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Biomedical subjects

D C Driscoll

Publications and source records attributed to D C Driscoll.

6 recordsLinked to original sources

Magnetic field symmetry and phase rigidity of the nonlinear conductance in a ring.

We have performed nonlinear transport measurements as a function of a perpendicular magnetic field in a semiconductor Aharonov-Bohm ring connected to two leads. While the voltage-symmetric part of the conductance is symmetric in the magnetic field, the voltage-antisymmetric part of the conductance is not symmetric. These symmetry relations are compatible with the scattering theory for nonlinear mesoscopic transport. The observed asymmetry can be tuned continuously by changing the gate voltages near the arms of the ring, showing that the phase of the nonlinear conductance in a two-terminal interferometer is not rigid, in contrast with the case for the linear conductance.

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Counting statistics of single electron transport in a quantum dot.

We have measured the full counting statistics of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact. This method gives direct access to the distribution function of current fluctuations. Suppression of the second moment (related to the shot noise) and the third moment (related to the asymmetry of the distribution) in a tunable semiconductor QD is demonstrated experimentally. With this method we demonstrate the ability to measure very low current and noise levels.

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Probing the Kondo density of states in a three-terminal quantum ring.

We have measured the Kondo effect in a quantum ring connected to three terminals. In this configuration nonlinear transport measurements allow us to check which lead contributes to the Kondo density of states (DOS) and which does not. The ring geometry allows a fine-tuning of the coupling to each lead through the Aharonov-Bohm effect via application of a magnetic field. When the ring is connected to two strongly and one weakly coupled leads, conductance through the weakly coupled lead provides a direct measurement of the DOS in the Kondo regime. By applying a bias between the two strongly coupled leads, we demonstrate directly the splitting of the out-of-equilibrium Kondo DOS.

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Cotunneling-mediated transport through excited states in the Coulomb-blockade regime.

We present finite-bias transport measurements on a few-electron quantum dot. In the Coulomb-blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the nonblockaded regime. In addition, we observe structures related to sequential tunneling through the dot, occurring after it has been excited by an inelastic cotunneling process. We explain our findings using transport calculations within the real-time Green's function approach, including diagrams up to fourth order in the tunneling matrix elements.

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Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation.

We present a scheme that enables gigahertz-bandwidth three-dimensional control of electron spins in a semiconductor heterostructure with the use of a single voltage signal. Microwave modulation of the Landé g tensor produces frequency-modulated electron spin precession. Driving at the Larmor frequency results in g-tensor modulation resonance, which is functionally equivalent to electron spin resonance but without the use of time-dependent magnetic fields. These results provide proof of the concept that quantum spin information can be locally manipulated with the use of high-speed electrical circuits.

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Electrical control of spin coherence in semiconductor nanostructures.

The processing of quantum information based on the electron spin degree of freedom requires fast and coherent manipulation of local spins. One approach is to provide spatially selective tuning of the spin splitting--which depends on the g-factor--by using magnetic fields, but this requires their precise control at reduced length scales. Alternative proposals employ electrical gating and spin engineering in semiconductor heterostructures involving materials with different g-factors. Here we show that spin coherence can be controlled in a specially designed AlxGa1-xAs quantum well in which the Al concentration x is gradually varied across the structure. Application of an electric field leads to a displacement of the electron wavefunction within the quantum well, and because the electron g-factor varies strongly with x, the spin splitting is therefore also changed. Using time-resolved optical techniques, we demonstrate gate-voltage-mediated control of coherent spin precession over a 13-GHz frequency range in a fixed magnetic field of 6 T, including complete suppression of precession, reversal of the sign of g, and operation up to room temperature.

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