Time-resolved zero-field optically detected magnetic-resonance study of the (Cu-Li)V neutral defect complex in GaP.
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Biomedical subjects
B Monemar
Publications and source records attributed to B Monemar.
Microscopic identification and electronic structure of a di-hydrogen-vacancy complex in silicon by optical detection of magnetic resonance.
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Nonequilibrium carrier processes in the presence of microwaves and magnetic fields in epitaxial GaAs studied by photoluminescence spectroscopy.
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Steady-state level-anticrossing spectra for bound-exciton triplets associated with complex defects in semiconductors.
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Defect annealing in electron-irradiated boron-doped silicon.
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Transient characteristics of excitons bound at hole-attractive isoelectronic centers in GaP.
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Optically detected magnetic resonance of a thermally induced deep center in electron-irradiated silicon.
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Gai self-interstitial-related defect in GaP studied by optically detected magnetic resonance.
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Optical studies of metastable properties of a defect with a zero-phonon transition at 0.615 eV in 2-MeV electron-irradiated Czochralski-grown silicon.
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Reply to "Comment on 'Optically detected magnetic resonance in oxygen-doped GaP' "
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Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAs.
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Optical characterization of a deep (Cu-C)-related complex defect in GaP.
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Optical detection of microwave-induced impact ionization of bound excitons in silicon.
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Effects of interlevel coupling on optically detected magnetic resonance spectra for complex defects in semiconductors.
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Alternating donorlike-acceptorlike configurationally bistable defect in irradiated phosphorus-doped silicon.
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Electronic structure of the 2.087-eV bound exciton related to the Lii-LiGa-OP complex defect in GaP.
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Impact ionization of free excitons and electron-hole droplets in silicon in weak electric and magnetic fields.
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Optical properties of a neutral Cu-C complex defect in GaP.
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