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B Andrei Bernevig

Publications and source records attributed to B Andrei Bernevig.

6 recordsLinked to original sources

Quantum spin Hall effect and topological phase transition in HgTe quantum wells.

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an "inverted" type at a critical thickness d(c). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.

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Helical liquid and the edge of quantum spin Hall systems.

The edge states of the recently proposed quantum spin Hall systems constitute a new symmetry class of one-dimensional liquids dubbed the "helical liquid," where the spin orientation is determined by the direction of electron motion. We prove a no-go theorem which states that a helical liquid with an odd number of components cannot be constructed in a purely 1D lattice system. In a helical liquid with an odd number of components, a uniform gap in the ground state can appear when the time-reversal symmetry is spontaneously broken by interactions. On the other hand, a correlated two-particle backscattering term by an impurity can become relevant while keeping the time-reversal invariance.

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Quantum spin Hall effect.

The quantum Hall liquid is a novel state of matter with profound emergent properties such as fractional charge and statistics. The existence of the quantum Hall effect requires breaking of the time reversal symmetry caused by an external magnetic field. In this work, we predict a quantized spin Hall effect in the absence of any magnetic field, where the intrinsic spin Hall conductance is quantized in units of 2(e/4pi). The degenerate quantum Landau levels are created by the spin-orbit coupling in conventional semiconductors in the presence of a strain gradient. This new state of matter has many profound correlated properties described by a topological field theory.

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Maxwell equation for coupled spin-charge wave propagation.

We show that the dissipationless spin current in the ground state of the Rashba model gives rise to a reactive coupling between the spin and charge propagation, which is formally identical to the coupling between the electric and the magnetic fields in the (2 + 1)-dimensional Maxwell equation. This analogy leads to a remarkable effect of fractionalization of spin packets (FSP) where a density packet can spontaneously split into two counterpropagation packets, each carrying the opposite spin. In a certain parameter regime, the coupled spin and charge wave propagates like a transverse "photon." We propose both optical and purely electronic experiments to detect the FSP effect.

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Orbitronics: the intrinsic orbital current in p-doped silicon.

The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that an electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction from impurity scattering vanishes and the effect is robust against disorder. The orbital Hall effect leads to accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.

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Intrinsic spin Hall effect in the two-dimensional hole gas.

We show that two types of spin-orbit coupling in the 2 dimensional hole gas, with and without inversion symmetry breaking, contribute to the intrinsic spin-Hall effect. Furthermore, the vertex correction due to impurity scattering vanishes in both cases, in sharp contrast to the case of usual Rashba coupling in the electron band. Recently, the spin-Hall effect in a hole doped GaAs semiconductor has been observed experimentally by Wunderlich et al. [ Phys. Rev. Lett. 94, 047204 (2005).]. From the fact that the lifetime broadening is smaller than the spin splitting, and the fact impurity vertex corrections vanish in this system, we argue that the observed spin-Hall effect should be in the intrinsic regime.

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