Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces.
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Biomedical subjects
CM Aldao
Publications and source records attributed to CM Aldao.
Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions.
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Metal/GaP(110) interface formation: Ti, Pd, Ag, and Au adatom deposition.
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Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K.
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Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces.
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Cr, Co, Pd, Au, and In overlayers on PbS(100): Adatom interactions and interface formation.
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Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation.
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Disruption, segregation, and passivation for Pd and noble-metal overlayers on YBa2Cu3O6.9.
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3d transition metals on InP(110): A comparative study of reactive interface evolution.
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Synchrotron-radiation photoemission studies of interface formation between metals and superconductors: Al and In on YBa2Cu
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Direct evidence of the onset of In surface segregation for Co/InP(110).
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