Epitaxial Growth of SiO2 Produced in Silicon by Oxygen Ion Implantation.
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Biomedical subjects
A Stesmans
Publications and source records attributed to A Stesmans.
Electron states and microstructure of thin a-C:H layers.
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Thermally induced interface degradation in (111) Si/SiO2 traced by electron spin resonance.
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[sdot ]Si=Si3 defect at thermally grown]
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Electron-spin-resonance analysis of the natural intrinsic EX center in thermal SiO2 on Si.
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Natural intrinsic EX center in thermal SiO2 on Si: 17O hyperfine interaction.
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Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship.
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Comment on "Spin resonance of inversion-layer electrons in silicon"
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Relationship between stress and dangling bond generation at the (111)Si/SiO2 interface.
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New intrinsic defect in as-grown thermal SiO2 on (111)Si.
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Dipolar interaction between
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O environment of unpaired Si bonds (Pb defects) at the (111)Si/SiO2 interface.
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Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface.
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Observation of the localized Si dangling-bond Pb defect at the Si/Si3N4 interface.
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Direct evidence for ambient-controlled hopping conduction in inhomogeneous a-Si and a-Si:H from gas-diffusion experiments.
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Nature of paramagnetic centers in a-Si and a-Si:H.
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Influence of microstructure on the T-1/4 conductivity law of slowly deposited sputtered a-Si and a-Si:H.
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Evidence of g=2.013 defect centers in a-Si:H.
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