observe a fully developed nu=2+2/5 state separated from the even-denominator nu=2+1/2 state by an insulating phase and a nu=2+2/7 and nu=2+1/5 state surrounded by such phases. A developing plateau at nu=2+3/8 points to the existence of other even-denominator states.

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Two-flux composite fermion series of the fractional quantum Hall states in strained Si.

Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si(0.75)Ge(0.25)/Si/Si(0.75)Ge0.25 heterostructure, at temperatures down to 30 mK and in magnetic fields up to 45 T. We observe around nu=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at nu=2/3, 3/5, 4/7, and at nu=4/9, 2/5, 1/3. Among these FQHE states, the nu=1/3, 4/7, and 4/9 states are seen for the first time in the Si/SiGe system. Interestingly, of the CF series, the 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is conspicuously missing, resembling the observation in the IQHE regime that the nu=3 is weaker than the nearby nu=4 state. Our results can be quantitatively understood in the picture of CF's with the valley degree of freedom.

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Possible observation of phase coexistence of the nu=1/3 fractional quantum hall liquid and a solid.

We have measured the magnetoresistance of a very low density and extremely high quality two-dimensional hole system. With increasing magnetic field applied perpendicularly to the sample we observe the sequence of insulating, nu=1/3 fractional quantum Hall liquid, and insulating phases. In both of the insulating phases in the vicinity of the nu=1/3 filling the magnetoresistance has an unexpected oscillatory behavior with the magnetic field. These oscillations are not of the Shubnikov-de Haas type and cannot be explained by spin effects. They are most likely the consequence of the formation of a new electronic phase which is intermediate between the correlated Hall liquid and a disorder pinned solid.

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Microwave resonance of the 2D Wigner crystal around integer Landau fillings.

We have observed a resonance in the real part of the finite frequency diagonal conductivity using microwave absorption measurements in high quality 2D electron systems near integer fillings. The resonance exists in some neighborhood of filling factor around corresponding integers and is qualitatively similar to previously observed resonance of weakly pinned Wigner crystal in high B and very small filling factor regime. Data measured around both nu=1 and nu=2 are presented. We interpret the resonance as the signature of the Wigner crystal state around integer Landau levels.

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In-plane magnetodrag between dilute two-dimensional systems.

We performed in-plane magnetodrag measurements on dilute double layer two-dimensional hole systems, at in-plane magnetic fields that suppress the apparent metallic behavior, and to fields well above those required to fully spin polarize the system. When compared to the single layer magnetoresistance, the magnetodrag exhibits exactly the same qualitative behavior. In addition, we have found that the enhancement to the drag from the in-plane field exhibits a strong maximum when both layer densities are matched.

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Fractional quantum Hall effect of composite fermions.

In a GaAs/AlGaAs quantum well of density 1 x 10(11) cm(-2) we observed a fractional quantum Hall effect (FQHE) at nu = 4/11 and 5/13, and weaker states at nu = 6/17, 4/13, 5/17, and 7/11. These sequences of fractions do not fit into the standard series of integral quantum Hall effects of composite fermions (CF) at nu = p/(2mp +/- 1). They rather can be regarded as the FQHE of CFs attesting to residual interactions between these composite particles. In tilted magnetic fields the nu = 4/11 state remains unchanged, strongly suggesting it to be spin polarized. The weak nu = 7/11 state vanishes quickly with tilt.

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Correlation lengths of the wigner-crystal order in a two-dimensional electron system at high magnetic fields.

The insulator terminating the fractional quantum Hall series at low Landau level filling nu is generally taken to be a pinned Wigner crystal (WC), and exhibits a microwave resonance that is interpreted as a WC pinning mode. For a high quality sample at several densities, n, we find maxima in resonance peak frequency, f(pk), vs magnetic field, B. L, the correlation length of WC order, is calculated from f(pk). For each n, L vs nu tends at low nu toward a line with positive intercept; the fit is accurate over as much as a factor of 5 range of nu. The linear behavior is interpreted as due to B compressing the electron wave functions, to alter the effective electron-impurity interaction.

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Microwave resonance of the bubble phases in 1/4 and 3/4 filled high Landau levels.

We have measured the diagonal conductivity, sigma(xx), in the microwave regime of an ultrahigh mobility two dimensional electron system. We find a sharp resonance in Re[sigma(xx)] versus frequency when nu>4 and the partial filling of the highest Landau level, nu(*), is approximately 1/4 or 3/4 and temperatures <0.1 K. The resonance appears for a range of nu(*) from 0.20 to 0.38 and again from 0.64 to 0.80. The peak frequency f(pk) changes from approximately 500 to approximately 150 MHz as nu(*)=1/2 is approached. This range of f(pk) shows no dependence on nu where the resonance is observed. The quality factor, Q, of the resonance is maximum at about nu(*)=0.25 and 0.74. We interpret the resonance as due to a pinning mode of the bubble phase crystal.

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