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Biomedical subjects

C K Sun

Publications and source records attributed to C K Sun.

23 records · Page 2Linked to original sources
PubMed1989

Molecular and epidemiologic study of multiresistant Escherichia coli infections in Kaohsiung area.

Totally 70 Escherichia coli (E. coli) isolated strains from patients in Chang Gung Memorial Hospital, Kaohsiung Medical College affiliated Chung Ho Memorial Hospital and the Navy General Hospital of the Republic of China, all in Kaohsiung, were collected during the period of July 1986-August 1987 and examined for their susceptibility to several antimicrobial agents as well as for their plasmid contents. The isolates tested showed a high level of resistance to ampicillin (Ap) (90.4%), piperacillin (Pip) (89.0%), tetracycline (Tc) (88.7%), streptomycin (Sm) (87.7%), chloramphenicol (Cm) (78.4%), kanamycin (Km) (72.6%) and sulfamethoxazole/trimethoprim (Sxt) (54.2%). Observations of the resistance patterns revealed that the dominant type was Ap-Tc-Cm-Sm-Pip-Km. The results of plasmid curing and transfer experiments indicated that three plasmids with molecular weights 49.2-51.6 Mdal, 69.8-178 Mdal and a third one with molecular weight larger than 178 Mdal carried resistance determinants for Gm-Nn, Sm-Km-Tc and Tc-Cm-Km, respectively.

China↗
PubMedDate not supplied

Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy.

Taking advantage of the electric field-enhanced second-harmonic generation effect in bulk gallium nitride (GaN) and indium gallium nitride (InGaN) quantum wells, we demonstrated the piezoelectric field distribution mapping in bulk GaN and InGaN multiple-quantum-well (MQW) samples using scanning second-harmonic generation (SHG) microscopy. Scanning SHG microscopy and the accompanying third-harmonic generation (THG) microscopy of the bulk GaN sample were demonstrated using a femtosecond Cr:forsterite laser at a wavelength of 1230 nm. Taking advantage of the off-resonant electric field-enhanced SHG effect and the bandtail state-resonance THG effect, the second- and third-harmonic generation microscopic images obtained revealed the piezoelectric field and bandtail state distributions in a GaN sample. Combined with 720 nm wavelength excited two-photon fluorescence microscopy in the same sample, the increased defect density around the defect area was found to suppress bandedge photoluminescence, to increase yellow luminescence, to increase bandtail state density, and to decrease residue piezoelectric field intensity. Scanning SHG microscopy of the InGaN MQW sample was resonant excited with 800 nm femtosecond pulses from a Ti:sapphire laser in order to suppress SHG contribution from the bulk GaN substrate. Taking advantage of the strong piezoelectric field inside the InGaN quantum well, the wavelength resonant effect, and the electric field-enhanced SHG effect of InGaN quantum wells, resonant scanning SHG microscopy revealed the piezoelectric field distribution inside the wells. Combined with accompanying three-photon fluorescence microscopy from the bulk GaN substrate underneath the quantum wells, the direct correspondence between the piezoelectric field strength inside the quantum well and the substrate quality can be obtained. According to our study, the GaN substrate area with bright bandedge luminescence corresponds to the area with strong SHG signals indicating a higher stained-induced piezoelectric field. These scanning harmonic generation microscopies exhibit superior images of the piezoelectric field and defect state distributions in GaN and InGaN MQWs not available before. Combining with scanning multiphoton fluorescence microscopy, these techniques open new ways for the physical property study of this important material system and can provide interesting details that are not readily available by other microscopic techniques.

Journal Article↗
PubMedDate not supplied

Multiphoton confocal microscopy using a femtosecond Cr:forsterite laser.

With its output wavelength covering the infrared penetrating window of most biological tissues at 1,200-1,250 nm, the femtosecond Cr:forsterite laser shows high potential to serve as an excellent excitation source for the multiphoton fluorescence microscope. Its high output power, short optical pulse width, high stability, and low dispersion in fibers make it a perfect replacement for the currently widely used Ti:sapphire laser. In this paper, we study the capability of using a femtosecond Cr:forsterite laser in multiphoton scanning microscopy. We have performed the multiphoton excited photoluminescence spectrum measurement on several commonly used bioprobes using the 1,230 nm femtosecond pulses from a Cr:forsterite laser. Efficient fluorescence can be easily observed in these bioprobes through two-photon or three-photon excitation processes. These results will assist in the selection of dichroic beam splitter and band pass filters in a multiphoton microscopic system. We have also performed the autofluorescence spectrum measurement from chlorophylls in live leaves of the plant Arabidopsis thaliana excited by 1,230 nm femtosecond pulses from the Cr:forsterite laser. Bright luminescence from chlorophyll, centered at 673 and 728 nm, respectively, can be easily observed. Taking advantage of the bright two-photon photoluminescence from chlorophyll, we demonstrated the two-photon scanning paradermal and cross-sectional images of palisade mesophyll cells in live leaves of Arabidopsis thaliana.

Arabidopsis↗