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Biomedical subjects

Charles M Lieber

Publications and source records attributed to Charles M Lieber.

At least 19 recordsLinked to original sources
PubMed2006

Detection, stimulation, and inhibition of neuronal signals with high-density nanowire transistor arrays.

We report electrical properties of hybrid structures consisting of arrays of nanowire field-effect transistors integrated with the individual axons and dendrites of live mammalian neurons, where each nanoscale junction can be used for spatially resolved, highly sensitive detection, stimulation, and/or inhibition of neuronal signal propagation. Arrays of nanowire-neuron junctions enable simultaneous measurement of the rate, amplitude, and shape of signals propagating along individual axons and dendrites. The configuration of nanowire-axon junctions in arrays, as both inputs and outputs, makes possible controlled studies of partial to complete inhibition of signal propagation by both local electrical and chemical stimuli. In addition, nanowire-axon junction arrays were integrated and tested at a level of at least 50 "artificial synapses" per neuron.

Action Potentials↗
PubMed2006

Ge/Si nanowire heterostructures as high-performance field-effect transistors.

Semiconducting carbon nanotubes and nanowires are potential alternatives to planar metal-oxide-semiconductor field-effect transistors (MOSFETs) owing, for example, to their unique electronic structure and reduced carrier scattering caused by one-dimensional quantum confinement effects. Studies have demonstrated long carrier mean free paths at room temperature in both carbon nanotubes and Ge/Si core/shell nanowires. In the case of carbon nanotube FETs, devices have been fabricated that work close to the ballistic limit. Applications of high-performance carbon nanotube FETs have been hindered, however, by difficulties in producing uniform semiconducting nanotubes, a factor not limiting nanowires, which have been prepared with reproducible electronic properties in high yield as required for large-scale integrated systems. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar counterparts is still unclear. Here we report studies on Ge/Si core/shell nanowire heterostructures configured as FETs using high-kappa dielectrics in a top-gate geometry. The clean one-dimensional hole-gas in the Ge/Si nanowire heterostructures and enhanced gate coupling with high-kappa dielectrics give high-performance FETs values of the scaled transconductance (3.3 mS microm(-1)) and on-current (2.1 mA microm(-1)) that are three to four times greater than state-of-the-art MOSFETs and are the highest obtained on NWFETs. Furthermore, comparison of the intrinsic switching delay, tau = CV/I, which represents a key metric for device applications, shows that the performance of Ge/Si NWFETs is comparable to similar length carbon nanotube FETs and substantially exceeds the length-dependent scaling of planar silicon MOSFETs.

Germanium↗
PubMed2006

Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection.

Integrating nanophotonics with electronics could enhance and/or enable opportunities in areas ranging from communications and computing to novel diagnostics. Light sources and detectors are important elements for integration, and key progress has been made using semiconducting nanowires and carbon nanotubes to yield electrically driven sources and photoconductor detectors. Detection with photoconductors has relatively poor sensitivity at the nanometre scale, and thus large amplification is required to detect low light levels and ultimately single photons with reasonable response time. Here, we report avalanche multiplication of the photocurrent in nanoscale p-n diodes consisting of crossed silicon-cadmium sulphide nanowires. Electrical transport and optical measurements demonstrate that the nanowire avalanche photodiodes (nanoAPDs) have ultrahigh sensitivity with detection limits of less than 100 photons, and subwavelength spatial resolution of at least 250 nm. Crossed nanowire arrays also show that nanoAPDs are reproducible and can be addressed independently without cross-talk. NanoAPDs and arrays could open new opportunities for ultradense integrated systems, sensing and imaging applications.

Journal Article↗
PubMed2006

Hybrid single-nanowire photonic crystal and microresonator structures.

We report a hybrid approach for photonic systems that combines chemically synthesized single nanowire emitters with lithographically defined photonic crystal and racetrack microresonator structures. Finite-difference time-domain calculations were used to design nanowire photonic crystal structures where the photonic band gap overlaps the electronic band gap of the nanowire. Photoluminescence (PL) images of cadmium sulfide (CdS) nanowire photonic crystal structures designed in this way demonstrate localized emission from engineered defects and light suppression in regions of the photonic crystal. PL spectroscopy studies of defect-free nanowire photonic crystal structures further demonstrate the photonic band gap or stop band that spans most of the CdS band edge emission spectrum. In addition, single CdS nanowire-racetrack microresonator structures were fabricated, and PL imaging and spectroscopy measurements show good coupling of the nanowire to the microcavity including efficient feedback and amplified spontaneous emission. These hybrid structures exploit unique strengths of bottom-up and top-down approaches and thereby open new opportunities in nanophotonics from efficient and localized light sources to integrated optical processing.

Journal Article↗
PubMed2006

Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.

We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The radial nanowire heterostructures were prepared by sequential shell growth immediately following nanowire elongation using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/AlN/AlGaN radial nanowire heterostructures are dislocation-free single crystals. In addition, the thicknesses and compositions of the individual AlN and AlGaN shells were unambiguously identified using cross-sectional high-angle annular darkfield scanning transmission electron microscopy (HAADF-STEM). Transport measurements carried out on GaN/AlN/AlGaN and GaN nanowires prepared using similar conditions demonstrate the existence of electron gas in the undoped GaN/AlN/AlGaN nanowire heterostructures and also yield an intrinsic electron mobility of 3100 cm(2)/Vs and 21,000 cm(2)/Vs at room temperature and 5 K, respectively, for the heterostructure. Field-effect transistors fabricated with ZrO(2) dielectrics and metal top gates showed excellent gate coupling with near ideal subthreshold slopes of 68 mV/dec, an on/off current ratio of 10(7), and scaled on-current and transconductance values of 500 mA/mm and 420 mS/mm. The ability to control synthetically the electronic properties of nanowires using band structure design in III-nitride radial nanowire heterostructures opens up new opportunities for nanoelectronics and provides a new platform to study the physics of low-dimensional electron gases.

Aluminum Compounds↗
PubMed2006

Single p-type/intrinsic/n-type silicon nanowires as nanoscale avalanche photodetectors.

We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. The p-i-n nanowires were structurally characterized by transmission electron microscopy, and the spatially resolved electrical properties of individual nanowires were determined by electrostatic force and scanning gate microscopies. Temperature-dependent current-voltage measurements recorded from individual p-i-n devices show an increase in the breakdown voltage with temperature, characteristic of band-to-band impact ionization, or avalanche breakdown. Spatially resolved photocurrent measurements show that the largest photocurrent is generated at the intrinsic region located between the electrode contacts, with multiplication factors in excess of ca. 30, and demonstrate that single p-i-n nanowires function as avalanche photodiodes. Electron- and hole-initiated avalanche gain measurements performed by localized photoexcitation of the p-type and n-type regions yield multiplication factors of ca. 100 and 20, respectively. These results demonstrate the significant potential of single p-i-n nanowires as nanoscale avalanche photodetectors and open possible opportunities for studying impact ionization of electrons and holes within quasi-one-dimensional semiconductor systems.

Journal Article↗
PubMed2005

Encoding electronic properties by synthesis of axial modulation-doped silicon nanowires.

We describe the successful synthesis of modulation-doped silicon nanowires by achieving pure axial elongation without radial overcoating during the growth process. Scanning gate microscopy shows that the key properties of the modulated structures-including the number, size, and period of the differentially doped regions-are defined in a controllable manner during synthesis, and moreover, that feature sizes to less than 50 nanometers are possible. Electronic devices fabricated with designed modulation-doped nanowire structures demonstrate their potential for lithography-independent address decoders and tunable, coupled quantum dots in which changes in electronic properties are encoded by synthesis rather than created by conventional lithography-based techniques.

Journal Article↗
PubMed2005

Multiplexed electrical detection of cancer markers with nanowire sensor arrays.

We describe highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays. Protein markers were routinely detected at femtomolar concentrations with high selectivity, and simultaneous incorporation of control nanowires enabled discrimination against false positives. Nanowire arrays allowed highly selective and sensitive multiplexed detection of prostate specific antigen (PSA), PSA-alpha1-antichymotrypsin, carcinoembryonic antigen and mucin-1, including detection to at least 0.9 pg/ml in undiluted serum samples. In addition, nucleic acid receptors enabled real-time assays of the binding, activity and small-molecule inhibition of telomerase using unamplified extracts from as few as ten tumor cells. The capability for multiplexed real-time monitoring of protein markers and telomerase activity with high sensitivity and selectivity in clinically relevant samples opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.

Biomarkers, Tumor↗
PubMed2005

One-dimensional hole gas in germanium/silicon nanowire heterostructures.

Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high-performance devices. The analogous development of one-dimensional (1D) electron or hole gas systems through controlled growth on 1D nanostructure substrates, which could open up opportunities beyond existing carbon nanotube and nanowire systems, has not been realized. Here, we report the synthesis and transport studies of a 1D hole gas system based on a free-standing germanium/silicon (Ge/Si) core/shell nanowire heterostructure. Room temperature electrical transport measurements clearly show hole accumulation in undoped Ge/Si nanowire heterostructures, in contrast to control experiments on single-component nanowires. Low-temperature studies show well-controlled Coulomb blockade oscillations when the Si shell serves as a tunnel barrier to the hole gas in the Ge channel. Transparent contacts to the hole gas also have been reproducibly achieved by thermal annealing. In such devices, we observe conductance quantization at low temperatures, corresponding to ballistic transport through 1D subbands, where the measured subband energy spacings agree with calculations for a cylindrical confinement potential. In addition, we observe a "0.7 structure," which has been attributed to spontaneous spin polarization, suggesting the universality of this phenomenon in interacting 1D systems. Lastly, the conductance exhibits little temperature dependence, consistent with our calculation of reduced backscattering in this 1D system, and suggests that transport is ballistic even at room temperature.

Journal Article↗
PubMed2005

Ultra-sensitive imaging and interfacial analysis of patterned hydrophilic SAM surfaces using energy dissipation chemical force microscopy.

Energy dissipation chemical force microscopy has been used to analyze the dissipative properties of chemically similar regions of hydroxyl- and carboxyl-terminated SAMs on gold with a hydroxyl-terminated tip. Energy dissipation imaging quantitatively isolates dissipative interfacial interactions from topography, producing a significantly more informative image than phase imaging. Also, energy dissipation force curves probed the rheological properties of the tip-sample interaction. Viscosity of the confined water increased slightly over that of the bulk, and SAM deformation was found to have a longer retardation time than restructuring of interfacial ions and solvent during tip-sample contact.

Journal Article↗
PubMed2005

Nanotechnology: high-speed integrated nanowire circuits.

Macroelectronic circuits made on substrates of glass or plastic could one day make computing devices ubiquitous owing to their light weight, flexibility and low cost. But these substrates deform at high temperatures so, until now, only semiconductors such as organics and amorphous silicon could be used, leading to poor performance. Here we present the use of low-temperature processes to integrate high-performance multi-nanowire transistors into logical inverters and fast ring oscillators on glass substrates. As well as potentially enabling powerful electronics to permeate all aspects of modern life, this advance could find application in devices such as low-cost radio-frequency tags and fully integrated high-refresh-rate displays.

Journal Article↗
PubMed2005

Label-free detection of small-molecule-protein interactions by using nanowire nanosensors.

Development of miniaturized devices that enable rapid and direct analysis of the specific binding of small molecules to proteins could be of substantial importance to the discovery of and screening for new drug molecules. Here, we report highly sensitive and label-free direct electrical detection of small-molecule inhibitors of ATP binding to Abl by using silicon nanowire field-effect transistor devices. Abl, which is a protein tyrosine kinase whose constitutive activity is responsible for chronic myelogenous leukemia, was covalently linked to the surfaces of silicon nanowires within microfluidic channels to create active electrical devices. Concentration-dependent binding of ATP and concentration-dependent inhibition of ATP binding by the competitive small-molecule antagonist STI-571 (Gleevec) were assessed by monitoring the nanowire conductance. In addition, concentration-dependent inhibition of ATP binding was examined for four additional small molecules, including reported and previously unreported inhibitors. These studies demonstrate that the silicon nanowire devices can readily and rapidly distinguish the affinities of distinct small-molecule inhibitors and, thus, could serve as a technology platform for drug discovery.

Adenosine Triphosphate↗
PubMed2005

Nanowires for integrated multicolor nanophotonics.

Nanoscale light-emitting diodes (nanoLEDs) with colors spanning from the ultraviolet to near-infrared region of the electromagnetic spectrum were prepared using a solution-based approach in which emissive electron-doped semiconductor nanowires were assembled with nonemissive hole-doped silicon nanowires in a crossed nanowire architecture. Single- and multicolor nanoLED devices and arrays were made with colors specified in a predictable way by the bandgaps of the III-V and II-VI nanowire building blocks. The approach was extended to combine nanoscale electronic and photonic devices into integrated structures, where a nanoscale transistor was used to switch the nanoLED on and off. In addition, this approach was generalized to hybrid devices consisting of nanowire emitters assembled on lithographically patterned planar silicon structures, which could provide a route for integrating photonic devices with conventional silicon microelectronics. Lastly, nanoLEDs were used to optically excite emissive molecules and nanoclusters, and hence could enable a range of integrated sensor/detection "chips" with multiplexed analysis capabilities.

Luminescent Measurements↗
PubMed2005

Lasing in single cadmium sulfide nanowire optical cavities.

The mechanism of lasing in single cadmium sulfide (CdS) nanowire cavities was elucidated by temperature-dependent and time-resolved photoluminescence (PL) measurements. Temperature-dependent PL studies reveal rich spectral features and show that an exciton-exciton interaction is critical to lasing up to 75 K, while an exciton-phonon process dominates at higher temperatures. These measurements together with temperature and intensity dependent lifetime and threshold studies show that lasing is due to formation of excitons and, moreover, have implications for the design of efficient, low threshold nanowire lasers.

Cadmium Compounds↗
PubMed2005

General synthesis of manganese-doped II-VI and III-V semiconductor nanowires.

A general approach for the synthesis of manganese-doped II-VI and III-V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn2+ ((4)T1-->(6)A1) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn3+) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices.

Crystallization↗
PubMed2005

Coherent single charge transport in molecular-scale silicon nanowires.

We report low-temperature electrical transport studies of chemically synthesized, molecular-scale silicon nanowires. Individual nanowires exhibit Coulomb blockade oscillations characteristic of charge addition to a single nanostructure on length scales up to at least 400 nm. Studies also demonstrate coherent charge transport through discrete single particle quantum levels extending across whole devices, and show that the ground-state spin configuration is consistent with the constant interaction model. In addition, depletion of nanowires suggests that phase coherent single-dot characteristics are accessible in the few-charge regime. These results differ from those for nanofabricated planar silicon devices, which show localization on much shorter length scales, and thus suggest potential for molecular-scale silicon nanowires as building blocks for quantum and conventional electronics.

Nanostructures↗
PubMed2005

Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes.

We report the growth and characterization of core/multishell nanowire radial heterostructures, and their implementation as efficient and synthetically tunable multicolor nanophotonic sources. Core/multishell nanowires were prepared by metal-organic chemical vapor deposition with an n-GaN core and InxGa1-xN/GaN/p-AlGaN/p-GaN shells, where variation of indium mole fraction is used to tune emission wavelength. Cross-sectional transmission electron microscopy studies reveal that the core/multishell nanowires are dislocation-free single crystals with a triangular morphology. Energy-dispersive X-ray spectroscopy clearly shows shells with distinct chemical compositions, and quantitatively confirms that the thickness and composition of individual shells can be well controlled during synthesis. Electrical measurements show that the p-AlGaN/p-GaN shell structure yields reproducible hole conduction, and electroluminescence measurements demonstrate that in forward bias the core/multishell nanowires function as light-emitting diodes, with tunable emission from 365 to 600 nm and high quantum efficiencies. The ability to synthesize rationally III-nitride core/multishell nanowire heterostructures opens up significant potential for integrated nanoscale photonic systems, including multicolor lasers.

Journal Article↗