Multilayers as microlabs for point defects: Effect of strain on diffusion in semiconductors.
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Biomedical subjects
A Ourmazd
Publications and source records attributed to A Ourmazd.
Mapping projected potential, interfacial roughness, and composition in general crystalline solids by quantitative transmission electron microscopy.
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Measuring properties of point defects by electron microscopy: The Ga vacancy in GaAs.
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Morphology of GaAs-quantum-well interfaces grown by liquid-phase epitaxy.
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Interaction of energetic ions with inhomogeneous solids.
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Ourmazd and Cunningham reply.
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Nonlinear diffusion in multilayered semiconductor systems.
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Chemical mapping of semiconductor interfaces at near atomic resolution.
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Electronic structure of Ge/Si monolayer strained-layer superlattices.
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Structural characterization of Ba2YCu3O7 by high resolution transmission electron microscopy.
We show that high-resolution transmission electron microscopy can be used directly to reveal the structure of the metal framework and its defects in Ba2YCu3O7. The use of dynamical effects under carefully selected and controlled conditions allows the detection of long-range order in the disposition of the oxygen vacancies, but inevitable misalignments make the quantification of the order parameter difficult. Specimen preparation methods are compared, and a wide-angle convergent-beam pattern is demonstrated.
Barium↗
Magnetic microstructure and flux dynamics of high-Tc superconductors.
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Structurally induced optical transitions in Ge-Si superlattices.
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Ourmazd, Bean, and Phillips respond.
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Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy.
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Observation of (5 x 5) surface reconstruction on pure silicon and its stability against native-oxide formation.
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Submicrocrystallites and the orientational proximity effect.
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Observation of order-disorder transitions in strained-semiconductor systems.
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